Richard H Greene

US Patent:

51716089, Dec 15, 1992

Filed:

Sep 28, 1990

Appl. No.:

7/589754

Inventors:

Richard F. Greene - Charlotte NC
Joseph Zahavi - Haifa, IR
Pehr E. Pehrsson - Alexandria VA
Christie R. Marrian - Marbury MD

Assignee:

The Unites States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

B05D 306
B05D 512

US Classification:

427555

Abstract:

Method for improved photolithography using a laser induced metallization cess to produce a metal mask wherein a work piece surface is treated to have a predetermined pattern of at least two materials each having different electron band gaps, the treated work piece is positioned in a metallizing solution, and the workpiece is exposed to a laser beam having a wavelength corresponding to the electron gap of a selected one of the materials. The method can advantageously be used to produce ohmic contacts for microcircuit devices.

US Patent:

50570471, Oct 15, 1991

Filed:

Sep 27, 1990

Appl. No.:

7/589102

Inventors:

Richard F. Greene - Charlotte NC
Henry F. Gray - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01J 130

US Classification:

445 24

Abstract:

A method for fabricating field emitter arrays is disclosed which uses a substrate as both an emitter tip mold and an insulating layer. A thick single crystal substrate is orientation-dependent-etched on one side to form a plurality of holes having crystallographically sharp apices or a non-crystalline substrate is etched on one side to form a plurality of holes with a high depth-to-width ratio. An emitter layer is deposited on the substrate surface and in the plurality of holes. The remainder of the field emitter array structure is then formed on the opposite side of the substrate using conventional deposition and etching techniques. Once the emitter is formed, the remaining fabrication steps are self-aligning. The field emitter array thus formed exhibits high input impedance at high frequency, making the field emitter array suitable for high frequency uses.

US Patent:

51501929, Sep 22, 1992

Filed:

Jun 20, 1991

Appl. No.:

7/718034

Inventors:

Richard F. Greene - Charlotte NC
Henry F. Gray - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 2348
H01L 2944

US Classification:

357 68

Abstract:

A field emitter structure is disclosed which comprises: a substrate selec from the group consisting of a semi-insulating substrate and an insulating substrate, the substrate having first and second surfaces and at least one hole therethrough; a first conducting layer disposed on the first surface of the substrate and having at least one aperture aligned with an associated at least one hole in the substrate, the at least one aperture of the first conducting layer comprising an extraction electrode; and a second conducting layer disposed on the second surface and projecting into the at least one hole in the substrate and into the at least one associated aperture of the first conducting layer and forming at least one associated apex inside the at least one hole, the at least one associated apex comprising an associated electron field emitter. In a second embodiment of the invention, a conducting substrate is substituted for the insulating or semi-insulating substrate, a first insulating layer is disposed between the first surface of the conducting substrate and the first conducting layer, and the second conducting layer disposed on the second surface also projects through at least one associated aperture of the first insulating later.

US Patent:

52163598, Jun 1, 1993

Filed:

Jan 18, 1991

Appl. No.:

7/644038

Inventors:

Rafic Z. Makki - Charlotte NC
Kasra Daneshvar - Charlotte NC
Farid M. Tranjan - Charlotte NC
Richard F. Greene - Charlotte NC

Assignee:

University of North Carolina - Charlotte NC

International Classification:

G01R 3128

US Classification:

324158R

Abstract:

Internal test sites on integrated circuit chips may be tested with minimal input/output pad or chip area overhead by providing transient interconnections to the internal test sites using an optically activated photoconductive layer which is formed over the active device layers of the integrated circuit to be tested. The photoconductive layer may be optically activated using an optical mask or hologram, to electrically access the desired internal test sites. Different test sites may be tested using different masks or holograms. The photoconductive layer is preferably hydrogenated amorphous silicon which is highly compatible with standard integrated circuit processing.

US Patent:

56989423, Dec 16, 1997

Filed:

Jul 22, 1996

Appl. No.:

8/681227

Inventors:

Richard F. Greene - Charlotte NC
Stephen M. Bobbio - Wake Forest NC
Farid M. Tranjan - Charlotte NC
Kasra Daneshvar - Charlotte NC
Thomas D. DuBois - Charlotte NC

Assignee:

University of North Carolina - Charlotte NC

International Classification:

H01J 130

US Classification:

313497

Abstract:

A field emitter flat panel display and associated method of operation provides an electron emission path along which a beam of electrons emitted by a microelectronic field emitter travels such that the electrons impinge upon a light emitting element without passing through a mirror. The light emitting element is spaced apart from the microelectronic field emitter and includes a mirror and a luminescence layer on the mirror. The flat panel display can also include a deflector, such as a deflector electrode, which is spaced apart from both the microelectronic field emitter and the associated light emitting element and which controllably deflects the beam of electrons emitted by the microelectronic field emitter toward the luminescent layer of the associated light emitting element and along a curved electron emission path which is independent of the underlying mirror. Since the energy of the electrons is not dissipated by passing through a mirror prior to impinging upon the luminescent layer, the field emitter flat panel display and, more particularly, the microelectronic field emitter can be efficiently driven at relatively low voltage levels while still producing a relatively bright display.