Richard M Plecenik

US Patent:

45929335, Jun 3, 1986

Filed:

Jun 29, 1984

Appl. No.:

6/626504

Inventors:

Bernard S. Meyerson - Yorktown Heights NY
Richard M. Plecenik - Wappingers Falls NY
Bruce A. Scott - Pleasantville NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23C 1600
C23C 1630

US Classification:

4272551

Abstract:

A technique and apparatus for homogeneous chemical vapor deposition (HCVD), wherein a heated carrier gas is mixed with a source gas in a location close to a substrate on which deposition is to occur. The heated carrier gas transfers heat to the source gas in order to decompose it, producing the intermediate species necessary for deposition onto the substrate. Thus, the source gas is not subjected to heating above its pyrolysis temperature prior to being transported to the immediate vicinity of the substrate. This HCVD apparatus includes a heat source for heating the carrier gas, a tube for bringing the heated carrier gas to a location close to the substrate, and another tube for bringing the reactive source gas to the aforementioned location where it is mixed with the hot carrier gas to cause decomposition of the source gas close to the substrate. The substrate temperature is decoupled from the hot gas temperature and is significantly colder than the hot gas temperature. Simultaneous deposition onto a plurality of substrates is possible, and the system can be scaled-up to provide deposition over a large area.