Richard T Weber

US Patent:

50029010, Mar 26, 1991

Filed:

Oct 3, 1988

Appl. No.:

7/251816

Inventors:

Anthony D. Kurtz - Teaneck NJ
Timothy A. Nunn - Ridgewood NJ
Richard A. Weber - Denville NJ

Assignee:

Kulite Semiconductor Products, Inc. - Leonia NJ

International Classification:

H01L 2720

US Classification:

437228

Abstract:

A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacrificial wafer, after being subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by mean of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.

US Patent:

39517071, Apr 20, 1976

Filed:

Apr 15, 1974

Appl. No.:

5/460818

Inventors:

Anthony D. Kurtz - Englewood NJ
Joseph R. Mallon - Wood Ridge NJ
Harold Bernstein - Hillsdale NJ
Richard Alan Weber - Denville NJ

Assignee:

Kulite Semiconductor Products, Inc. - Ridgefield NJ

International Classification:

C23F 104

US Classification:

156 3

Abstract:

A glass or other dielectric backed transducer structure is formed by utilizing a series of processes including at least one electrostatic bond. The processes enable one to bond a semiconductor wafer to a dielectric as a glass wafer. Then by selectively removing certain conductively semiconductor, one obtains a "thin ribbon" piezoresistive bridge secured to a thin glass wafer. The resultant structure is entirely unanticipated by the prior art. A glass part is also formed by electrostatically bonding a glass wafer to a semiconductor wafer, polishing the glass to a desired depth, masking the polished glass layer according to a desired pattern representative of the glass part, etching away all the glass except the desired pattern, and thence removing all the semiconductor.

US Patent:

48148563, Mar 21, 1989

Filed:

May 7, 1986

Appl. No.:

6/860523

Inventors:

Anthony D. Kurtz - Teaneck NJ
Timothy A. Nunn - Ridgewood NJ
Richard A. Weber - Denville NJ

Assignee:

Kulite Semiconductor Products, Inc. - Leonia NJ

International Classification:

H01L 2720

US Classification:

357 73

Abstract:

A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.

US Patent:

42041856, May 20, 1980

Filed:

Oct 13, 1977

Appl. No.:

5/841679

Inventors:

Anthony D. Kurtz - Englewood NJ
Richard A. Weber - Denville NJ

Assignee:

Kulite Semiconductor Products, Inc. - Ridgefield NJ

International Classification:

G01L 122

US Classification:

338 4

Abstract:

A pressure transducer is formed on an N-type wafer of silicon by depositing on the wafer a P+ layer. A thin N-type layer is then formed on the P+ layer. The N layer which is relatively thin, will form a diaphragm for piezoresistors which are deposited on the N layer. The P+ layer acts as a stop to enable a central aperture to be formed or etched into the N wafer; which aperture defines an active deflecting area for the thin N-type diaphragm. The various layers are crystallographically homogeneous to enable the piezoresistors to exhibit high coefficients and hence, provide a sensitive transducer assembly.

US Patent:

47392983, Apr 19, 1988

Filed:

Feb 28, 1985

Appl. No.:

6/706889

Inventors:

Anthony D. Kurtz - Teaneck NJ
Richard A. Weber - Denville NJ
Timothy A. Nunn - Ridgewood NJ
Joseph R. Mallon - Franklin Lakes NJ

Assignee:

Kulite Semiconductor Products, Inc. - Leonia NJ

International Classification:

G01L 122

US Classification:

338 2

Abstract:

A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.

US Patent:

46723544, Jun 9, 1987

Filed:

Dec 5, 1985

Appl. No.:

6/804761

Inventors:

Anthony D. Kurtz - Teaneck NJ
Timothy A. Nunn - Ridgewood NJ
Richard A. Weber - Denville NJ

Assignee:

Kulite Semiconductor Products, Inc. - Ridgefield NJ

International Classification:

H01L 21306
B44C 122
G01B 716
H01C 1700

US Classification:

338 4

Abstract:

There is disclosed apparatus and methods of fabricating a piezoresistive semiconductor structure for use in a transducer. According to one method, a layer of silicon dioxide is grown over the surface of a first semiconductor wafer which is designated as a carrier wafer. A layer of glas is then formed on the top surface of the carrier wafer over said layer of silicon dioxide. A second wafer has diffused therein a high conductivity semiconductor layer which is diffused on a top surface of a sacrificial semiconductor wafer. The first and second wafers are then bonded together by means of an electrostatic bond with the high conductivity layer of the sacrificial wafer facing the glass layer of the first wafer. After securing the wafers together, one may etch away the remaining portion of the sacrificial wafer to provide a high conductivity resistive layer which is secured to the glass layer of the first wafer and is patterned to form a resistive network using standard photolithographic making. In another embodiment, the sacrificial wafer is processed by means of a high conductivity diffusion procedure whereby a resistive line pattern is formed in the second wafer.