Richard C Haight
age ~92
from Fennville, MI
- Also known as:
-
- Alice C Haight
- Dick C Haight
- Rick C Haight
- Phone and address:
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1996 Lakeshore Dr, Fennville, MI 49408
2695434345
Richard Haight Phones & Addresses
- 1996 Lakeshore Dr, Fennville, MI 49408 • 2695434345
- Ann Arbor, MI
- 2201 Clearwater Point Dr, Seneca, SC 29672
- Madison, NJ
- East Brunswick, NJ
Medicine Doctors
Richard Orlo Haight
view sourceSpecialties:
Family Medicine
General Practice
Public Health & General Preventive Medicine
General Practice
Public Health & General Preventive Medicine
Education:
University of Iowa (1974)
Isbn (Books And Publications)
Taxes In Paradise: Developing Basic Income Tax Concepts
view sourceAuthor
Richard L. Haight
ISBN #
0837707137
Taxes In Paradise: Developing Basic Income Tax Concepts
view sourceAuthor
Richard L. Haight
ISBN #
0837733014
Resumes
Richard Haight
view source
Retired
view sourceWork:
Retired
Richard Haight
view source
Richard Haight
view source
Richard Haight
view source
Richard Haight
view source
Manager - Life And Benefits At Abacus Insurance Brokers, Inc.
view sourcePosition:
Manager - Life and Benefits at Abacus Insurance Brokers, Inc.
Location:
Los Angeles, California
Industry:
Insurance
Work:
Abacus Insurance Brokers, Inc. - West Los Angeles since Jul 1988
Manager - Life and Benefits
Manager - Life and Benefits
Education:
James Monroe 1961 - 1964
Skills:
Insurance
Microsoft Office
Software Documentation
Management
Team Building
Microsoft Office
Software Documentation
Management
Team Building
Us Patents
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Removal Of Charged Defects From Metal Oxide-Gate Stacks
view source -
US Patent:7488656, Feb 10, 2009
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Filed:Apr 29, 2005
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Appl. No.:11/119310
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Inventors:Eduard A. Cartier - New York NY, US
Matthew W. Copel - Yorktown Heights NY, US
Supratik Guha - Chappaqua NY, US
Richard A. Haight - Mahopac NY, US
Fenton R. McFeely - Ossining NY, US
Vijay Narayanan - New York NY, US -
Assignee:International Business Machines Corporation - Armonk NY
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International Classification:H01L 21/336
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US Classification:438287, 438142, 438197, 438584, 438585, 438591, 438758, 438778, 438785
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Abstract:The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in forming a pFET device, has a threshold voltage substantially within the silicon band gap and good carrier mobility. Specifically, the present invention provides a re-oxidation procedure that will restore the high k dielectric of a pFET device to its initial, low-defect state. It was unexpectedly determined that by exposing a material stack including a high k gate dielectric and a metal to dilute oxygen at low temperatures will substantially eliminate oxygen vacancies, resorting the device threshold to its proper value. Furthermore, it was determined that if dilute oxygen is used, it is possible to avoid undue oxidation of the underlying semiconductor substrate which would have a deleterious effect on the capacitance of the final metal-containing gate stack. The present invention also provides a semiconductor structure that includes at least one gate stack that has a threshold voltage within a control range and has good carrier mobility.
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Back Contact Work Function Modification For Increasing Cztsse Thin Film Photovoltaic Efficiency
view source -
US Patent:20130269764, Oct 17, 2013
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Filed:Apr 12, 2012
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Appl. No.:13/445406
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Inventors:David Aaron Randolph Barkhouse - New York NY, US
Tayfun Gokmen - Briarcliff Manor NY, US
Oki Gunawan - Fair Lawn NJ, US
Richard Alan Haight - Mahopac NY, US -
Assignee:International Business Machines Corporation - Armonk NY
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International Classification:H01L 31/02
H01L 31/18 -
US Classification:136256, 438 98, 257E31124
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Abstract:Techniques for increasing conversion efficiency of thin film photovoltaic devices through back contact work function modification are provided. In one aspect, a photovoltaic device is provided having a substrate; a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts; an absorber layer on a side of the back contact opposite the substrate; a buffer layer on a side of the absorber layer opposite the back contact; and a top electrode on a side of the buffer layer opposite the absorber layer. The absorber layer preferably has thickness that is less than a depletion width+an accumulation width+a carrier diffusion length.
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Hybrid Cztsse Photovoltaic Device
view source -
US Patent:20200044107, Feb 6, 2020
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Filed:Oct 8, 2019
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Appl. No.:16/595959
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Inventors:- Armonk NY, US
Oki Gunawan - Fair Lawn NJ, US
Richard A. Haight - Mahopac NY, US
Jeehwan Kim - Cambridge MA, US
David B. Mitzi - Mohapac NY, US
Mark T. Winkler - New York NY, US -
International Classification:H01L 31/075
H01L 31/032
H01L 31/18
H01L 31/0328
H01L 31/077 -
Abstract:A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
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Tunable Earth Abundant, Non-Toxic Photovoltaic Devices For Low Light And Variable Light Level Power Applications
view source -
US Patent:20190355856, Nov 21, 2019
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Filed:May 15, 2018
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Appl. No.:15/979802
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Inventors:- Armonk NY, US
Douglas M. Bishop - New York City NY, US
Richard A. Haight - Mahopac NY, US
Yu Luo - Hopewell Junction NY, US -
International Classification:H01L 31/032
H01L 31/05
H02S 40/38
H01L 31/0224
H01L 31/18 -
Abstract:A method of fabricating a photovoltaic device includes performing fabrication operations to form the photovoltaic device. The fabrication operations include replacing a portion of selenium with sulfur in a copper zinc tin sulfur selenium alloy (CZTSSe) material arranged on a substrate to form a sulfur enriched CZTSSe material to alter a band gap of the CZTSSe material. The fabrication operations include removing surface secondary phases or degraded portions of the sulfur enriched CZTSSe material to form a single phase sulfur enriched CZTSSe material. The fabrication operations further include replacing the substrate in contact with the single phase sulfur enriched CZTSSe material with a different contact material to form an exfoliated sulfur enriched CZTSSe device.
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Formation Of Ohmic Back Contact For Ag2Znsn(S,Se)4 Photovoltaic Devices
view source -
US Patent:20190334043, Oct 31, 2019
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Filed:Jul 9, 2019
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Appl. No.:16/506794
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Inventors:- Armonk NY, US
Oki Gunawan - Westwood NJ, US
Richard A. Haight - Mahopac NY, US
Ravin Mankad - Yonkers NY, US -
International Classification:H01L 31/032
H01L 31/072
H01L 31/0224 -
Abstract:Techniques for forming an ohmic back contact for AgZnSn(S,Se)photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO, ZnO, SnO, ZnSnO, GaO, and combinations thereof. A photovoltaic device is also provided.
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High Work Function Moo2 Back Contacts For Improved Solar Cell Performance
view source -
US Patent:20180226524, Aug 9, 2018
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Filed:Feb 6, 2017
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Appl. No.:15/425717
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Inventors:- Armonk NY, US
Douglas M. Bishop - New York NY, US
Gloria W. Fraczak - Bellerose NY, US
Oki Gunawan - Westwood NJ, US
Richard A. Haight - Mahopac NY, US -
International Classification:H01L 31/0224
H01L 31/032
H01L 31/072
H01L 31/18 -
Abstract:Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.
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Formation Of Ohmic Back Contact For Ag2Znsn(S,Se)4 Photovoltaic Devices
view source -
US Patent:20170194518, Jul 6, 2017
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Filed:Dec 30, 2015
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Appl. No.:14/984512
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Inventors:- Armonk NY, US
Oki Gunawan - Westwood NJ, US
Richard A. Haight - Mahopac NY, US
Ravin Mankad - Yonkers NY, US -
International Classification:H01L 31/0224
H01L 31/032
H01L 31/18 -
Abstract:Techniques for forming an ohmic back contact for AgZnSn(S,Se)photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO, ZnO, SnO, ZnSnO, GaO, and combinations thereof. A photovoltaic device is also provided.
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Formation Of Homojunction In Kesterite-Based Semiconductors
view source -
US Patent:20170018666, Jan 19, 2017
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Filed:Jul 14, 2015
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Appl. No.:14/799089
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Inventors:- Armonk NY, US
Oki Gunawan - Westwood NJ, US
Richard A. Haight - Mahopac NY, US
Jeehwan Kim - Los Angeles CA, US -
International Classification:H01L 31/032
H01L 31/18
H01L 31/072
H01L 31/0224 -
Abstract:Kesterite-based homojunction photovoltaic devices are provided. The photovoltaic devices include a p-type semiconductor layer including a copper-zinc-tin containing chalcogenide compound and an n-type semiconductor layer including a silver-zinc-tin containing chalcogenide compound having a crystalline structure the same as a crystalline structure the copper-zinc-tin containing chalcogenide compound.
Amazon
Grand Floridians
view sourceGrand Floridians is a story with a collection of quirky characters whose seemingly unrelated lives become entangled in the seamy underbelly of murder, lust, and greed in Florida's tropical retirement paradise. Overweight and sheltered, Verbena and her fortune-seeking husband, Eldridge, are poised to...
Author
Richard Haight
Binding
Paperback
Pages
228
Publisher
iUniverse
ISBN #
144013362X
EAN Code
9781440133626
ISBN #
10
Winter Beach Dog Trot
view sourceAfter buying a struggling veterinary practice in Winter Beach, Florida, Spencer Hawley and his Boston terrier, Gidget, are reduced to seducing and abducting neighborhood dogs by night to rustle up clients. They then return them safely to their frantic owners in the morning in exchange for their grat...
Author
Richard Haight
Binding
Paperback
Pages
206
Publisher
iUniverse, Inc.
ISBN #
0595478751
EAN Code
9780595478750
ISBN #
9
Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization: Materials and Energy (World Scientific Series in Materials and Energy)
view sourceNanoscience and nanotechnology is an exciting and vibrant field of research. This new handbook, intended for researchers, engineers and advanced graduate students in all areas of nanoscience, is written by eminent scientists and experts who are pushing the forefront of instrumentation and developing...
Binding
Hardcover
Pages
312
Publisher
World Scientific Pub Co Inc
ISBN #
9814322806
EAN Code
9789814322805
ISBN #
3
Taxes In Paradise: Developing Basic Income Tax Concepts
view sourceBook by Richard L. Haight
Author
Richard L. Haight
Binding
Paperback
Pages
184
Publisher
Fred B Rothman & Co
ISBN #
0837733014
EAN Code
9780837733012
ISBN #
1
License Records
Richard Norman Haight
License #:
21183 - Active
Category:
Architect
Issued Date:
Feb 11, 2009
Expiration Date:
Apr 30, 2017
Organization:
Firm Not Published
Richard Haight
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Richard Haight
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Richard Haight
view source
Richard Haight
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Richard Haight
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Richard Haight
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Richard J Haight
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Richard Haight
view sourceClassmates
Richard Haight
view sourceSchools:
Kelloggsville High School Grand Rapids MI 1983-1987
Community:
Carol Gray, Deborah Grace, Valkyrie Springer, James Marshall
Richard Haight
view sourceSchools:
West Elementary School Jefferson WI 1985-1989
Community:
Rose Mortenson, Lee Buchholtz
Richard Haight
view sourceSchools:
Markesan High School Markesan WI 1978-1982
Richard Haight
view sourceSchools:
Prince Andrew High School Dartmouth Swaziland 1986-1990
Richard Haight
view sourceSchools:
Northwestern High School Detroit MI 1936-1940
Community:
Frances Brown, Hilton Kincaid
Richard Haight
view sourceSchools:
Kendall Elementary School Norwalk CT 1995-1999
Community:
Jeffrey Dugan, Daniel Mcdonough
Richard Haight
view sourceSchools:
Williamsport Area High School Williamsport PA 1982-1986
Community:
Harvey Kaplan
Richard Haight
view sourceSchools:
Bexley High School Bexley OH 1948-1952
Community:
Sheila Stropes, David Rossman, Jim Toronto
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