Richard F Merrill

US Patent:

7541627, Jun 2, 2009

Filed:

Mar 8, 2004

Appl. No.:

10/796763

Inventors:

Jaroslav Hynecek - Allen TX, US
Richard B. Merrill - Woodside CA, US
Russel A. Martin - Menlo Park CA, US

Assignee:

Foveon, Inc. - San Jose CA

International Classification:

H01L 29/768

US Classification:

257224, 257389, 257392, 257393, 257394, 257395, 257398, 257399, 257400, 257E27131, 257E27132, 257E27134, 257E27135

Abstract:

The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.

US Patent:

8487349, Jul 16, 2013

Filed:

Apr 24, 2009

Appl. No.:

12/429600

Inventors:

Jaroslav Hynecek - Allen TX, US
Richard B. Merrill - Woodside CA, US
Russel A. Martin - Menlo Park CA, US

Assignee:

Foveon, Inc. - Santa Clara CA

International Classification:

H01L 29/02

US Classification:

257224, 257389, 257392, 257393, 257394, 257395, 257E27131, 257E27132, 257E27134, 257E27135

Abstract:

The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.

Address:

3266 Golfing Grn Dr, Farmers Branch, TX 75234

Phone:

9722418403

VIN:

1G4HP57207U200913

Make:

BUICK

Model:

LUCERNE

Year:

2007