Richard W Conti

US Patent:

6570256, May 27, 2003

Filed:

Jul 20, 2001

Appl. No.:

09/910380

Inventors:

Richard A. Conti - Mount Kisco NY
Prakash Chimanlal Dev - Plano TX
David M. Dobuzinsky - New Windsor NY
Daniel C. Edelstein - White Plains NY
Gill Y. Lee - Wappingers Falls NY
Padraic C. Shafer - Beacon NY
Alexander Simpson - Wappingers Falls NY
Peter Wrschka - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2348

US Classification:

257761, 257760, 257752, 257 72, 257762, 257767, 438624, 438622

Abstract:

A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3. 3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

US Patent:

6740539, May 25, 2004

Filed:

Feb 13, 2003

Appl. No.:

10/366149

Inventors:

Richard A. Conti - Mount Kisco NY
Prakash Chimanlal Dev - Plano TX
David M. Dobuzinsky - New Windsor NY
Daniel C. Edelstein - White Plains NY
Gill Y. Lee - Wappingers Falls NY
Padraic C. Shafer - Beacon NY
Alexander Simpson - Wappingers Falls NY
Peter Wrschka - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY
Infineon Technologies A.G.

International Classification:

H01L 5140

US Classification:

438 99, 438624, 438780

Abstract:

A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3. 3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

US Patent:

20130140670, Jun 6, 2013

Filed:

Feb 5, 2013

Appl. No.:

13/759429

Inventors:

International Business Machines Corporation - Armonk NY, US
Christopher V. Baiocco - Newburgh NY, US
Richard A. Conti - Katonah NY, US
Daniel J. Jaeger - Wappingers Falls NY, US
Vijay Narayanan - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/06

US Classification:

257506

Abstract:

A substrate is provided. An STI trench is formed in the substrate. A fill material is formed in the STI trench and then planarized. The substrate is exposed to an oxidizing ambient, growing a liner at a bottom and sidewalls of the STI trench. The liner reduces the Vt-W effect in high-k metal gate devices.

US Patent:

54927188, Feb 20, 1996

Filed:

Dec 5, 1994

Appl. No.:

8/349230

Inventors:

James A. O'Neill - New City NY
Michael L. Passow - Pleasant Valley NY
Tina J. Cotler - Newburgh NY
Jonathan D. Chapple-Sokol - Poughkeepsie NY
Richard A. Conti - Mount Kisco NY
Jyothi Singh - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B05D 306
C23C 800

US Classification:

427 8

Abstract:

An apparatus for processing a layer on a workpiece includes a source of reactant fluid, a reaction chamber having a support for the workpiece and a fluid delivery apparatus for feeding an input fluid into the reaction chamber with the input fluid being utilized to process the material. An infrared sensor is adapted to cooperate with the fluid delivery apparatus for sensing the concentration of a component of the input fluid. The infrared sensor includes an infrared light source positioned to direct a beam of infrared light at an infrared light detector through the input fluid. The infrared light detector produces an electrical output signal indicative of the amount of light received by the detector and therefore not absorbed by the input fluid.

US Patent:

55340660, Jul 9, 1996

Filed:

Oct 29, 1993

Appl. No.:

8/143228

Inventors:

James A. O'Neill - New City NY
Michael L. Passow - Pleasant Valley NY
Tina J. Cotler - Newburgh NY
Jonathan D. Chapple-Sokol - Poughkeepsie NY
Richard A. Conti - Mount Kisco NY
Jyothi Singh - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B05C 500

US Classification:

118663

Abstract:

An apparatus for processing a layer on a workpiece includes a source of reactant fluid, a reaction chamber having a support for the workpiece and a fluid delivery apparatus for feeding an input fluid into the reaction chamber with the input fluid being utilized to process the material. An infrared sensor is adapted to cooperate with the fluid delivery apparatus for sensing the concentration of a component of the input fluid. The infrared sensor includes an infrared light source positioned to direct a beam of infrared light at an infrared light detector through the input fluid. The infrared light detector produces an electrical output signal indicative of the amount of light received by the detector and therefore not absorbed by the input fluid.

US Patent:

53288688, Jul 12, 1994

Filed:

Dec 10, 1992

Appl. No.:

7/989742

Inventors:

Richard A. Conti - Mount Kisco NY
Kenneth DeVries - Hopewell Junction NY
James F. White - Newburgh NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2144
H01L 2148

US Classification:

437203

Abstract:

A metal connection for an integrated circuit device is effectively "cast" in place at any level of an integrated circuit. The "mold" for the connection is formed by depositing and patterning a sacrificial material, such as aluminum oxide or other metal oxides, and covering the sacrificial material with a protective material such as silicon dioxide or other insulators. After forming bore holes to the deposit of sacrificial material through the protective layer, the sacrificial material is removed by isotropic etching to form a cavity beneath and at least partially overlaid by the protective layer. Alternatively, a defect may be produced below the protective layer and filled with metal either with or without enlargement by further removal of material. This cavity is then filled with metal by deposition of the metal by, for instance, evaporation, sputtering and chemical vapor deposition or combinations thereof. Connections formed by this technique can be produced at any level of the integrated circuit and do not interfere with surface wiring.