Robert John Knoll

US Patent:

20020079032, Jun 27, 2002

Filed:

Dec 21, 2000

Appl. No.:

09/746097

Inventors:

Robert Knoll - Sherman Oaks CA, US

International Classification:

B65D065/02

US Classification:

150/154000, 206/006100

Abstract:

A chemiluminescent device cover () having a hollow envelope () which has a translucent envelope outer layer (C) manufactured from a fluorescing material and a perforated envelope inner layer (D) securely attached to the envelope outer layer (C). The fluorescing outer layer (C) functions to receive light emanating through the perforations in the envelope inner layer (D) from a chemiluminescent within the envelope () and re-emanate the light therefrom.

US Patent:

50615742, Oct 29, 1991

Filed:

Nov 28, 1989

Appl. No.:

7/443454

Inventors:

Charles H. Henager - Kennewick WA
Robert W. Knoll - Menomonee Falls WI

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

C22C 1434
B05D 306

US Classification:

428620

Abstract:

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

US Patent:

51569094, Oct 20, 1992

Filed:

Nov 28, 1989

Appl. No.:

7/445794

Inventors:

Charles H. Henager - Kennewick WA
Robert W. Knoll - Menomonee Falls WI

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

B32B 516

US Classification:

428334

Abstract:

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500. degree. C. or less.