Robert W Conn

US Patent:

6466520, Oct 15, 2002

Filed:

Feb 5, 1999

Appl. No.:

09/244753

Inventors:

Gil A. Speyer - Los Angeles CA
David L. Ferguson - Beaconfield, CA
Daniel Y. Chung - San Jose CA
Robert D. Patrie - Scotts Valley CA
Robert W. Wells - Cupertino CA
Robert O. Conn - Los Gatos CA

Assignee:

Xilinx, Inc. - San Jose CA

International Classification:

G04F 800

US Classification:

368118, 368120, 324617, 327265, 331 57

Abstract:

A circuit measures the signal propagation delay through a selected test circuit. The test circuit is provided with a feedback path so that the test circuit and feedback path together form a free-running oscillator. The oscillator then automatically provides its own test signal that includes alternating rising and falling signal transitions on the test-circuit input node. A phase discriminator samples the output of the oscillator and accumulates data representing the signal propagation delay of either rising or falling signal transitions propagating through the test circuit. The worst-case delay associated with the test circuit can then be expressed as the longer of the two. Knowing the precise worst-case delay allows IC designers to minimize the guard band and consequently guarantee higher speed performance.

US Patent:

6611477, Aug 26, 2003

Filed:

Apr 24, 2002

Appl. No.:

10/132419

Inventors:

Gil A. Speyer - Los Angeles CA
David L. Ferguson - Beaconsfield, CA
Daniel Y. Chung - Fremont CA
Robert D. Patrie - Scotts Valley CA
Robert W. Wells - Cupertino CA
Robert O. Conn - Los Gatos CA

Assignee:

Xilinx, Inc. - San Jose CA

International Classification:

G04F 800

US Classification:

368113, 368118, 368120, 324617, 324763, 324765, 714733

Abstract:

A circuit measures the signal propagation delay through a selected test circuit. The test circuit is provided with a feedback path so that the test circuit and feedback path together form a free-running oscillator. The oscillator then automatically provides its own test signal that includes alternating rising and falling signal transitions on the test-circuit input node. A phase discriminator samples the output of the oscillator and accumulates data representing the signal propagation delay of either rising or falling signal transitions propagating through the test circuit. The worst-case delay associated with the test circuit can then be expressed as the longer of the two. Knowing the precise worst-case delay allows IC A designers to minimize the guard band and consequently guarantee higher speed performance.

US Patent:

49902296, Feb 5, 1991

Filed:

Jun 13, 1989

Appl. No.:

7/365533

Inventors:

Gregor Campbell - Glendale CA
Robert W. Conn - Los Angeles CA
Tatsuo Shoji - Nagoya, JP

Assignee:

Plasma & Materials Technologies, Inc. - Burbank CA

International Classification:

C23C 1435

US Classification:

20429806

Abstract:

The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13. 56 MHz along a magnetic field supplied by an external magnetic field generator (16. 17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

US Patent:

56561415, Aug 12, 1997

Filed:

Feb 20, 1996

Appl. No.:

8/607273

Inventors:

Hans-Georg Betz - Bruchkoebel, DE
Gregor A. Campbell - Glendale CA
Robert W. Conn - Los Angeles CA
Karl Matl - Kleinostheim, DE
Peter Sommerkamp - Hanau, DE
Alfons Zoeller - Bad Soden-Salmuenster, DE
Dan M. Goebel - Tarzana CA

Assignee:

Leybold Aktiengesellschaft - Hanau

International Classification:

C23C 1650

US Classification:

20429805

Abstract:

Apparatus for coating substrates 31, 31",. . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31". . . wherein this device for generating the plasma cloud 28 has an election emitter 11 and a downstream tubular anode 38, the anode has an inlet 10 for the process gas to ignite the plasma and, further, the device is provided with magnets 4, 7 for directing and guiding the plasma through the anode tube 38 into the process chamber 43 and including a device for generating atoms, molecules or clusters of the materials for producing a layer on the substrates 31, 31",. . . , preferably an electron beam evaporator 37 from which the evaporated or sputtered material 33 can be directly applied onto the substrates 31, 31". . . . A second plasma 60 is generated between the crucible 45 of the electron beam evaporator 37 and the anode tube 38 of the plasma source 29 by applying a potential difference between the plasma source 29 and the vacuum chamber 2.

US Patent:

48850705, Dec 5, 1989

Filed:

May 20, 1988

Appl. No.:

7/197040

Inventors:

Gregor A. Campbell - Glendale CA
Robert W. Conn - Los Angeles CA
Dan M. Goebel - Santa Monica CA
Rolf Adam - Hanau, DE
Hans Aichert - Hanau, DE
Hans Betz - Bruchkoebel, DE
Anton Dietrich - Wiesenfeld, DE
Gonde Dittmer - Burscheid, DE
Klaus Hartig - Ronneburg, DE
Friedrich Hass - Rodenbach, DE
Rainer Ludwig - Karlstein-Bettingen, DE
Max Mayr - Alzenau-Wasserlos, DE
Alfred Thelen - Wehrheim, DE

Assignee:

Leybold Aktiengesellschaft - Cologne

International Classification:

C23C 1446

US Classification:

20419211

Abstract:

An apparatus to apply materials to a substrate disposed in a vacuum chamber is disclosed. A separate generator chamber containing an electron emitter is connected to the vacuum chamber by a process chamber so that a plasma of controllable cross-sectional shape and large area is formed and guided by magnets toward a target system. Positive ions may be accelerated against the target by applying an adjustable negative voltage.

US Patent:

54290708, Jul 4, 1995

Filed:

Nov 20, 1992

Appl. No.:

7/979574

Inventors:

Gregor A. Campbell - Glendale CA
Robert W. Conn - Los Angeles CA
Dan Katz - Beverly Hills CA
N. William Parker - Fairfield CA
Alexis de Chambrier - Glendale CA

Assignee:

Plasma & Materials Technologies, Inc. - Chatsworth CA

International Classification:

C23C 1650
H01L 2100

US Classification:

118723R

Abstract:

Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. The plasma source may include a sapphire or alumina source tube for use with plasmas containing fluorine. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The inner and outer coils are wrapped with a thin sheet of conducting material to shield the coils from RF signal generated by the plasma source. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.

US Patent:

51222515, Jun 16, 1992

Filed:

Feb 4, 1991

Appl. No.:

7/650788

Inventors:

Gregor A. Campbell - Glendale CA
Robert W. Conn - Los Angeles CA
David C. Pearson - Los Angeles CA
Alexis P. deChambrier - Burbank CA
Tatsuo Shoji - Nagoya, JP

Assignee:

Plasma & Materials Technologies, Inc. - Burbank CA

International Classification:

H05H 146
C23C 1434
B01J 1912

US Classification:

20429806

Abstract:

A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an inert or reactive gas injected into the source chamber, excitation of the antenna with RF energy in the 5 to 30 MHz establishes the M=0 excitation mode or components of both the M=0 and M=1 modes. Low frequency whistler waves are created which generate a uniform and high density plasma and high plasma current. The plasma source thus defined is used in combination with process chamber configurations in which static shaped or time modulated magnetic fields enhance the distribution and uniformity of the plasma at a substrate to be etched, deposited or sputtered.

US Patent:

50910493, Feb 25, 1992

Filed:

Jun 29, 1990

Appl. No.:

7/545636

Inventors:

Gregor Campbell - Glendale CA
Robert W. Conn - Los Angeles CA
Tatsuo Shoji - Nagoya, JP

Assignee:

Plasma & Materials Technologies, Inc. - Burbank CA

International Classification:

B44C 122
B05D 306
C23C 1400

US Classification:

156643

Abstract:

The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13. 56 MHz along a magnetic field supplied by an external magnetic field generator (16. 17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).