Robert A Ditizio

US Patent:

6360686, Mar 26, 2002

Filed:

Aug 24, 1999

Appl. No.:

09/382050

Inventors:

Stephen P. DeOrnellas - Petaluma CA
Robert A. Ditizio - Petaluma CA

Assignee:

Tegal Corporation - Petaluma CA

International Classification:

C23C 1600

US Classification:

118723E, 156345

Abstract:

A reactor includes a shield which prevents the deposition of materials along a line-of-sight path from a wafer toward and onto an electrode , or a window which couples an electrode to a reaction chamber of the reactor. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

US Patent:

6521081, Feb 18, 2003

Filed:

Jun 14, 2001

Appl. No.:

09/881425

Inventors:

Stephen P. DeOrnellas - Santa Rosa CA
Robert A. Ditizio - Petaluma CA

Assignee:

Tegal Corporation - Petaluma CA

International Classification:

C23C 1600

US Classification:

1563453, 15634547, 118723 E, 118504

Abstract:

A rotary transformer includes a resonant circuit and a coil drive circuit. The resonant circuit includes a resonating capacitor connected to a power MOS transistor, coupled across the primary coil of the transformer. The coil drive circuit includes a diode connected to a power MOS transistor coupled across the primary coil of the transformer. A microprocessor detects changes in the voltage across the primary coil. The resonant circuit is connected and disconnected from the transformer during a power transfer mode and a data transfer mode, respectively. During the power transfer mode, stored energy in the leakage inductance of the primary coil is used for power coupling, via the resonant circuit, instead of being dissipated as heat. The resonant circuit is disconnected from the rotary transformer during the data transfer mode to maximize bandwidth for two-way data transfer between the primary and secondary sides of the transformer. The transformer uses a synchronous mode of operation in which the power MOS transistor of the coil drive circuit is turned on when the voltage across the primary coil changes from a positive to a negative value during the power transfer mode.

US Patent:

7169623, Jan 30, 2007

Filed:

Sep 9, 2004

Appl. No.:

10/937660

Inventors:

Robert Ditizio - Petaluma CA, US

Assignee:

Tegal Corporation - Petaluma CA

International Classification:

H01L 21/00

US Classification:

438 3, 438 48, 438253

Abstract:

Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the vicinity of the tunnel junction layer which serves to electrically isolate the upper magnetic layer from the lower magnetic layer. The gas employed during plasma overetching excludes halogen containing species which results in highly selective etching of the magnetic layer vis-à-vis the alumina tunnel barrier layer. The introduction of oxygen in the gas may enhance the reproducibility of the overetch process. Finally, plasma treatment with He and Hfollowed by rinsing and baking subsequent to removal of the photoresist mask during the fabrication process enhances yield.

US Patent:

7645618, Jan 12, 2010

Filed:

Mar 14, 2007

Appl. No.:

11/724556

Inventors:

Robert Anthony Ditizio - Petaluma CA, US

Assignee:

Tegal Corporation - Petaluma CA

International Classification:

H01L 21/00

US Classification:

438 3, 438 48, 438 59, 257 71, 257E21208

Abstract:

The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.

US Patent:

7955870, Jun 7, 2011

Filed:

Sep 2, 2009

Appl. No.:

12/552664

Inventors:

Robert A. Ditizio - Petaluma CA, US

Assignee:

OEM Group Inc. - Gilbert AZ

International Classification:

H01L 21/00

US Classification:

438 3, 438 48, 438 59, 257 71, 257298

Abstract:

The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.

US Patent:

20060186496, Aug 24, 2006

Filed:

Apr 20, 2006

Appl. No.:

11/407524

Inventors:

Robert Ditizio - Petaluma CA, US

Assignee:

TEGAL CORPORATION - Petaluma CA

International Classification:

H01L 43/00

US Classification:

257421000

Abstract:

Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the vicinity of the tunnel junction layer which serves to electrically isolate the upper magnetic layer from the lower magnetic layer. The gas employed during plasma overetching excludes halogen containing species which results in highly selective etching of the magnetic layer vis-à-vis the alumina tunnel barrier layer. The introduction of oxygen in the gas may enhance the reproducibility of the overetch process. Finally, plasma treatment with He and Hfollowed by rinsing and baking subsequent to removal of the photoresist mask during the fabrication process enhances yield.

US Patent:

20070026626, Feb 1, 2007

Filed:

Jul 26, 2006

Appl. No.:

11/494368

Inventors:

Robert Ditizio - Petaluma CA, US
Steve Selbrede - Novato CA, US

International Classification:

H01L 21/20

US Classification:

438396000

Abstract:

The present invention discloses a fabrication process for integrated high dielectric constant capacitors for circuit decoupling. The top electrode is protected against the re-deposition of material from the bottom electrode during the patterning process of the bottom electrode, thus provides better capacitor yield against the shortage of top and bottom electrodes. The protection can be a sidewall spacer, or an extra hard mask protecting the sidewall of the top electrode. The dielectric for the decoupling capacitors is preferably novel high dielectric constant materials such as (BaCa)(TiZr)O(BCTZ). The used of novel BCTZ high dielectric constant materials requires compatible electrode or seed layer such as Au or NiV, plus a low power etching process to avoid material damage.

US Patent:

20100285237, Nov 11, 2010

Filed:

May 19, 2010

Appl. No.:

12/783431

Inventors:

Robert Anthony Ditizio - Petaluma CA, US
Tue Nguyen - Fremont CA, US
Tai Dung Nguyen - Fremont CA, US

Assignee:

TEGAL CORPORATION - Petaluma CA

International Classification:

H05H 1/00

US Classification:

427569, 977891

Abstract:

A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.