Richard N Irwin

US Patent:

6927174, Aug 9, 2005

Filed:

Aug 12, 2003

Appl. No.:

10/639330

Inventors:

Adolfo Anciso - Richardson TX, US
Patrick J. Jones - Allen TX, US
Richard B. Irwin - Richardson TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L021/461

US Classification:

438712, 438689, 438700, 438691, 438745, 438 46, 438 47, 438734

Abstract:

A method for preparing a sample includes separating a portion of substrate from a sample, performing focused ion beam milling, and removing additional sample material using an etchant.

US Patent:

6972470, Dec 6, 2005

Filed:

Mar 30, 2004

Appl. No.:

10/814673

Inventors:

Richard B. Irwin - Richardson TX, US
Tony T. Phan - Flower Mound TX, US
Jennifer S. Dumin - Wylie TX, US
Patrick J. Jones - Allen TX, US
Fredric D. Bailey - Irving TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L027/95

US Classification:

257478, 257473

Abstract:

An embodiment of the invention is a Schottky diode having a semiconductor substrate , a first metal , a barrier layer , and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diode that includes providing a semiconductor substrate , forming a barrier layer over the semiconductor substrate , forming a first metal layer over the semiconductor substrate , annealing the semiconductor substrate to form areas of reacted first metal and areas of un-reacted first metal, and removing selected areas of the un-reacted first metal. The method further includes forming a second metal layer over the semiconductor substrate and annealing the semiconductor substrate to form areas of reacted second metal and areas of un-reacted second metal.

US Patent:

7466009, Dec 16, 2008

Filed:

Jun 5, 2006

Appl. No.:

11/422221

Inventors:

Martin Mollat - McKinney TX, US
Tathagata Chatterjee - Allen TX, US
Henry L. Edwards - Garland TX, US
Lance S. Robertson - Rockwall TX, US
Richard B. Irwin - Richardson TX, US
Binghua Hu - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 29/93
H01L 23/62

US Classification:

257577, 257E21608, 257260, 257360

Abstract:

The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.

US Patent:

7638415, Dec 29, 2009

Filed:

Nov 7, 2008

Appl. No.:

12/267216

Inventors:

Martin Mollat - McKinney TX, US
Tathagata Chatterjee - Allen TX, US
Henry L. Edwards - Garland TX, US
Lance S. Robertson - Rockwall TX, US
Richard B. Irwin - Richardson TX, US
Binghua Hu - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/28
H01L 21/44

US Classification:

438570, 438571, 438573, 257E21608

Abstract:

The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well () within a substrate () and forming a suppression implant () within the substrate (). The method for manufacturing the zener diode may further include forming a cathode () and an anode () within the substrate (), wherein the suppression implant () is located proximate the doped well () and configured to reduce threading dislocations.

US Patent:

7902055, Mar 8, 2011

Filed:

Mar 30, 2005

Appl. No.:

11/095245

Inventors:

Richard B. Irwin - Richardson TX, US
Tony T. Phan - Flower Mound TX, US
Jennifer S. Dumin - Wylie TX, US
Patrick J. Jones - Allen TX, US
Fredric D. Bailey - Irving TX, US

Assignee:

Texas Instruments Incoprorated - Dallas TX

International Classification:

H01L 29/872
H01L 29/47

US Classification:

438570, 438573, 438575, 438580, 438581, 438583, 257E21047, 257E21359, 257E21368

Abstract:

An embodiment of the invention is a Schottky diode having a semiconductor substrate , a first metal , a barrier layer , and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diode that includes providing a semiconductor substrate , forming a barrier layer over the semiconductor substrate , forming a first metal layer over the semiconductor substrate , annealing the semiconductor substrate to form areas of reacted first metal and areas of un-reacted first metal, and removing selected areas of the un-reacted first metal. The method further includes forming a second metal layer over the semiconductor substrate and annealing the semiconductor substrate to form areas of reacted second metal and areas of un-reacted second metal.

US Patent:

20070210453, Sep 13, 2007

Filed:

Mar 13, 2006

Appl. No.:

11/374395

Inventors:

Jeffrey Large - Dallas TX, US
Tathagata Chatterjee - Allen TX, US
Richard Irwin - Richardson TX, US

Assignee:

Texas Instruments Inc. - Dallas TX

International Classification:

H01L 23/544
H01L 21/4763

US Classification:

257758000, 257797000, 438622000, 438401000

Abstract:

An integrated circuit comprising interconnects located in a layer on a semiconductor substrate. The circuit also comprises dummy-fill-structures located between the interconnects in the layer. The dummy-fill-structures form a plurality of fiducials, each of the fiducials being located in a different region of the layer. Each fiducial comprises a pre-defined recognition pattern that is different from every other fiducial in adjacent regions of the layer.

US Patent:

20130255741, Oct 3, 2013

Filed:

Mar 13, 2013

Appl. No.:

13/798878

Inventors:

Richard B. Irwin - Richardson TX, US
Tathagata Chatterjee - Allen TX, US

International Classification:

H01L 35/30
H01L 35/34

US Classification:

136207, 438 54, 136201

Abstract:

An integrated circuit with an embedded heat exchanger for coupling heat to an embedded thermoelectric device from a thermal source that is electrically isolated from a thermoelectric device. A method for forming an integrated circuit with an embedded heat exchanger.