Richard H Wallace

US Patent:

8293009, Oct 23, 2012

Filed:

Nov 17, 2011

Appl. No.:

13/299031

Inventors:

Emanuel M. Sachs - Newton MA, US
Richard L. Wallace - Acton MA, US
Eerik T. Hantsoo - Livermore CA, US
Adam M. Lorenz - Arlington MA, US
G. D. Stephen Hudelson - Lexington MA, US
Ralf Jonczyk - Wilmington DE, US

Assignee:

1366 Technologies Inc. - Lexington MA

International Classification:

C30B 15/02

US Classification:

117 13, 117 40, 117 45, 117 50, 117 54

Abstract:

A pressure differential is applied across a mold sheet and a semiconductor (e. g. silicon) wafer (e. g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

US Patent:

20050034654, Feb 17, 2005

Filed:

Aug 8, 2002

Appl. No.:

10/215391

Inventors:

Mary Cretella - Bedford MA, US
Richard Wallace - Acton MA, US

Assignee:

Evergreen Solar, Inc. - Marlborough MA

International Classification:

C30B023/00
C30B025/00
C30B028/12
C30B028/14

US Classification:

117095000

Abstract:

Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

US Patent:

20050112855, May 26, 2005

Filed:

Nov 24, 2004

Appl. No.:

10/997160

Inventors:

Mary Cretella - Bedford MA, US
Richard Wallace - Acton MA, US

Assignee:

Evergreen Solar, Inc. - Waltham MA

International Classification:

H01L021/22
H01L021/38

US Classification:

438567000

Abstract:

Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

US Patent:

20070254462, Nov 1, 2007

Filed:

Apr 20, 2007

Appl. No.:

11/788475

Inventors:

Mary Cretella - Bedford MA, US
Richard Wallace - Acton MA, US

Assignee:

Evergreen Solar, Inc. - Marlborough MA

International Classification:

H01L 21/22

US Classification:

438565000

Abstract:

Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

US Patent:

20110247549, Oct 13, 2011

Filed:

Mar 9, 2010

Appl. No.:

12/999206

Inventors:

Emanuel M. Sachs - Newton MA, US
Richard L. Wallace - Acton MA, US
Eerik T. Hantsoo - Cambridge MA, US
Adam M. Lorenz - Arlington MA, US
G. D. Stephen Hudelson - Lexington MA, US
Ralf Jonczyk - Wilmington DE, US

Assignee:

1366 TECHNOLOGIES INC. - Lexington MA

International Classification:

C30B 11/02
C30B 15/00

US Classification:

117 81, 264164

Abstract:

A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

US Patent:

20120038031, Feb 16, 2012

Filed:

Jan 6, 2010

Appl. No.:

13/142472

Inventors:

Emanuel M. Sachs - Newton MA, US
Richard L. Wallace - Acton MA, US
James F. Bredt - Watertown MA, US
Benjamin F. Polito - Gorham ME, US
Ali Ersen - Chestnut Hill MA, US

Assignee:

1366 TECHNOLOGIES INC. - Lexington MA

International Classification:

H01L 23/544
B65D 35/38

US Classification:

257622, 222566, 257E23179

Abstract:

Materials that contain liquid are deposited into grooves upon a surface of a work piece, such as a silicon wafer to form a solar cell. Liquid can be dispensed into work piece paths, such as grooves under pressure through a dispensing tube. The tube mechanically tracks in the groove. The tube may be small and rest at the groove bottom, with the sidewalls providing restraint. Or it may be larger and ride on the top edges of the groove. A tracking feature, such as a protrusion, Non-circular cross-sections, molded-on protrusions and lobes also enhance tracking. The tube may be forced against the groove by spring or magnetic loading. Alignment guides, such as lead-in features may guide the tube into the groove. Restoring features along the path may restore a wayward tube. Many tubes may be used. Many work pieces can be treated in a line or on a drum.

US Patent:

58866434, Mar 23, 1999

Filed:

Sep 17, 1996

Appl. No.:

8/715186

Inventors:

Robert S. Diebboll - Lincoln MA
Richard B. Wallace - Marlborough MA
Ferdinand Engel - Northboro MA

Assignee:

Concord Communications Incorporated - Marlboro MA

International Classification:

H04J 116

US Classification:

34082508

Abstract:

A method of processing data from a plurality of probes which monitor traffic over a network, which includes a plurality of segments to which are connected a plurality of nodes, the method including the steps of polling the probes for monitoring data; receiving polled data from the plurality of probes; storing the polled data in a plurality of records, each of the records identifying at least a probe, a source node, a destination node, and a measure of traffic between the identified source node and destination node in that record; for a selected source-destination node pair, determining which of the plurality of probes produced a most complete report of traffic associated with that selected source-destination node pair; identifying those records among the plurality of records that designate both the probe which produced the most complete report of traffic and the selected source-destination node pair; and distinguishing within the plurality of records the identified records from the other records.

US Patent:

20180019365, Jan 18, 2018

Filed:

Oct 14, 2015

Appl. No.:

15/546030

Inventors:

- BEDFORD MA, US
KERNAN D BRIAN - ANDOVER MA, US
RICHARD L. WALLACE - ACTON MA, US
ADAM M LORENZ - ARLINGTON MA, US

Assignee:

1366 TECHNOLOGIES, INC. - BEDFORD MA

International Classification:

H01L 31/18
H01L 31/0224
H01L 31/0216
H01L 31/0288
H01L 31/056

Abstract:

A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.