Richard Wendell Parsons

US Patent:

6351683, Feb 26, 2002

Filed:

Apr 19, 2000

Appl. No.:

09/508105

Inventors:

Wayne Johnson - Phoenix AZ
Richard Parsons - Phoenix AZ

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G06F 1900

US Classification:

700121, 700117, 700116, 700108, 438 8, 438 9, 438 17, 438 10, 156345, 156346, 156348, 324622, 324623, 324647

Abstract:

A system and method for monitoring the conditions in a gas plasma processing system while varying or modulating the RF power supplied to the system, so that resulting signals of the electrical circuits of the system provide information regarding operational parameters of the system or the state of a process. Significant improvements in sensitivity and accuracy over conventional techniques are thereby achieved. In addition, the plasma processing system can be thoroughly tested and characterized before delivery, to allow more accurate monitoring of and greater control over a process, thereby improving quality control/assurance of substrates being produced by the system. The information obtained by the modulation technique can be displayed on a monitor screen, in order to allow an operator to accurately monitor the system/process and diagnose any problems with the system/process.

US Patent:

6535785, Mar 18, 2003

Filed:

Oct 31, 2001

Appl. No.:

09/984760

Inventors:

Wayne Johnson - Phoenix AZ
Richard Parsons - Phoenix AZ

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G06F 1900

US Classification:

700121, 700117, 700118, 700108, 438 8, 438 9, 438 17, 156345, 156346, 156348, 324622, 324623, 324647

Abstract:

A system and method for monitoring the conditions in a gas plasma processing system while varying or modulating the RF power supplied to the system, so that resulting signals of the electrical circuits of the system provide information regarding operational parameters of the system or the state of a process. Significant improvements in sensitivity and accuracy over conventional techniques are thereby achieved. In addition, the plasma processing system can be thoroughly tested and characterized before delivery, to allow more accurate monitoring of and greater control over a process, thereby improving quality control/assurance of substrates being produced by the system. The information obtained by the modulation technique can be displayed on a monitor screen, in order to allow an operator to accurately monitor the system/process and diagnose any problems with the system/process.

US Patent:

6884635, Apr 26, 2005

Filed:

Sep 17, 2002

Appl. No.:

10/244417

Inventors:

Richard Parsons - Phoenix AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L021/00
H00H001/00
C23C016/00

US Classification:

438 10, 438710, 427569, 15634528, 15634543, 15634547, 15634548, 118723 E, 118723 I

Abstract:

An RF power supply system () for use with an electrode () in a plasma reactor system () capable of supporting a plasma () with a plasma load impedance (Z), wherein the electrode comprises a plurality of electrode segments (). The system comprises a master oscillator (), and a plurality of RF power supply subsystems () each electronically connected thereto, and to respective ones of the electrode segments. Each RF power supply subsystem includes a phase shifter (), an amplifier/power supply (), a circulator (), a directional coupler (), and a match network (MN/L). The latter has a match network impedance. The system further includes a control system () electronically connected to each RF power supply subsystem. The control system dynamically changes the match network impedance for each subsystem to match the plasma load impedance, and also adjusts one or more of the phase shifters in response to an electrode segment receiving power from other electrode segments. A method of controlling the RF power supply system is disclosed, as is a method for processing a substrate () with a plasma processing system having the RF power supply system of the present invention.

US Patent:

6917204, Jul 12, 2005

Filed:

Jul 3, 2003

Appl. No.:

10/612824

Inventors:

Andrej S. Mitrovic - Phoenix AZ, US
Jovan Jevtic - Milwaukee WI, US
Richard Parsons - Phoenix AZ, US
Murray D. Sirkis - Tempe AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G01N027/62
G01R023/20
H05H001/24
H01L021/00

US Classification:

324464, 324622, 324623, 427569, 438 9

Abstract:

A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signal. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.

US Patent:

7102292, Sep 5, 2006

Filed:

Jun 3, 2004

Appl. No.:

10/859603

Inventors:

Richard Parsons - Mesa AZ, US
Wayne L Johnson - Phoenix AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01J 7/24

US Classification:

31511121, 31511141, 118723 I

Abstract:

A system and method for maintaining a plasma in a plasma region by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are reduced by placing RF energy absorbing resistive loads in energy receiving communication with the plasma, the resistive loads having a frequency dependent attenuation characteristic such that the resistive loads attenuate electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.

US Patent:

7154256, Dec 26, 2006

Filed:

Feb 27, 2003

Appl. No.:

10/504159

Inventors:

Richard Parsons - Phoenix AZ, US
Robert Jackson - Gilbert AZ, US
Deana R. Delp - Tempe AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G01R 31/02

US Classification:

324 72, 324 725, 324713

Abstract:

Integrated voltage and current (VI) probe () for integration inside a transmission line () having inner () and an outer () conductors. Current probes, often implemented as loop antennas, can be coupled to the outer conductor. The probes can either be built onto the same panel or on different panels.

US Patent:

7158845, Jan 2, 2007

Filed:

Oct 31, 2002

Appl. No.:

10/493470

Inventors:

Richard Parsons - Phoenix AZ, US
Deana R. Delp - Tempe AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G06F 19/00

US Classification:

700 96, 700 83, 700222, 702188, 715736

Abstract:

A process monitoring system () for monitoring a plasma processing system. The process monitoring system () includes a plurality of processing subsystems (), and a control system () coupled to the processing subsystems (). The control system () is configured to receive monitor data from the processing subsystems () and send control data to the processing subsystems (). The process monitoring system () also includes an external interface () coupled to the control system (), where the external interface () includes a paging system. The process monitoring system further includes a man-machine interface (MMI) coupled to the control system (). The MMI is configured to display the monitor data, display the control data, and access the paging system.

US Patent:

7164236, Jan 16, 2007

Filed:

Mar 5, 2004

Appl. No.:

10/793253

Inventors:

Andrej S. Mitrovic - Phoenix AZ, US
Eric J. Strang - Chandler AZ, US
Murray D. Sirkis - Tempe AZ, US
Bill H. Quon - Brea CA, US
Richard Parsons - Phoenix AZ, US
Yuji Tsukamoto - Wilmington MA, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H05B 31/26
C23F 1/00

US Classification:

31511101, 15634544

Abstract:

A method and apparatus for generating and controlling a plasma () formed in a capacitively coupled plasma system () having a plasma electrode () and a bias electrode in the form of a workpiece support member (), wherein the plasma electrode is unitary and has multiple regions (R) defined by a plurality of RF power feed lines () and the RF power delivered thereto. The electrode regions may also be defined as electrode segments () separated by insulators (). A set of process parameters A={n, τ, Φ, P, S; L} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations L, τis the on-time of the RF power for the iRF feed line, Φis the phase of the iRF feed line relative to a select one of the other RF feed lines, Pis the RF power delivered to the electrode through the iRF feed line at location L, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece () being processed with a desired amount or degree of process uniformity.