Richard H Matthiesen

US Patent:

6375750, Apr 23, 2002

Filed:

May 18, 2000

Appl. No.:

09/575217

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - San Jose CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118728, 118500

Abstract:

An apparatus for processing a substrate comprising a processing chamber and a substrate support system comprising an electrostatic chuck having a body portion and a substrate support surface and one or more arms extending from the body portion to mount the electrostatic chuck to a side wall portion of the processing chamber is provided.

US Patent:

6890386, May 10, 2005

Filed:

Jul 12, 2002

Appl. No.:

10/194639

Inventors:

Jay Brian DeDontney - Prunedale CA, US
Richard H. Matthiesen - Scotts Valley CA, US
Samuel Kurita - Scotts Valley CA, US

Assignee:

Aviza Technology, Inc. - Scotts Valley CA

International Classification:

C23F001/00
H01L021/306
C23C016/00

US Classification:

118715, 15634533

Abstract:

An injector and exhaust assembly for providing delivery of gas to a substrate is provided. The injector and exhaust assembly comprises at least two injectors positioned adjacent each other and spaced apart to form at least one exhaust channel therebetween, and a mounting plate for securing the at least two injectors, wherein each of the at least two injectors being individually mounted to or removed from the mounting plate, and the mounting plate being provided with at least one exhaust slot in fluid communication with the at least one exhaust channel. An exhaust assembly is coupled to the mounting plate to remove exhaust gases from the injectors.

US Patent:

20020078893, Jun 27, 2002

Filed:

Nov 16, 2001

Appl. No.:

09/994008

Inventors:

Ron van Os - Sunnyvale CA, US
William Durbin - Capitola CA, US
Richard Matthiesen - Scotts Valley CA, US
Dennis Fenske - Felton CA, US
Eric Ross - Santa Cruz CA, US

Assignee:

Applied Materials , Inc.

International Classification:

C23C016/00
C23F001/00

US Classification:

118/72300I, 118/7230MW, 156/345410, 156/345480

Abstract:

A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

US Patent:

20050183825, Aug 25, 2005

Filed:

Apr 25, 2005

Appl. No.:

11/114746

Inventors:

Jay DeDontney - Prunedale CA, US
Richard Matthiesen - Scotts Valley CA, US
Samuel Kurita - Scotts Valley CA, US

International Classification:

C23F001/00
H01L021/306

US Classification:

156345330

Abstract:

An injector and exhaust assembly for providing delivery of gas to a substrate is provided. The injector and exhaust assembly comprises at least two injectors positioned adjacent each other and spaced apart to form at least one exhaust channel therebetween, and a mounting plate for securing the at least two injectors, wherein each of the at least two injectors being individually mounted to or removed from the mounting plate, and the mounting plate being provided with at least one exhaust slot in fluid communication with the at least one exhaust channel. An exhaust assembly is coupled to the mounting plate to remove exhaust gases from the injectors.

US Patent:

61789186, Jan 30, 2001

Filed:

Jun 5, 1998

Appl. No.:

9/092565

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - San Jose CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118723R

Abstract:

A plasma enhance chemical processing reactor and method. The reactor includes a plasma chamber and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wager support and a gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

US Patent:

58512942, Dec 22, 1998

Filed:

Sep 12, 1997

Appl. No.:

8/928747

Inventors:

Lydia J. Young - Palo Alto CA
Richard H. Matthiesen - Scotts Valley CA
Simon Selitser - Fremont CA
Ron van Os - Sunnyvale CA

Assignee:

Watkins-Johnson Company - Palo Alto CA

International Classification:

C23C 1600
C23C 1400

US Classification:

118715

Abstract:

A system for injecting a gaseous substance into a semiconductor processing chamber. The injection system includes at least one plenum formed in a plenum body and a plurality of nozzles associated with each plenum for injecting gaseous substances from the plenums into the chamber. A conduit structure transports gaseous substances along an indirect path from the plenum to the nozzles. The nozzles are positioned and configured to provide a uniform distribution of gaseous substances across the wafer surface.

US Patent:

57922721, Aug 11, 1998

Filed:

Aug 12, 1997

Appl. No.:

8/909580

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - Scotts Valley CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Watkins-Johnson Company - Palo Alto CA

International Classification:

C23C 1600

US Classification:

118723IR

Abstract:

A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

US Patent:

60012676, Dec 14, 1999

Filed:

Feb 21, 1997

Appl. No.:

8/804212

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - San Jose CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Watkins-Johnson Company - Palo Alto CA

International Classification:

B44C 122
C03C 1500

US Classification:

216 67

Abstract:

A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support, applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support, and exhausting the reactor in a substantially symmetrical manner.