Jul 2009 to 2000 CFO/ControllerMain Street Restaurant Partners New York, NY Nov 2005 to Jul 2009 CFO/PartnerTony May Group New York, NY May 1997 to Nov 2005 CFO/ControllerArcimboldo Restaurant & Cornucopia Catering Company New York, NY Oct 1995 to May 1997 ControllerCafe Concepts, Inc New York, NY Dec 1994 to Oct 1995 ControllerHospitality Management Systems, Inc
Mar 1993 to Nov 1994 Computer ConsultantHarry Cipriani & Bellini By Cipriani New York, NY Oct 1988 to Mar 1993 ControllerCafe Argenteuil New York, NY Jun 1986 to Sep 1988 Controller
Pomme Group Real Estate Corp. New York, NY 7183003656 (Phone)
Interests:
Historic properties antiques classic cars
About:
Richard is a native New Yorker and successful entrepreneur who has founded and served as President and Senior Executive of several companies including the Nation’s two largest Healthcare Systems. His experience in LEED (green) building technologies both in new construction and historic restoration stems from his position as Executive Director and Chief Development Officer of New York’s oldest National Landmark Museum, where he directed the five building restoration alongside renowned preservation architects, craftsmen and suppliers of special products and technologies…with funds he secured from Fortune 50 companies, government grants and private foundations. Richard has managed his own real estate portfolio for decades which included a 1716 Virginia Historic Estate, a Victorian Seashore Colonial and Town Homes in New Jersey. He draws on his vast experience, exemplary knowledge and resources to seek out the right property…for the discerningly and diverse clientele who seek his guidance in buying, selling and rental of high-end New York and international properties. Richard believes in giving back to the community and serves on a number of non profit boards which support the preservation of history, foster education and promote philanthropy. He was inducted into the National Gavel Society in 2009.
Neurological Associates Of St Paul PAHealtheast Neurosurgery Clinic 17 Exchange St W STE 850, Saint Paul, MN 55102 6512323900 (phone), 6512323956 (fax)
Education:
Medical School University of Minnesota Medical School at Minneapolis Graduated: 1968
Procedures:
Craniotomy Spinal Cord Surgery Spinal Fusion Spinal Surgery
Conditions:
Intervertebral Disc Degeneration
Languages:
English
Description:
Dr. Gregory graduated from the University of Minnesota Medical School at Minneapolis in 1968. He works in Saint Paul, MN and specializes in Surgery , Neurological. Dr. Gregory is affiliated with Healtheast St Josephs Hospital.
Institute Of Aesthetic Surgery 400 Celebration Pl STE A320, Kissimmee, FL 34747 4074098000 (phone), 8667607840 (fax)
Education:
Medical School Indiana University School of Medicine Graduated: 1971
Conditions:
Abdominal Hernia Breast Disorders Cholelethiasis or Cholecystitis Malignant Neoplasm of Female Breast
Languages:
English
Description:
Dr. Gregory graduated from the Indiana University School of Medicine in 1971. He works in Kissimmee, FL and specializes in Plastic Surgery. Dr. Gregory is affiliated with Florida Hospital Celebration Health and Florida Hospital Orlando.
Orin Wayne Holland - Lenoir City TN Darrell Keith Thomas - Kingston TN Richard Bayne Gregory - Phoenix AZ Syd Robert Wilson - Phoenix AZ Thomas Allen Wetteroth - Chandler AZ
Assignee:
Lockheed Martin Energy Research Corporation - Oakridge TN Motorola, Inc. - Tempe AZ
International Classification:
H01L 2146
US Classification:
438459
Abstract:
Systems and methods are described for transfer of a thin-film via implantation, wafer bonding, and separation. A method for transfer of a thin-film, includes: implanting a source crystal with ions along a crystallographic channel and at a temperature of at least approximately 200Â C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region. The systems and methods provide advantages because the electrical carriers in the crystal, and consequently the thin-film, are not deactivated and the quality of the transferred thin-film is improved.
Walter R. Marshall - Bloomfield NJ Richard A. Gregory - Belle Mead NJ Richard H. Handwerk - South Somerville NJ
Assignee:
Union Carbide Corporation - New York NY
International Classification:
B01D 2126
US Classification:
210 84
Abstract:
Process is disclosed for effecting phase separation of relatively high and low viscosity immiscible liquids comprising maintaining, between inner means in relative rotational movement with outer sleeve means, at least one zone of increased pressure constriction and of decreased pressure constriction; feeding a multiphase mixture of relatively low viscosity and relatively high viscosity liquids to the interior of said sleeve means between said zones of increased and decreased pressure constriction; and withdrawing said high viscosity liquid and said low viscosity liquid from the vicinities of said zones of increased and decreased pressure constriction, respectively.
Means And Method For Stabilizing Polycrystalline Semiconductor Layers
Syd R. Wilson - Phoenix AZ Richard B. Gregory - Phoenix AZ Charles J. Varker - Scottsdale AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2904 H01L 21425 H01L 21265
US Classification:
29576B
Abstract:
Implantation of oxygen or nitrogen in polysilicon layers to a dose above about 10. sup. 15 ions/cm. sup. 2 retards rapid grain boundary migration of conventional dopants such as B, P, As, Sb, and the like during dopant activation. Pre-annealing of the poly films to increase the grain size also decreases rapid grain boundary migration. The efffects can be combined by first pre-annealing and then implanting oxygen or nitrogen before introducing the dopant. It is desirable to anneal the oxygen implant before introducing the dopant to allow for oxygen diffusion to the grain surfaces where is precipitates and blocks the grain boundaries. Vertical and lateral migration of the dopants can be inhibited by placing the implanted oxygen or nitrogen between the dopant and the location desired to be kept comparatively free of dopants. When very high dopant activation temperatures are used the blocking effect of the oxygen on the grain boundaries is overwhelmed by dopant diffusion through the grains.
Means For Stabilizing Polycrystalline Semiconductor Layers
Richard B. Gregory - Phoenix AZ Charles J. Varker - Scottsdale AZ
Assignee:
Motorola Inc. - Schaumberg IL
International Classification:
H01L 2978 H01L 29167 H01L 2904
US Classification:
357 63
Abstract:
Implantation of oxygen or nitrogen in polysilicon layers to a dose above about 10. sup. 15 ions/cm. sup. 2 retards rapid grain boundary migration of conventional dopants such as B, P, As, Sb, and the like during dopant activation. Pre-annealing of the poly films to increase the grain size also decreases rapid grain boundary migration. The effects can be combined by first pre-annealing and then implanting oxygen or nitrogen before introducing the dopant. It is desirable to anneal the oxygen implant before introducing the dopant to allow for oxygen diffusion to the grain surfaces where it precipitates and blocks the grain boundaries. Vertical and lateral migration of the dopants can be inhibited by placing the implanted oxygen or nitrogen between the dopant and the location desired to be kept comparatively free of dopants. When very high dopant activation temperatures are used the blocking effect of the oxygen on the grain boundaries is overwhelmed by dopant diffusion through the grains.
Method Of Preventing Hillock Formation In Polysilicon Layer By Oxygen Implanation
Syd R. Wilson - Phoenix AZ Richard B. Gregory - Phoenix AZ Charles J. Varker - Scottsdale AZ
Assignee:
Motorola Inc. - Schaumburg IL
International Classification:
H01L 21265 H01L 2904
US Classification:
437 24
Abstract:
Hillock formation as a result of heating uncapped polycrystalline silicon layers can be avoided by first implanting the uncapped poly layers with silicon, oxygen, or nitrogen prior to heating. Equivalent mono-atomic oxygen or nitrogen doses in the range of about 10. sup. 15 to about 5. times. 10. sup. 16 ions/cm. sup. 2 at energies in the range 10-50 keV are useful with good results being obtained with equivalent oxygen doses of 2. times. 10. sup. 15 ions/cm. sup. 2 at 30 keV. When polysilicon layers with this oxygen implant are heated to about 1150 degrees C. , a temperature which would ordinarily produce pronounced hillock formation in un-capped, un-treated poly layers, it is found that hillock formation is suppressed. The implanted oxygen concentrations are far below what is required to produce a separate oxide layer or phase. Some effect on poly layer sheet resistance is observed for implanted oxygen but the implanted layers have sheet resistances within a factor of two of those without the oxygen implants.
Isbn (Books And Publications)
The Dollarization Discipline: How to Translate Your Value-Added into Real Money