Richard A Conti

US Patent:

6335261, Jan 1, 2002

Filed:

May 31, 2000

Appl. No.:

09/584355

Inventors:

Wesley Natzle - New Paltz NY
Richard A. Conti - Mount Kisco NY
Laertis Economikos - Wappingers Falls NY
Thomas Ivers - Hopewell Jct. NY
George D. Papasouliotis - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438435, 438221, 438424, 438685, 438694, 438696, 438758, 438762, 438765, 438775, 438788

Abstract:

A method is described for filling a high-aspect-ratio feature, in which compatible deposition and etching steps are performed in a sequence. The feature is formed as an opening in a substrate having a surface; a fill material is deposited at the bottom of the feature and on the surface of the substrate; deposition on the surface adjacent the feature causes formation of an overhang structure partially blocking the opening. The fill material is then reacted with a reactant to form a solid reaction product having a greater specific volume than the fill material. The overhang structure is thus converted into a reaction product structure blocking the opening. The reaction product (including the reaction product structure) is then desorbed, thereby exposing unreacted fill material at the bottom of the feature. The depositing and reacting steps may be repeated, with a final depositing step to fill the feature. Each sequence of depositing, reacting and desorbing reduces the aspect ratio of the feature.

US Patent:

6500772, Dec 31, 2002

Filed:

Jan 8, 2001

Appl. No.:

09/757072

Inventors:

Ashima B. Chakravarti - Hopewell Junction NY
Richard A. Conti - Mount Kisco NY
Chester Dziobkowski - Hopewell Junction NY
Thomas Ivers - Hopewell Junction NY
Paul Jamison - Hopewell Junction NY
Frank Liucci - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2131

US Classification:

438789, 438790, 438793, 438794

Abstract:

A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (RâNH) SiX , wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.

US Patent:

6667504, Dec 23, 2003

Filed:

Mar 24, 2003

Appl. No.:

10/249228

Inventors:

Jochen Beintner - Wappingers Falls NY
Wolfgang Bergner - Stormville NY
Richard A. Conti - Katonah NY
Andreas Knorr - Austin TX
Rolf Weis - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY
Infineon Technologies North America Corporation - San Jose CA

International Classification:

H01L 27108

US Classification:

257302, 257301

Abstract:

The invention provides a trench storage structure that includes a substrate having a trench, a capacitor conductor in the lower part of the trench, a conductive node strap in the trench adjacent the capacitor conductor, a trench top oxide above the capacitor conductor, and a conductive buried strap in the substrate adjacent the trench top oxide. The trench top oxide includes a doped trench top oxide layer above the conductive strap, and an undoped trench top oxide layer above the doped trench top oxide layer.

US Patent:

7326651, Feb 5, 2008

Filed:

Dec 14, 2004

Appl. No.:

10/905068

Inventors:

Heidi Baks - Poughkeepsie NY, US
Richard A. Bruff - Wappingers Falls NY, US
Richard A. Conti - Katonah NY, US
Allan Upham - Wappingers Falls NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/302

US Classification:

438706, 438704, 438717, 438725, 438736, 438694, 438696

Abstract:

This invention relates to the manufacture of dual damascene interconnect structures in integrated circuit devices. Specifically, a method is disclosed for forming a single or dual damascene structure in a low-k dielectric thin film utilizing a planarizing material and a compressive diffusion barrier material. The barrier material preferably has a compressive stress of greater than 300 MPa. In a preferred dual damascene embodiment of this method, the vias are formed first in the dielectric material, then the planarizing material is deposited in the vias and on the dielectric material, and the barrier material is deposited on the planarizing material. The trenches are then formed lithographically in the imaging material, etched through the barrier material into the planarizing material, and the trench pattern is transferred to the dielectric material. During and following the course of these etch steps, the imaging, barrier and planarizing materials are removed. The resultant dual damascene structure may then be metallized.

US Patent:

7485573, Feb 3, 2009

Filed:

Feb 17, 2006

Appl. No.:

11/356027

Inventors:

Marie Angelopoulos - Cortlandt Manor NY, US
Katherina E. Babich - Chappaqua NY, US
Sean D. Burns - Hopewell Junction NY, US
Richard A. Conti - Katonah NY, US
Allen H. Gabor - Katonah NY, US
Scott D. Halle - Hopewell Junction NY, US
Arpan P. Mahorowala - Bronxville NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/4763

US Classification:

438636, 438 72, 257E21029, 430311

Abstract:

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

US Patent:

7955926, Jun 7, 2011

Filed:

Mar 26, 2008

Appl. No.:

12/055682

Inventors:

Wesley C. Natzle - New Paltz NY, US
Renee T. Mo - Briarcliff Manor NY, US
Rashmi Jha - Wappingers Falls NY, US
Kathryn T. Schonenberg - Wappingers Falls NY, US
Richard A. Conti - Katonah NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438240, 438197, 257310, 257544

Abstract:

In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.

US Patent:

7968270, Jun 28, 2011

Filed:

Aug 25, 2008

Appl. No.:

12/197571

Inventors:

Marie Angelopoulos - Cortlandt Manor NY, US
Katherina E. Babich - Chappaqua NY, US
Sean D. Burns - Hopewell Junction NY, US
Richard A. Conti - Katonah NY, US
Allen H. Gabor - Katonah NY, US
Scott D. Halle - Hopewell Junction NY, US
Arpan P. Mahorowala - Bronxville NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/11
G03F 7/40

US Classification:

4302721, 4302761, 430316, 430323, 430313, 438952

Abstract:

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

US Patent:

20040188740, Sep 30, 2004

Filed:

Oct 17, 2003

Appl. No.:

10/688612

Inventors:

Jochen Beintner - Wappingers Falls NY, US
Wolfgang Bergner - Stormville NY, US
Richard Conti - Katonah NY, US
Andreas Knorr - Austin TX, US
Rolf Weis - Wappingers Falls NY, US

International Classification:

H01L021/8234
H01L021/8244
H01L021/8242

US Classification:

257/302000, 438/246000

Abstract:

The invention provides a trench storage structure that includes a substrate having a trench, a capacitor conductor in the lower part of the trench, a conductive node strap in the trench adjacent the capacitor conductor, a trench top oxide above the capacitor conductor, and a conductive buried strap in the substrate adjacent the trench top oxide. The trench top oxide includes a doped trench top oxide layer above the conductive strap, and an undoped trench top oxide layer above the doped trench top oxide layer