Raghu V Gupta

US Patent:

20190237571, Aug 1, 2019

Filed:

Apr 8, 2019

Appl. No.:

16/377571

Inventors:

- Austin TX, US
Vishnu K. Khemka - Chandler AZ, US
Raghu Gupta - Austin TX, US
Moaniss Zitouni - Gilbert AZ, US
Ganming Qin - Chandler AZ, US

International Classification:

H01L 29/78
H01L 29/08
H01L 29/66

Abstract:

A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated control gate is located over the semiconductor body between the source and drain and configured to control a conductive channel extending between the source and drain. First and second doped regions such as highly-doped regions are adjacent to the source. The first or second doped region may be a cathode short region electrically coupled to the source. The cathode short region may be used in a bidirectional power MOSFET.

US Patent:

20190103484, Apr 4, 2019

Filed:

Sep 29, 2017

Appl. No.:

15/720097

Inventors:

- Austin TX, US
Vishnu K. Khemka - Chandler AZ, US
Raghu Gupta - Austin TX, US
Moaniss Zitouni - Gilbert AZ, US
Ganming Qin - Chandler AZ, US

International Classification:

H01L 29/78
H01L 29/66

Abstract:

A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated control gate is located over the semiconductor body between the source and drain and configured to control a conductive channel extending between the source and drain. First and second doped regions such as highly-doped regions are adjacent to the source. The first or second doped region may be a cathode short region electrically coupled to the source. The cathode short region may be used in a bidirectional power MOSFET.