Richard J Conti

age ~68

from Suffern, NY

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Also known as:

Richard Joseph Conti
Richard Coc Conti
Richard J Felitto

Phone and address:: 2 Charnwood Dr, Airmont, NY 10901
8453683822

Connected to:

Richard Conti Phones & Addresses

2 Charnwood Dr, Suffern, NY 10901 • 8453683822
Airmont, NY
1105 Lehto Ln APT 3, Lake Worth, FL 33461
Tallman, NY
2444 Morgan Ave, Bronx, NY 10469 • 7186533250
Los Angeles, CA

Work

Company:

Richard Conti
Address:

505 N. Lake Shore Drive #2213, Chicago, IL 11357
Phones:

3126446048

Interests

Real Estate • Design and Re Modeling • Real Estate Investment Partners • In today's economy I do not have to tell...

Images

Specialities

Buyer's Agent • Listing Agent

Resumes

Richard Conti

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Richard Conti

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Richard Conti

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Skills:

Management
Customer Service

Richard Conti

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Richard Conti

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Richard Conti

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Senior Process Development And Manufacturing Engineer At Ibm

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Position:

Senior Process Development and Manufacturing Engineer at IBM

Location:

Greater New York City Area

Industry:

Information Technology and Services

Work:

IBM
Senior Process Development and Manufacturing Engineer

Education:

Polytechnic University 1979 - 1983
BS, Chemical Engineering

Richard Conti

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Location:

United States

Real Estate Brokers

Richard Conti, Chicago IL

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Specialties:

Buyer's Agent
Listing Agent

Work:

Richard Conti
505 N. Lake Shore Drive #2213, Chicago, IL 11357
3126446048 (Office)

Richard Conti, Boca Raton FL Landlord

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Work:

Boca Raton, FL
5613945850 (Phone)

Interests:

Real Estate
Design and Re Modeling
Real Estate Investment Partners
In today's economy I do not have to tell you how hard it is in Real Estate but there still are good opportunities to make money. Surely not as much as people were making a few years ago but far more then banks are paying in interest. So if you buy in the right developements with high sales rates and put that money that is sitting on the side lines in a bank you can make some handsome profits and returns on that money far better than you could in the market and for sure much much better then in a bank !! The trick is to find an honest partner who haoppens to be a General Contractor as well. I can use the extra funds and you have use of my exoertise and building material connections not to mention laborerers and trades people. We all share a piece of the pie which is backed by real estate and has the potential to earn equity as well as profits. A win win situation in todays world for sure. There is POWER in numbers and PROFITS too !!

About:

I am originally from New York City. I was born, raised and educated there. I am of Italian Decent and come from a good Italian Family. Raised by decent and honest Italian Parents. A Family of business and trades people. I learned at an early age many trades and have been practicing them for many years. Now at 62 years of age I am for the most part a superviser for my guys who are very good at what they do. If you want the right job at the right price I am your man. If you are looking for cheap sabby work then please Do NOT contact me. I am fair and I am honest to a fault .

Medicine Doctors

Richard J. Conti

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Specialties:

Podiatric Medicine

Work:

Foot & Ankle AssociatesFoot & Ankle Associates LLP
1440 Conchester Hwy STE 10C, Garnet Valley, PA 19060
6104593288 (phone), 6104593318 (fax)

Foot & Ankle Associates
685 Unionville Rd STE 2, Kennett Square, PA 19348
6104446520 (phone), 6104442232 (fax)

Foot & Ankle Associates
1 Commerce Blvd STE 102, West Grove, PA 19390
6103450222 (phone), 6103451148 (fax)

Foot & Ankle Associates
4923 Ogletown Stanton Rd STE 120, Newark, DE 19713
3026331300 (phone), 3026334623 (fax)

Procedures:

Arthrocentesis
Hallux Valgus Repair

Conditions:

Plantar Fascitis
Hallux Valgus
Tinea Pedis

Languages:

English
Spanish

Description:

Dr. Conti works in Boothwyn, PA and 3 other locations and specializes in Podiatric Medicine. Dr. Conti is affiliated with Christiana Hospital, Crozer Chester Medical Center, Jennersville Regional Hospital and Penn Medicine Chester County Hospital.

Us Patents

Method For Low Temperature Chemical Vapor Deposition Of Low-K Films Using Selected Cyclosiloxane And Ozone Gases For Semiconductor Applications
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US Patent:

6531412, Mar 11, 2003
Filed:

Aug 10, 2001
Appl. No.:

09/928209
Inventors:

Richard A. Conti - Katonah NY
Daniel C. Edelstein - White Plains NY
Gill Yong Lee - Wappingers Falls NY
Assignee:

International Business Machines Corporation - Armonk NY
Infineon Technologies AG - Munich
International Classification:

H01C 2131
US Classification:

438778, 438695, 438697, 438712, 438723, 438761, 438781, 438618, 438620, 438622, 438626, 438627, 438628, 42725528, 42725539, 427255393, 427569, 427578, 427579
Abstract:

A method is described for forming a low-k dielectric film, in particular, a pre-metal dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics. The method uses a thermal sub-atmospheric CVD process that includes a carbon-containing organometallic precusor such as TMCTS or OMCTS, an ozone-containing gas, and a source of dopants for gettering alkali elements and for lowering the reflow temperature of the dielectric while attaining the desired low-k and gap-filling properties of the dielectric film. Phosphorous is a preferred dopant for gettering alkali elements such as sodium. Additional dopants for lowering the reflow temperature include, but are not limited to boron, germanium, arsenic, fluorine or combinations thereof.

Carbon-Graded Layer For Improved Adhesion Of Low-K Dielectrics To Silicon Substrates
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US Patent:

6570256, May 27, 2003
Filed:

Jul 20, 2001
Appl. No.:

09/910380
Inventors:

Richard A. Conti - Mount Kisco NY
Prakash Chimanlal Dev - Plano TX
David M. Dobuzinsky - New Windsor NY
Daniel C. Edelstein - White Plains NY
Gill Y. Lee - Wappingers Falls NY
Padraic C. Shafer - Beacon NY
Alexander Simpson - Wappingers Falls NY
Peter Wrschka - Wappingers Falls NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 2348
US Classification:

257761, 257760, 257752, 257 72, 257762, 257767, 438624, 438622
Abstract:

A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3. 3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

Carbon-Graded Layer For Improved Adhesion Of Low-K Dielectrics To Silicon Substrates
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US Patent:

6740539, May 25, 2004
Filed:

Feb 13, 2003
Appl. No.:

10/366149
Inventors:

Richard A. Conti - Mount Kisco NY
Prakash Chimanlal Dev - Plano TX
David M. Dobuzinsky - New Windsor NY
Daniel C. Edelstein - White Plains NY
Gill Y. Lee - Wappingers Falls NY
Padraic C. Shafer - Beacon NY
Alexander Simpson - Wappingers Falls NY
Peter Wrschka - Wappingers Falls NY
Assignee:

International Business Machines Corporation - Armonk NY
Infineon Technologies A.G.
International Classification:

H01L 5140
US Classification:

438 99, 438624, 438780
Abstract:

A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3. 3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

Stabilization Of Fluorine-Containing Dielectric Materials In A Metal Insulator Wiring Structure
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US Patent:

6911378, Jun 28, 2005
Filed:

Jun 24, 2003
Appl. No.:

10/604060
Inventors:

Richard A. Conti - Katonah NY, US
Kenneth Davis - Newburgh NY, US
John A. Fitzsimmons - Poughkeepsie NY, US
David L. Rath - Stormville NY, US
Daewon Yang - Fishkill NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L021/322
US Classification:

438475, 438622, 438761, 438783, 438473, 438474, 438795, 438800, 257645, 257651, 257958
Abstract:

A process for providing regions of substantially lower fluorine content in a fluorine-containing dielectric comprises exposing the fluorine-containing dielectric to a reactive species to form volatile byproducts.

Method For Low Temperature Chemical Vapor Deposition Of Low-K Films Using Selected Cyclosiloxane And Ozone Gases For Semiconductor Applications
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US Patent:

7084079, Aug 1, 2006
Filed:

Nov 18, 2002
Appl. No.:

10/299357
Inventors:

Richard A. Conti - Katonah NY, US
Daniel C. Edelstein - White Plains NY, US
Gill Yong Lee - Wappingers Falls NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 21/469
US Classification:

438786, 438787, 438778, 438758
Abstract:

A method is described for forming a low-k dielectric film, in particular, a pre-metal dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics. The method uses a thermal sub-atmospheric CVD process that includes a carbon-containing organometallic precusor such as TMCTS or OMCTS, an ozone-containing gas, and a source of dopants for gettering alkali elements and for lowering the reflow temperature of the dielectric while attaining the desired low-k and gap-filling properties of the dielectric film. Phosphorous is a preferred dopant for gettering alkali elements such as sodium. Additional dopants for lowering the reflow temperature include, but are not limited to boron, germanium, arsenic, fluorine or combinations thereof.

Bilayer Cap Structure Including Hdp/Bhdp Films For Conductive Metallization And Method Of Making Same
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US Patent:

7179760, Feb 20, 2007
Filed:

May 27, 2005
Appl. No.:

10/908833
Inventors:

Richard A. Conti - Katonah NY, US
Thomas F. Houghton - Marlboro NY, US
Michael F. Lofaro - Hopewell Junction NY, US
Jeffery B. Maxson - New Windsor NY, US
Ann H. McDonald - New Windsor NY, US
Yun-Yu Wang - Poughquag NY, US
Keith Kwong Hon Wong - Wappingers Falls NY, US
Daewon Yang - Hopewell Junction NY, US
Assignee:

International Buisness Machines Corporation - Armonk NY
International Classification:

H01L 21/31
H01L 21/469
US Classification:

438788, 438792
Abstract:

The present invention relates to a bilayer cap structure for interconnect structures that comprise copper metallization or other conductive metallization. Such bilayer cap structure includes a first cap layer formed by an unbiased high density plasma (HDP) chemical vapor deposition process, and a second cap layer over the first cap layer, where the second cap layer is formed by a biased high density plasma (bHDP) chemical vapor deposition process. During the bHDP chemical vapor deposition process, a low AC bias power is applied to the substrate to increase the ion bombardment on the substrate surface and to induce resputtering of the capping material, thereby forming a seamless second cap layer with excellent reactive ion etching (RIE) selectivity.

Method Of Forming Nitride Films With High Compressive Stress For Improved Pfet Device Performance
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US Patent:

7462527, Dec 9, 2008
Filed:

Jul 6, 2005
Appl. No.:

11/160705
Inventors:

Richard A. Conti - Katonah NY, US
Ronald P. Bourque - Wappingers Falls NY, US
Nancy R. Klymko - Hopewell Junction NY, US
Anita Madan - Danbury CT, US
Michael C. Smits - Poughkeepsie NY, US
Roy H. Tilghman - Stormville NY, US
Kwong Hon Wong - Wappingers Falls NY, US
Daewon Yang - Hopewell Junction NY, US
Assignee:

International Business Machines Corporation - Armonk NY
Novellus Systems, Inc. - San Jose CA
International Classification:

H01L 21/8238
US Classification:

438199, 438792
Abstract:

A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2. 8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13. 56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 Å.

Process Of Making A Semiconductor Device Using Multiple Antireflective Materials
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US Patent:

7485573, Feb 3, 2009
Filed:

Feb 17, 2006
Appl. No.:

11/356027
Inventors:

Marie Angelopoulos - Cortlandt Manor NY, US
Katherina E. Babich - Chappaqua NY, US
Sean D. Burns - Hopewell Junction NY, US
Richard A. Conti - Katonah NY, US
Allen H. Gabor - Katonah NY, US
Scott D. Halle - Hopewell Junction NY, US
Arpan P. Mahorowala - Bronxville NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 21/4763
US Classification:

438636, 438 72, 257E21029, 430311
Abstract:

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

Name / Title

Company / Classification

Phones & Addresses

Richard L. Conti
Principal

Richs Hobby Depot
Ret Hobbies/Toys/Games

68 Chaffee Ave, Albertson, NY 11507

Richard Conti
Principal

South Shores Bar & Grill
Eating Place

502 Lucerne Ave, Lake Worth, FL 33460
5615477656

Richard N Conti
Manager

RACER POWERBOATS LLC
Ret Boats

2811 NE 7 St, Pompano Beach, FL 33062
2811 NE 7, Pompano Beach, FL 33062
9542347223

Richard Conti

SYDNEY CANDLE COMPANY, LLC

Richard A Conti

WESTERSUN, LLC

Richard Conti
Director

Durham "F" Condominium Association. Inc

246 Durham F, Pompano Beach, FL 33442
2400 Centrepark W Dr, West Palm Beach, FL 33409
3501 E West Dr, Pompano Beach, FL 33442
306 Durham I, Pompano Beach, FL 33442

Richard Conti
CEO

E K SUCCESS LTD, INC

2240 W 75 St, Woodridge, IL 60517
261 Riv Rd, Clifton, NJ 07014
124 W Capitol Ave STE 1900, Little Rock, AR 72201
300 Spg BUILDING , SUITE 900 300 S SPRING STREET, Little Rock, AR 72201

Richard N. Conti
President

Team Jaguar, Inc

1500 NW 62 St, Fort Lauderdale, FL 33309

Wikipedia References

Richard Conti

Work:

Position:

Judge

Education:

Studied at:

North Sydney Boys High School

Classmates

Richard Conti

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Schools:

Dunkirk High School Dunkirk NY 1962-1966

Community:

Ron Spear

Richard Conti

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Schools:

Lincoln Junior High School Brooklyn NY 1972-1976

Community:

Brian Chichi, Lynda Maggiore

Richard Conti

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Schools:

Lincoln Elementary School Brookfield IL 1986-1991

Community:

Susan Marion, Maryann Kral, Jennifer Marine, Merlissa Ramos, Barbara Davis

Richard Conti

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Schools:

Brown Middle School Bergenfield NJ 1962-1963

Community:

Gary Peraino, Karen Hotchkiss, Philip Osoff, Joe May

Richard Conti

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Schools:

Our Lady of Mt. Carmel St. Benedicta School Staten Island NY 1961-1969

Community:

Bob Fannin, Patrick Groves, Kelli Stannard

Richard Conti

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Schools:

Canajoharie Central High School Canajoharie NY 1965-1969

Community:

Barbara Fonda

Richard Conti

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Schools:

St. Joachim Elementary School Trenton NJ 1961-1967, Nottingham Junior High School Hamilton NJ 1968-1970

Community:

Susann Minall, Cheryl Ferrara, Michelle Ferrara, James Csira, Carmel Valvo, Ronald Warren, David Lichen

Richard Conti

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Schools:

Warren High School Warren RI 1987-1991

Community:

Mary Jones, Diane Borges, Jimmy Bermudez, Jennifer Blouin, J Brown, Kevin M, Jennifer Souza, Christine Pullen, Michael Escobar, Adilia Dasilva, Crystal Fortier