Richard A Spaulding

US Patent:

43386342, Jul 6, 1982

Filed:

Nov 17, 1980

Appl. No.:

6/207813

Inventors:

Peter L. P. Dillon - Pittsford NY
Evan A. Edwards - Pittsford NY
Richard A. Spaulding - Longwood FL

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H04N 336

US Classification:

358214

Abstract:

A frame-rate converting film scanner includes means for continuously advancing film at a selected frame rate and for projecting an image of the moving film onto a solid state image sensor for producing a television signal at a standard television field rate. The solid state image sensor includes: (1) a two-dimensional array of image sensing elements having a width equal to the width of the projected image of a film frame and a height equal ot the projected image of 2+X/Y film frames, where X is the projection rate of the film in frames per second and Y is the field rate of the standard video signal in fields per second, (2) a two-dimensional frame storage array, (3) an output register, and (4) a "drain gate" disposed between the image sensing array and the frame storage array and operable in a first mode to transfer signals from the image sensing array to the storage array and in a second mode to drain signals from the image sensing array. The image of the moving film is projected on the image sensing array to produce an imagewise pattern of photocharge and the sensing array is operated to move the pattern of photocharge accumulated in the array in synchronism with the moving image. As lines of photocharge are advanced to the top of the sensing array, they are dumped by the drain gate.

US Patent:

46138951, Sep 23, 1986

Filed:

Nov 13, 1978

Appl. No.:

5/959830

Inventors:

Bruce C. Burkey - Rochester NY
Roger S. VanHeyningen - Rochester NY
Richard A. Spaulding - Longwood FL
Edward L. Wolf - Ames IA

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H04N 904

US Classification:

358 41

Abstract:

An image sensing element in a solid state imaging device is provided with a plurality of superposed channels disposed at respective distances from a light receiving surface of the device, each of such channels having a different characteristic spectral response due to the differential absorption of light by a semiconductor. By so disposing the channels, the device becomes a color imaging sensor having optimized resolution. The top channel, i. e. the channel nearest the surface of the device, may be either a "surface" channel or a "buried" channel, the lower channel(s) being buried channels. Depending upon the design of the element, either electrons or holes may be accumulated as photocharges in respective superposed channels. The color photocharges generated in respective channels of such an image sensing element are simultaneously moved in a plurality of superposed channels by a multiple superposed channel signal handling device such as a multiple channel charge coupled device (CCD), thus the solid state imaging device does not require special timing networks to correct for phase differences between color signals which result from a common point within an image.