Richard L Henry

US Patent:

7198970, Apr 3, 2007

Filed:

Jan 23, 2004

Appl. No.:

10/768747

Inventors:

Martin Peckerar - Silver Spring MD, US
Richard Henry - Great Falls VA, US
Daniel Koleske - Albuquerque NM, US
Alma Wickenden - Woodbine MD, US
Ronald Holm - Alexandria VA, US
Mark E. Twigg - Falls Church VA, US

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 21/20

US Classification:

438 44, 257 76, 438492

Abstract:

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

US Patent:

7470989, Dec 30, 2008

Filed:

Aug 2, 2006

Appl. No.:

11/461904

Inventors:

Richard L Henry - Great Falls VA, US
Martin C Peckerar - Silver Spring MD, US
Daniel D Koleske - Albuquerque NM, US
Alma E Wickenden - Woodbine MD, US
Ronald T Holm - Alexandria VA, US
Mark E Twigg - Falls Church VA, US

Assignee:

The United States of America as represented by The Secretary of the Navy - Washington DC

International Classification:

H01L 23/48
H01L 23/52
H01L 29/40

US Classification:

257760, 257758, 438638, 438639

Abstract:

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

US Patent:

20060048701, Mar 9, 2006

Filed:

Sep 1, 2005

Appl. No.:

11/217854

Inventors:

Boris Feigelson - Springfield VA, US
Richard Henry - Great Falls VA, US

International Classification:

C30B 23/00
C30B 28/12
C30B 28/14
C30B 25/00

US Classification:

117089000, 117084000

Abstract:

In one embodiment, this invention pertains to a process for making single crystal gallium nitride in the region of the phase diagram of gallium nitride where gallium nitride is thermodynamically stable. The process includes the steps of placing a charged reaction vessel into a chamber, the reaction vessel containing a gallium nitride source and a salt-based solvent in contact therewith; heating the charge in the reaction vessel to render the solvent molten and to provide a temperature gradient in the molten solvent between the gallium nitride source and the growing single crystal gallium nitride in such a way that growing the single crystal gallium nitride will be in the region of the reaction vessel which, under operating conditions, will have a temperature near the low end of the temperature gradient and the gallium nitride source will be in the region of the reaction vessel which, under operating conditions, will have temperature near the high end of the temperature gradient; maintaining process conditions whereby the solvent is molten, with the gallium nitride from the gallium nitride source dissolving in the solvent under the impetus of the temperature gradient; precipitating gallium nitride out of the solvent; and discontinuing the heating step.

US Patent:

20080229549, Sep 25, 2008

Filed:

Apr 25, 2008

Appl. No.:

12/149051

Inventors:

Boris N. Feigelson - Springfield VA, US
Richard L. Henry - Great Falls VA, US

International Classification:

C30B 17/00

US Classification:

23301

Abstract:

This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (LiN) combined with barium fluoride (BaF), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.

US Patent:

53148665, May 24, 1994

Filed:

May 16, 1989

Appl. No.:

7/352325

Inventors:

Alan D. Berry - Springfield VA
David K. Gaskill - Alexandria VA
Ronald T. Holm - Alexandria VA
Edward J. Cukauskas - Vienna VA
Raphael Kaplan - Arlington VA
Richard L. Henry - Fort Washington MD

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

C23C 1600
B05D 512

US Classification:

505447

Abstract:

A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.

US Patent:

62650890, Jul 24, 2001

Filed:

Jul 15, 1999

Appl. No.:

9/353871

Inventors:

Mohammad Fatemi - McLean VA
Alma E. Wickenden - Woodbine MD
Daniel D. Koleske - Fairfax VA
Richard Henry - Great Falls VA
Mark Twigg - Falls Church VA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

B32B 900

US Classification:

428698

Abstract:

An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0. 1-10 micron thick semiconducting film disposed on the nucleating layer.