Richard D Gregory

US Patent:

6355541, Mar 12, 2002

Filed:

Apr 21, 1999

Appl. No.:

09/296143

Inventors:

Orin Wayne Holland - Lenoir City TN
Darrell Keith Thomas - Kingston TN
Richard Bayne Gregory - Phoenix AZ
Syd Robert Wilson - Phoenix AZ
Thomas Allen Wetteroth - Chandler AZ

Assignee:

Lockheed Martin Energy Research Corporation - Oakridge TN
Motorola, Inc. - Tempe AZ

International Classification:

H01L 2146

US Classification:

438459

Abstract:

Systems and methods are described for transfer of a thin-film via implantation, wafer bonding, and separation. A method for transfer of a thin-film, includes: implanting a source crystal with ions along a crystallographic channel and at a temperature of at least approximately 200Â C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region. The systems and methods provide advantages because the electrical carriers in the crystal, and consequently the thin-film, are not deactivated and the quality of the transferred thin-film is improved.

Address:

747 County Rd 188, Decatur, TN 37322

Phone:

4237456388

VIN:

1FTPX12V08FA66775

Make:

FORD

Model:

F-150

Year:

2008