Robert D Devries

US Patent:

6908674, Jun 21, 2005

Filed:

Mar 5, 2001

Appl. No.:

09/799192

Inventors:

Suresh Shankarappa Vagarali - Columbus OH, US
Thomas Richard Anthony - Schenectady NY, US
John Casey - Dublin, IE
Robert Charles DeVries - Burnt Hills NY, US
Stephen Lee Dole - Columbus OH, US
John William Lucek - Powell OH, US
Alan Cameron Smith - Dublin, IE
Biju Varghese - Worthington OH, US
Steven William Webb - Worthington OH, US

Assignee:

Diamond Innovations, Inc. - Worthington OH

International Classification:

B32B005/16

US Classification:

428402, 428406, 65 337, 65102, 65111

Abstract:

A jadeite material has a thickness in excess of about 1. 0 mm and CIELAB indices of L*>42, a*+6. The grain size of the jadeite material is less than about 30 microns and is an equiaxed grain structure. The jadeite material has an optical transmission peak between 500 and 565 nm with an I/Ioptical transmission ratio of over 40%. The first step in making the jadeite material is to wrap a glass block, convertible by HP/HT into jadeite and having a nominal composition of NaAlSiO, with a graphite or refractive metal sheet. The wrapped glass block is placed in an HP/HT apparatus, rapidly heated, and subjected therein to a pressure in excess of about 3 GPa and a temperature in excess of about 1000 C. for a time adequate to convert the glass block into jadeite. The jadeite material then is cooled and the pressure subsequently released.

US Patent:

42486068, Feb 3, 1981

Filed:

Aug 23, 1979

Appl. No.:

6/069205

Inventors:

Harold P. Bovenkerk - Worthington OH
Robert C. DeVries - Burnt Hills NY

Assignee:

General Electric Company - Worthington OH

International Classification:

B24D 302

US Classification:

51307

Abstract:

Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond; cubic boron nitride (CNB); and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50 Kbar at 1300. degree. C. to 85 Kbar at 1750. degree. C. They have applications in several fields, for example, wire drawing die blands, cutting tool blanks, and anvils for high pressure apparatus.