Rahul Gupta

US Patent:

7355718, Apr 8, 2008

Filed:

Apr 4, 2006

Appl. No.:

11/278559

Inventors:

William Jacob Craft - Whitsett NC, US
Rahul Gupta - Wilmington DE, US

Assignee:

North Carolina Agricultural and Technical State University - Greensboro NC

International Classification:

G01B 9/02
G01L 1/24

US Classification:

356480, 356 355, 356519

Abstract:

An interferometer pressure sensor includes a reflective film configured to change a position thereof responsive to a pressure change and an interferometer element configured to detect the position change of the reflective film. A holder is configured to hold the reflective film and the interferometer element. The holder includes a first member formed of a first material having a first coefficient of thermal expansion and a second member formed of a second material having a second coefficient of thermal expansion that is different from the first coefficient of thermal expansion. The first member and the second member of the holder are sized and configured based on the first coefficient of thermal expansion and the second coefficient of thermal expansion so that a distance between the reflective film and the interferometer element is substantially constant over a temperature range.

US Patent:

7868426, Jan 11, 2011

Filed:

Jul 28, 2008

Appl. No.:

12/180848

Inventors:

Brian G. Willis - Wilmington DE, US
Rahul Gupta - Newark DE, US

Assignee:

University of Delaware - Newark DE

International Classification:

H01L 29/06
H01L 29/76
H01L 29/94
H01L 31/062
H01L 31/113
H01L 31/119

US Classification:

257618, 257343, 257377, 257382, 257E2907, 977707, 977762

Abstract:

A monolithic pair of nanoscale probes, including: a substrate having a cavity that extends from a surface of the substrate into its body; a dielectric layer formed on the substrate; a pair of nanoscale probe precursors formed over the dielectric layer; a plurality of sub-monolayers of electrode material selectively atomic layer deposited over the pair of nanoscale probe precursors. The dielectric layer includes a window that extends through it to the cavity of the substrate such that a portion of the dielectric layer adjacent to the window extends over the cavity. The pair of nanoscale probe precursors includes a pair of edges facing each other across the window. These edges correspond to tips of the pair of nanoscale probes. The sub-monolayers of electrode material include the pair of edges, so that a distance between the tips of the nanoscale probes is between about 0. 1 nm and about 20 nm.

US Patent:

20110283873, Nov 24, 2011

Filed:

Jul 31, 2008

Appl. No.:

12/673418

Inventors:

Haydn N.G. Wadley - Keswick VA, US
Yellapu V. Murty - Charlottesville VA, US
Tyrone Jones - Bel Air MD, US
Rahul Gupta - Wilmington DE, US
Matthew Burkins - Forest Hill MD, US

Assignee:

UNIVERSITY OF VIRGINIA PATENT FOUNDATION - Charlottesville VA
DEPARTMENT OF THE ARMY - Adelphi MD
CELLULAR MATERIALS INTERNATIONAL, INC. - Charlottesville VA

International Classification:

F41H 5/04
B63B 3/10
B64G 1/52
B64D 45/00
B61D 17/00
F41H 7/02
F41H 5/24

US Classification:

89 3602, 89904, 89914, 89915, 89910, 89917, 89930, 89920

Abstract:

Structures based upon periodic cellular materials that provide a potential for defeating combinations of both air blast loading and ballistic attack either sequentially or simultaneously, or combination of both. The cellular structures may also be configured to meet the stiffness and strength support requirements of particular vehicle or other applications, systems or structures. The armor is therefore potentially able to support normal service loads and defeat blast and ballistic threats when necessary. The structure provides for using efficient load support capabilities of the material (without a high armor protection level) in low threat conditions, as well as the ability to modify the system to increase its level protection to a desired or required level. This would reduce the weight of the protection system in normal (low threat) conditions which reduces vehicle wear and tear, as well as cost savings in fabrication of applicable structures or systems.

US Patent:

20120227762, Sep 13, 2012

Filed:

Oct 14, 2010

Appl. No.:

13/502057

Inventors:

Christian Dussarrat - Wilmington DE, US
Rahul Gupta - Newark DE, US
Vincent M. Omarjee - Grenoble, FR
Nathan Stafford - Damascus OR, US

Assignee:

American Air Liquide, Inc. - Fremont CA

International Classification:

B08B 7/00

US Classification:

134 11

Abstract:

Disclosed are compounds for plasma ashing photoresist layers on a substrate and methods of using the same. The plasma ashing compounds induce limited to no damage to the underlying layer, such as the low-k film layer.

US Patent:

20150371869, Dec 24, 2015

Filed:

Aug 31, 2015

Appl. No.:

14/841271

Inventors:

- Fremont CA, US
Rahul Gupta - Newark DE, US
Venkateswara R. Pallem - Hockessin, DE

International Classification:

H01L 21/311
C07C 251/08
C07C 255/10

Abstract:

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C═N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.