Ricardo Ruiz

US Patent:

7709079, May 4, 2010

Filed:

Jan 4, 2008

Appl. No.:

11/969496

Inventors:

Charles T. Black - New York NY, US
Ricardo Ruiz - Yorktown Heights NY, US
Robert L. Sandstrom - Chestnut Ridge NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 3/00
B32B 3/28
B32B 3/30
H01L 23/58

US Classification:

428173, 428167, 257506, 257510, 257513, 257632, 257642, 257643

Abstract:

A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described.

US Patent:

7820270, Oct 26, 2010

Filed:

Aug 13, 2009

Appl. No.:

12/540440

Inventors:

Charles T. Black - New York NY, US
Ricardo Ruiz - Yorktown Heights NY, US
Robert L. Sandstrom - Chestnut Ridge NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C08L 53/00
C08L 31/00
C08L 33/04
C08L 9/00
C08L 47/00
B32B 3/00
B32B 3/02

US Classification:

428156, 428157, 525 88, 525 94, 525 98

Abstract:

A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described.

US Patent:

7977247, Jul 12, 2011

Filed:

Oct 16, 2007

Appl. No.:

11/873316

Inventors:

Charles T. Black - New York NY, US
Ricardo Ruiz - Yorktown Heights NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/302
H01L 21/461
G03F 1/00
G03F 7/00

US Classification:

438716, 438945, 438947, 438948, 438949, 438736, 430323

Abstract:

The present invention relates to a semiconductor structure such as a field effect transistors (FETs) in which the channel region of each of the FETs is composed of an array of more than one electrically isolated channel. In accordance with the present invention, the distance between each of the channels present in the channel region is within a distance of no more than twice their width from each other. The FETs of the present invention are fabricated using methods in which self-assembled block copolymers are employed in forming the channel.

US Patent:

20060249784, Nov 9, 2006

Filed:

May 6, 2005

Appl. No.:

11/124325

Inventors:

Charles Black - New York NY, US
Ricardo Ruiz - Yorktown Heights NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY

International Classification:

H01L 29/76

US Classification:

257327000

Abstract:

The present invention relates to a semiconductor structure such as a field effect transistors (FETs) in which the channel region of each of the FETs is composed of an array of more than one electrically isolated channel. In accordance with the present invention, the distance between each of the channels present in the channel region is within a distance of no more than twice their width from each other. The FETs of the present invention are fabricated using methods in which self-assembled block copolymers are employed in forming the channel.