Richard F Marsh

US Patent:

20120322270, Dec 20, 2012

Filed:

Jun 15, 2011

Appl. No.:

13/161372

Inventors:

Maolin Long - Cupertino CA, US
Alex Paterson - San Jose CA, US
Richard Marsh - San Ramon CA, US
Ying Wu - Dublin CA, US

International Classification:

H01L 21/3065
C23F 1/08

US Classification:

438710, 15634535, 257E21218

Abstract:

A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

US Patent:

60389192, Mar 21, 2000

Filed:

Jun 6, 1997

Appl. No.:

8/870961

Inventors:

John V. Schmitt - Sunnyvale CA
Richard A. Marsh - Austin TX

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

G01F 1700

US Classification:

73149

Abstract:

In a process and apparatus for delivering a processing substance from a storage vessel to a processing station, the storage vessel enclosing a processing substance storage space and being coupled to conduits which communicate with the storage space, the storage vessel and the conduits enclosing a volume which includes the storage space, a method and system for determining the quantity of processing substance in the storage space by: closing the volume enclosed by the storage vessel and the conduits; performing first and second pressure measurements for measuring the gas pressure in the volume when the volume contains respectively first and second quantities of gas; determining the difference between the first and second quantities of gas; and calculating the quantity of processing substance in the storage space on the basis of the volume, the difference between the first and second quantities of gas and the gas pressures measured during the first and second pressure measurements.

US Patent:

58556877, Jan 5, 1999

Filed:

Oct 20, 1994

Appl. No.:

8/326506

Inventors:

Dale R. DuBois - Los Gatos CA
Alan F. Morrison - San Jose CA
Richard A. Marsh - Austin TX
Mei Chang - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600
C23C 1400
C23F 100
H01L 2100

US Classification:

118729

Abstract:

Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.

US Patent:

20230039721, Feb 9, 2023

Filed:

Oct 5, 2022

Appl. No.:

17/960576

Inventors:

- Fremont CA, US
Richard A. MARSH - San Ramon CA, US
Alexander Miller PATERSON - San Jose CA, US
John HOLLAND - San Jose CA, US

International Classification:

H01J 37/32

Abstract:

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-HO and can provide at least about 30 cfm of air.

US Patent:

20210050188, Feb 18, 2021

Filed:

Oct 29, 2020

Appl. No.:

17/084103

Inventors:

- Fremont CA, US
Richard A. MARSH - San Ramon CA, US
Alexander Miller PATERSON - San Jose CA, US
John HOLLAND - San Jose CA, US

International Classification:

H01J 37/32

Abstract:

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-HO and can provide at least about 30 cfm of air.

US Patent:

20190148118, May 16, 2019

Filed:

Nov 15, 2017

Appl. No.:

15/814139

Inventors:

- Fremont CA, US
Richard MARSH - San Ramon CA, US
Alexander PATERSON - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01J 37/32
H01L 21/67
F25D 1/00

Abstract:

A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

US Patent:

20180247796, Aug 30, 2018

Filed:

May 2, 2018

Appl. No.:

15/969583

Inventors:

- Fremont CA, US
Richard A. MARSH - San Ramon CA, US
Alexander Miller PATERSON - San Jose CA, US
John HOLLAND - San Jose CA, US

International Classification:

H01J 37/32

Abstract:

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-HO and can provide at least about 30 cfm of air.

US Patent:

20180226233, Aug 9, 2018

Filed:

Apr 6, 2018

Appl. No.:

15/947629

Inventors:

- Fremont CA, US
Alex Paterson - San Jose CA, US
Richard Marsh - San Ramon CA, US
Ying Wu - Livermore CA, US

International Classification:

H01J 37/32
H01L 21/683

Abstract:

A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.