1826 Coronation Blvd, Cambridge, ON N3H 3R9 5196504478, 5196504478
Richard D Irwin Director, Director , Vice President
IRWIN & ASSOCIATES, INC
2034 State Hwy 66, Rockwall, TX 75087 1785A Interstate 30 E, Rockwall, TX 75087 1785 E Interstate 30, Rockwall, TX 75087 3806 Knights Brg Rd, Rowlett, TX 75088
Richard K. Irwin Family And General Dentistry, Owner
Rki Properties Facilities Services · Nonresidential Building Operator · Real Estate Agents
9 Brigade Ct, Dallas, TX 75225 2146918211
Richard Irwin Pres
Irwin Motors Inc Auto Dealers - New Cars
5196504478, 5196504478
Richard D Irwin
WESTFIELD PLACE HOMEOWNERS ASSOCIATION, INC
Richard J Irwin
IRWIN INVESTMENTS LLC
Richard K. Irwin
IRWIN'S CUSTOM CANVAS LLC
Richard L. Irwin President, Owner
Independent Industries Inc Retail · Metals Service Center Bridge/Tunnel Construction
Hwy 18, Meeker, OK 74855 PO Box 130, Meeker, OK 74855 103482 S Hwy 18, Meeker, OK 74855 103147 S Hwy 18, Meeker, OK 74855 4052793527, 4052792313, 8006875854
Us Patents
Site-Specific Method For Large Area Uniform Thickness Plan View Transmission Electron Microscopy Sample Preparation
A method for preparing a sample includes separating a portion of substrate from a sample, performing focused ion beam milling, and removing additional sample material using an etchant.
Richard B. Irwin - Richardson TX, US Tony T. Phan - Flower Mound TX, US Jennifer S. Dumin - Wylie TX, US Patrick J. Jones - Allen TX, US Fredric D. Bailey - Irving TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L027/95
US Classification:
257478, 257473
Abstract:
An embodiment of the invention is a Schottky diode having a semiconductor substrate , a first metal , a barrier layer , and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diode that includes providing a semiconductor substrate , forming a barrier layer over the semiconductor substrate , forming a first metal layer over the semiconductor substrate , annealing the semiconductor substrate to form areas of reacted first metal and areas of un-reacted first metal, and removing selected areas of the un-reacted first metal. The method further includes forming a second metal layer over the semiconductor substrate and annealing the semiconductor substrate to form areas of reacted second metal and areas of un-reacted second metal.
Method For Reducing Dislocation Threading Using A Suppression Implant
Martin Mollat - McKinney TX, US Tathagata Chatterjee - Allen TX, US Henry L. Edwards - Garland TX, US Lance S. Robertson - Rockwall TX, US Richard B. Irwin - Richardson TX, US Binghua Hu - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 29/93 H01L 23/62
US Classification:
257577, 257E21608, 257260, 257360
Abstract:
The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.
Method For Reducing Dislocation Threading Using A Suppression Implant
Martin Mollat - McKinney TX, US Tathagata Chatterjee - Allen TX, US Henry L. Edwards - Garland TX, US Lance S. Robertson - Rockwall TX, US Richard B. Irwin - Richardson TX, US Binghua Hu - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/28 H01L 21/44
US Classification:
438570, 438571, 438573, 257E21608
Abstract:
The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well () within a substrate () and forming a suppression implant () within the substrate (). The method for manufacturing the zener diode may further include forming a cathode () and an anode () within the substrate (), wherein the suppression implant () is located proximate the doped well () and configured to reduce threading dislocations.
Method Of Manufacturing A Dual Metal Schottky Diode
Richard B. Irwin - Richardson TX, US Tony T. Phan - Flower Mound TX, US Jennifer S. Dumin - Wylie TX, US Patrick J. Jones - Allen TX, US Fredric D. Bailey - Irving TX, US
An embodiment of the invention is a Schottky diode having a semiconductor substrate , a first metal , a barrier layer , and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diode that includes providing a semiconductor substrate , forming a barrier layer over the semiconductor substrate , forming a first metal layer over the semiconductor substrate , annealing the semiconductor substrate to form areas of reacted first metal and areas of un-reacted first metal, and removing selected areas of the un-reacted first metal. The method further includes forming a second metal layer over the semiconductor substrate and annealing the semiconductor substrate to form areas of reacted second metal and areas of un-reacted second metal.
Structure And Method For Coupling Heat To An Embedded Thermoelectric Device
Richard B. Irwin - Richardson TX, US Tathagata Chatterjee - Allen TX, US
International Classification:
H01L 35/30 H01L 35/34
US Classification:
136207, 438 54, 136201
Abstract:
An integrated circuit with an embedded heat exchanger for coupling heat to an embedded thermoelectric device from a thermal source that is electrically isolated from a thermoelectric device. A method for forming an integrated circuit with an embedded heat exchanger.
License Records
Richard W Irwin
License #:
1553 - Active
Category:
Electricians
Issued Date:
Apr 5, 1976
Expiration Date:
May 31, 2018
Type:
Electrician Master
Richard W Irwin
License #:
1553 - Active
Category:
Electricians
Issued Date:
Apr 5, 1976
Expiration Date:
May 31, 2018
Type:
Electrician Master
Resumes
Data Analytics, Failure Analysis, And Material Charaterization Engineer
Statistical Analysis and Strategy Manager at Hewlett-Packard, Adjunct Professor of Material Science and Engineering at University of Texas at Dallas
Location:
Dallas/Fort Worth Area
Industry:
Semiconductors
Work:
Hewlett-Packard - Plano, TX since Jun 2013
Statistical Analysis and Strategy Manager
University of Texas at Dallas - Dallas/Fort Worth Area since 2004
Adjunct Professor of Material Science and Engineering
Texas Instruments - Dallas/Fort Worth Area Nov 2001 - Apr 2013
Senior Member of the Technical Staff
University of Central Florida - Orlando, Florida Area 1997 - 2001
Adjunct Professor of Mechanical Engineering
AT&T/Lucent/Agere - Orlando, Florida Area 1994 - 2001
Member of the Technical Staff
Education:
University of Pittsburgh 1980 - 1984
Doctor of Philosophy (Ph.D.), Physics
University of Pittsburgh 1979 - 1980
Master of Science (M.S.), Physics
University of Pittsburgh 1975 - 1979
Bachelor of Science (B.S.), Honors Physics, Mathematics, and Computer Science (triple major)
Interests:
Material Science, Failure Analysis, Innovations, Data Analysis, Materials Characterization, Testing, Mentoring, Teaching, Servant Leadership, Out-of-the-Box Thinking, Continuous Improvement, Quality, Statistics
Culmen International
Special Programs
Culmen International Mar 2016 - 2016
President and Chief Operations Officer
Goldbelt Dec 1, 2014 - Dec 31, 2015
President and Chief Executive Officer
Cead Mile Failte Consulting Jun 2013 - Dec 2014
President and Chief Executive Officer
Snvc Oct 2011 - May 2013
Chief Operating Officer and Senior Vice President National Security
Education:
York College of Pennsylvania 1973 - 1977
Bachelors, Bachelor of Science, Police Science
Skills:
Homeland Security Government Emergency Management Counterterrorism National Security Security Intelligence Program Management Crisis Management Dod Security Clearance Physical Security Government Contracting Policy Vulnerability Assessment Leadership Intelligence Analysis Defense Information Assurance Special Operations Military Force Protection Strategic Planning Operational Planning Security Operations Intelligence Community Management Enforcement Security Management Business Development International Relations Proposal Writing Command Policy Analysis Risk Assessment Protection Risk Management Weapons of Mass Destruction Project Planning Tactics Information Security Access Control Counterintelligence Incident Management Public Speaking Cloud Computing Project Management Team Building Process Improvement Team Leadership
Dr. Irwin graduated from the Tufts University School of Medicine in 1968. He works in Worcester, MA and specializes in Pulmonary Critical Care Medicine. Dr. Irwin is affiliated with UMASS Memorial Medical Center.