Robert J Knoll

US Patent:

50615742, Oct 29, 1991

Filed:

Nov 28, 1989

Appl. No.:

7/443454

Inventors:

Charles H. Henager - Kennewick WA
Robert W. Knoll - Menomonee Falls WI

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

C22C 1434
B05D 306

US Classification:

428620

Abstract:

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

US Patent:

50324691, Jul 16, 1991

Filed:

Dec 20, 1989

Appl. No.:

7/532751

Inventors:

Martin D. Merz - Richland WA
Robert W. Knoll - Kennewick WA

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

B05D 108
B05D 102

US Classification:

428662

Abstract:

A method of coating a substrate comprises plasma spraying a prealloyed feed powder onto a substrate, where the prealloyed feed powder comprises a significant amount of an alloy of stainless steel and at least one refractory element selected from the group consisting of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The plasma spraying of such a feed powder is conducted in an oxygen containing atmosphere and forms an adherent, corrosion resistant, and substantially homogenous metallic refractory alloy coating on the substrate.

US Patent:

51569094, Oct 20, 1992

Filed:

Nov 28, 1989

Appl. No.:

7/445794

Inventors:

Charles H. Henager - Kennewick WA
Robert W. Knoll - Menomonee Falls WI

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

B32B 516

US Classification:

428334

Abstract:

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500. degree. C. or less.