Robert A Kirchhoff

US Patent:

6613827, Sep 2, 2003

Filed:

Sep 10, 2001

Appl. No.:

09/950327

Inventors:

Richard A. Lundgard - Midland MI
James J. Jakubowski - Midland MI
Robert A. Kirchhoff - Midland MI
Werner A. Lidy - Shriesheim, DE

Assignee:

Dow Global Technologies Inc. - Midland MI

International Classification:

C08K 505

US Classification:

524386, 524487, 524500, 524502, 525404, 525412, 525539

Abstract:

The present invention provides a process for preparing a stable dispersion of a preformed polymer in a polyol in a single mixer. A preformed polymer is mixed under sufficient heat and shear to reduce its particle size to a desired size in the presence of a polyol. The present invention also provides stable dispersions of polymers in polyols and polyurethane formulations containing stable dispersions made by the process of the present invention.

US Patent:

6787580, Sep 7, 2004

Filed:

Sep 28, 2001

Appl. No.:

09/966632

Inventors:

Yohannes Chonde - Midland MI
Daniel Imeokparia - Midland MI
John B. Horstman - Midland MI
Robert A. Kirchhoff - Midland MI
Kyung W. Suh - Midland MI

Assignee:

Dow Global Technologies Inc. - Midland MI

International Classification:

C08J 900

US Classification:

521 60, 521 62, 521 82, 521 83, 521 86, 521 88, 521 97, 521 98, 521 99, 521100, 521110, 521112, 521114, 521116, 521122, 521130, 521131, 521134, 521138, 521139, 521143, 521146, 521147, 521149, 521155, 521170

Abstract:

Prepare a multimodal thermoplastic polymer foam having a distribution of large and small cells in a substantial absence of water by using a blowing agent stabilizer. Multimodal foams of the present invention have blowing agent stabilizer predominantly located proximate to large cells. The resulting multimodal foams have particular utility as thermal insulating materials.

US Patent:

7585785, Sep 8, 2009

Filed:

Jan 30, 2004

Appl. No.:

10/544415

Inventors:

Robert A. Kirchhoff - Midland MI, US
Jason Q. Niu - Midland MI, US
Yongfu Li - Midland MI, US
Kenneth L. Foster - Brighton MI, US

Assignee:

Dow Global Technologies - Midland MI

International Classification:

H01L 21/31

US Classification:

438780, 438421, 438781, 257632, 257E21573, 257E21581

Abstract:

A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate (such as bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate) and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene.

US Patent:

7598114, Oct 6, 2009

Filed:

Jan 30, 2004

Appl. No.:

10/544428

Inventors:

Robert A. Kirchhoff - Midland MI, US
Jason Q. Niu - Midland MI, US
Kenneth L. Foster - Brighton MI, US

International Classification:

H01L 51/40

US Classification:

438 99, 438 42, 438274, 438399, 257E25008

Abstract:

A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.

US Patent:

8150671, Apr 3, 2012

Filed:

Apr 30, 2009

Appl. No.:

12/432886

Inventors:

Juan M. Quezada - Lerma, MX
Robert F. Kirchhoff - Macomb MI, US
Robert A. De Stefano - Macomb MI, US

Assignee:

GM Global Technology Operations LLC - Detroit MI

International Classification:

G06F 17/50

US Classification:

703 13, 307 105, 307 106

Abstract:

A simulation tool includes a printed circuit board assembly or PCBA having a built-in USB communication port and a microcontroller. A host computer transmits user-selected configuration data to the microcontroller, which transforms the data into solid-state signals. These are provided to a power master module in an electrical bench or a test vehicle. A method of simulating a low-current ignition switch that is usable with the PMM includes transmitting user-selectable configuration data from a host computer to a PCBA having a microcontroller, transforming the configuration data into a set of solid-state signals simulating a desired set of power mode parameters, and transmitting the solid-state signals to the PMM to thereby simulate an operation of the low-current ignition switch.

US Patent:

20060264065, Nov 23, 2006

Filed:

Jan 30, 2004

Appl. No.:

10/544416

Inventors:

Ying So - Midland MI, US
Stephen Hahn - Midland MI, US
Robert Kirchhoff - Midland MI, US
Kenneth Foster - Brighton MI, US

International Classification:

H01L 23/58
H01L 21/31
H01L 21/469

US Classification:

438781000, 438785000, 257642000

Abstract:

A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of styrene or styrene derivative (such as alpha methyl styrene) and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of styrene or styrene derivative and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative.

US Patent:

20140058620, Feb 27, 2014

Filed:

Aug 27, 2012

Appl. No.:

13/595280

Inventors:

TIMOTHY D. JULSON - ROCHESTER HILLS MI, US
ROBERT F. KIRCHHOFF - MACOMB MI, US
GARY W. TARASKI - OXFORD MI, US

Assignee:

GM GLOBAL TECHNOLOGY OPERATIONS LLC - DETROIT MI

International Classification:

G01R 31/02
G06F 7/00

US Classification:

701 327, 324503

Abstract:

Methods and systems are provided for analyzing a fault in a communication system. The system includes a diagnostic module. The diagnostic module has first through fifth control logics. The first control logic is configured to determine a topology of the communication system. The second control logic is configured to request a response from at least one module that is in electronic communication with the communication system. The third control logic is configured to receive the response. The fourth control logic is configured to analyze a characteristic of the response. The fifth control logic is configured to determine a characteristic of the fault based on the characteristic of the response.

US Patent:

47958278, Jan 3, 1989

Filed:

Oct 16, 1987

Appl. No.:

7/109136

Inventors:

Kenneth J. Bruza - Midland MI
Robert A. Kirchhoff - Midland MI

Assignee:

The Dow Chemical Company - Midland MI

International Classification:

C08F13208
C08F23208

US Classification:

564329

Abstract:

The invention comprises cyclobutarene ketoaniline monomers and the process for preparing them. The monomers can be used to graft and/or endcap a monomer or polymer having at least 1 amino-reactive functionality. The grafted and/or endcapped monomer or polymer can subsequently be processed to prepare a highly crosslinked network. The preferred monomer has the formula: ##STR1##.