Robert W Hawthorne

US Patent:

20040081215, Apr 29, 2004

Filed:

Oct 28, 2002

Appl. No.:

10/283381

Inventors:

Ralph Johnson - Murphy TX, US
Klein Johnson - Orono MN, US
Jimmy Tatum - Plano TX, US
James Guenter - Garland TX, US
James Biard - Richardson TX, US
Robert Hawthorne - Garland TX, US

Assignee:

Honeywell International Inc.

International Classification:

H01S005/00
H01S003/08

US Classification:

372/045000, 372/096000

Abstract:

An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant, etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion and un-oxidized portion of these layers as well as reducing the oxidation of other aluminum bearing layers of the DBR.

US Patent:

20050190812, Sep 1, 2005

Filed:

Apr 29, 2005

Appl. No.:

11/119292

Inventors:

Ralph Johnson - Murphy TX, US
Klein Johnson - Orono MN, US
Jimmy Tatum - Plano TX, US
James Guenter - Garland TX, US
James Biard - Richardson TX, US
Robert Hawthorne - Garland TX, US

International Classification:

H01S003/08

US Classification:

372099000, 372046013

Abstract:

This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.

US Patent:

20060199282, Sep 7, 2006

Filed:

Mar 4, 2005

Appl. No.:

11/071940

Inventors:

James Guenter - Garland TX, US
Robert Hawthorne - Garland TX, US
Jose Aizpuru - Murphy TX, US

International Classification:

H01L 21/00

US Classification:

438003000

Abstract:

A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.