Jack Oon Chu - Manhasset Hills NY Douglass Duane Coolbaugh - Essex Junction VT James Stuart Dunn - Jericho VT David R. Greenberg - White Plains NY David L. Harame - Essex Junction VT Basanth Jagannathan - Stormville NY Robb Allen Johnson - South Burlington VT Louis D. Lanzerotti - Burlington VT Kathryn Turner Schonenberg - New Fairfield CT Ryan Wayne Wuthrich - Burlington VT
Assignee:
International Business Machines Corporation - Armonk NY
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
Incorporation Of Carbon In Silicon/Silicon Germanium Epitaxial Layer To Enhance Yield For Si-Ge Bipolar Technology
Jack Oon Chu - Manhasset Hills NY, US Douglas Duane Coolbaugh - Essex Junction VT, US James Stuart Dunn - Jericho VT, US David R. Greenberg - White Plains NY, US David L. Harame - Essex Junction VT, US Basanth Jagannathan - Stormville NY, US Robb Allen Johnson - South Burlington VT, US Louis D. Lanzerotti - Burlington VT, US Kathryn Turner Schonenberg - New Fairfield CT, US Ryan Wayne Wuthrich - Burlington VT, US
Assignee:
International Business Machines Corporation - Armonk NY
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
Incorporation Of Carbon In Silicon/Silicon Germanium Epitaxial Layer To Enhance Yield For Si-Ge Bipolar Technology
Jack Oon Chu - Manhasset Hills NY, US Douglas Duane Coolbaugh - Essex Junction VT, US James Stuart Dunn - Jericho VT, US David R. Greenberg - White Plains NY, US David L. Harame - Essex Junction VT, US Basanth Jagannathan - Stormville NY, US Robb Allen Johnson - South Burlington VT, US Louis D. Lanzerotti - Burlington VT, US Kathryn Turner Schonenberg - New Fairfield CT, US Ryan Wayne Wuthrich - Burlington VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/8222 H01L 29/737
US Classification:
438313, 438203, 438235, 438309
Abstract:
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
Incorporation Of Carbon In Silicon/Silicon Germanium Epitaxial Layer To Enhance Yield For Si-Ge Bipolar Technology
Jack Chu - Manhasset Hills NY, US Douglas Coolbaugh - Essex Junction VT, US James Dunn - Jericho VT, US David Greenberg - White Plains NY, US David Harame - Essex Junction VT, US Basanth Jagannathan - Stormville NY, US Robb Johnson - South Burlington VT, US Louis Lanzerotti - Burlington VT, US Kathryn Schonenberg - New Fairfield CT, US Ryan Wuthrich - Burlington VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L031/0328 H01L021/8249 H01L031/0336
US Classification:
257/197000, 438/235000
Abstract:
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
Structure And Method For Formation Of A Bipolar Resistor
Arne Ballantine - Cold Spring NY, US Donna Johnson - Underhill VT, US Matthew Gallagher - Burlington VT, US Peter Geiss - Underhill VT, US Jeffrey Gilbert - Burlington VT, US Shwu-Jen Jeng - Wappingers Falls NY, US Robb Johnson - South Burlington VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L021/336
US Classification:
438261000
Abstract:
A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.
marking the centenary of the event that sparked the First World War with a new song she will sing at Glastonbury. Ward, along with Mat Skinner, O'Hooley & Tidow, Robb Johnson and Sam Duckworth will all play new songs they have composed about the assassination of Archduke Franz Ferdinand.
Monte Gardens Elementary School Concord CA 1973-1975, Semple Elementary School Benicia CA 1975-1978, Dhahran Academy Dhahran Saudi Arabia 1978-1979, Jubail International School - American Division Jubail Saudi Arabia 1979-1980, Coventry Middle School Coventry RI 1980-1981, Greystone Elementary School North Providence RI 1981-1981
Community:
Danielle Warner, Taresa Murphy, Lisa Denning, Laura Terry, Wally Armstrong, John Vetro
Hope Valley Elementary School Hope Valley RI 1982-1990
Community:
Steven Steadman, Jennifer Gamble, Melvin Butler, Warner Warner, Robert Delio, Stan Esco, Shawnee Pierre, Heidie Mariani, Tracy Pelchat, Ric Wang, Julie Brown
Elisabeth Aspling, Lisa Jenkins, James Harvey, Sherri Quist, Tina Brink, Deb Hubbartt, Kim Olmstead, Patric Mcmunn, Kathy Nelson, Barbara Jackson, Tricia Sherman