Robert A Bryant

US Patent:

6686437, Feb 3, 2004

Filed:

Oct 23, 2001

Appl. No.:

09/983182

Inventors:

Alisa Buchman - Haifa, IL
Raymond G. Payne - Virginia Beach VA
David G. Mendes - Haifa, IL
Simha Sibony - Naharia, IL
Robert G. Bryant - Lightfoot VA

Assignee:

M.M.A. Tech Ltd. - Migdal Haemek

International Classification:

C08G 7310

US Classification:

528170, 528353, 623 16, 623 1811, 623 66, 623 20, 264241, 264250, 264255, 264259, 128898

Abstract:

A medical implant having at least a portion thereof made of a formable, pyromellitic, dianhydride (PMDA)-free, non-halogenated, aromatic polyimide is disclosed. Further disclosed are a process of manufacturing the implant and a method of implanting the implant in a subject in need thereof.

US Patent:

6734603, May 11, 2004

Filed:

Jan 24, 1997

Appl. No.:

08/797553

Inventors:

Richard F. Hellbaum - Hampton VA
Robert G. Bryant - Poquoson VA
Robert L. Fox - Hayes VA
Antony Jalink, Jr. - Newport News VA
Wayne W. Rohrbach - Yorktown VA
Joycelyn O. Simpson - Hampton VA

Assignee:

The United States of America as represented by the National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 4108

US Classification:

310330, 310332

Abstract:

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

US Patent:

7019621, Mar 28, 2006

Filed:

Jan 2, 2001

Appl. No.:

09/753370

Inventors:

Stanley E. Woodard - Hampton VA, US
Robert L. Fox - Hayes VA, US
Robert G. Bryant - Lightfoot VA, US

International Classification:

G08B 3/10

US Classification:

3403846, 3404071, 340 76, 310311, 310321, 310326, 310327, 310332, 310334, 310348, 310357, 310367, 381345, 381353, 381354, 381190, 367140

Abstract:

A piezoelectric transducer comprises a piezoelectric component, an acoustic member attached to one of the surfaces of the piezoelectric component and a dampening material of low elastic modulus attached to one or both surfaces of the piezoelectric transducer. The piezoelectric component may comprise either an unimorph or a bimorph structure including a piezoceramic wafer made of lead zirconate titanate and a layer of dampening material sandwiched between the piezoelectric component and the acoustic member. The acoustic member comprises a surrounding wall portion and an end portion which form an acoustic chamber when the member is mounted on a surface of the piezoelectrie component. The end portion has an orifice to form a passageway from the chamber through the end portion to the outside of the member.

US Patent:

7086593, Aug 8, 2006

Filed:

Apr 30, 2004

Appl. No.:

10/839445

Inventors:

Stanley E. Woodard - Hampton VA, US
Bryant D. Taylor - Smithfield VA, US
Qamar A. Shams - Yorktown VA, US
Robert G. Bryant - Lightfoot VA, US

Assignee:

The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC

International Classification:

G06K 7/08

US Classification:

235449, 235435

Abstract:

Magnetic field response sensors designed as passive inductor-capacitor circuits produce magnetic field responses whose harmonic frequencies correspond to states of physical properties for which the sensors measure. Power to the sensing element is acquired using Faraday induction. A radio frequency antenna produces the time varying magnetic field used for powering the sensor, as well as receiving the magnetic field response of the sensor. An interrogation architecture for discerning changes in sensor's response frequency, resistance and amplitude is integral to the method thus enabling a variety of measurements. Multiple sensors can be interrogated using this method, thus eliminating the need to have a data acquisition channel dedicated to each sensor. The method does not require the sensors to be in proximity to any form of acquisition hardware. A vast array of sensors can be used as interchangeable parts in an overall sensing system.

US Patent:

20120186742, Jul 26, 2012

Filed:

Jul 26, 2011

Appl. No.:

13/136216

Inventors:

Jin Ho Kang - Newport News VA, US
Cheol Park - Yorktown VA, US
Godfrey Sauti - Hampton VA, US
Michael W. Smith - Newport News VA, US
Kevin C. Jordan - Newport News VA, US
Sharon E. Lowther - Hampton VA, US
Robert George Bryant - Lightfoot VA, US

Assignee:

National Institute of Aerospace Associates - Hampton VA
Thomas Jefferson National Accelerator Facility - Newport News VA
Space Administration - Washington DC

International Classification:

B29C 70/50
C08L 33/24
C08K 3/38
B82Y 40/00
B82Y 30/00

US Classification:

156324, 524404, 977762, 977742, 977773, 977734, 977890

Abstract:

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar, Spectra, ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800 C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

US Patent:

20140017480, Jan 16, 2014

Filed:

Jul 12, 2013

Appl. No.:

13/941441

Inventors:

Keith L. Gordon - Hampton VA, US
Godfrey Sauti - Hampton VA, US
Sharon E. Lowther - Hampton VA, US
Robert G. Bryant - Poquoson VA, US

International Classification:

C08K 3/04
C08K 3/30
C08K 5/42
C08K 5/3445
C08K 3/24
C07K 14/00
C08K 3/38
C08K 3/08
C08L 67/00
C08L 67/04
C08L 49/00
C08K 3/32
C08K 3/28

US Classification:

428221, 524417, 524423, 524165, 524106, 524401, 524428, 524404, 524599, 524606, 524440, 1061241, 1061511, 1061502, 10615411, 1061576, 1061572

Abstract:

Some implementations provide a composite material that includes a first material and a second material. In some implementations, the composite material is a metamaterial. The first material includes a chiral polymer (e.g., crystalline chiral helical polymer, poly-γ-benzyl-L-glutamate (PBLG), poly-L-lactic acid (PLA), polypeptide, and/or polyacetylene). The second material is within the chiral polymer. The first material and the second material are configured to provide an effective index of refraction value for the composite material of 1 or less. In some implementations, the effective index of refraction value for the composite material is negative. In some implementations, the effective index of refraction value for the composite material of 1 or less is at least in a wavelength of one of at least a visible spectrum, an infrared spectrum, a microwave spectrum, and/or an ultraviolet spectrum.

US Patent:

56328419, May 27, 1997

Filed:

Apr 4, 1995

Appl. No.:

8/416598

Inventors:

Richard F. Hellbaum - Hampton VA
Robert G. Bryant - Poquoson VA
Robert L. Fox - Hayes VA

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 4122

US Classification:

156245

Abstract:

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

US Patent:

54262348, Jun 20, 1995

Filed:

May 16, 1994

Appl. No.:

8/245171

Inventors:

Robert G. Bryant - Poquoson VA
Brian J. Jensen - Williamsburg VA
Paul M. Hergenrother - Yorktown VA

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

C07C 4976

US Classification:

568333

Abstract:

A composition of matter having the general structure: ##STR1## (wherein X is F, Cl, or NO. sub. 2, and Y is CO, SO. sub. 2 or C(CF. sub. 3). sub. 2) is employed to terminate a nucleophilic reagent, resulting in the exclusive production of phenylethynyl terminated reactive oligomers which display unique thermal characteristics. A reactive diluent having the general structure: ##STR2## (wherein R is any aliphatic or aromatic moiety) is employed to decrease the melt viscosity of a phenylethynyl terminated reactive oligomer and to subsequently react therewith to provide a thermosetting material of enhanced density. These materials have features which make them attractive candidates for use as composite matrices and adhesives.