Robert R Ridgeway

US Patent:

20100180913, Jul 22, 2010

Filed:

Dec 5, 2008

Appl. No.:

12/602740

Inventors:

Chantal Arena - Mesa AZ, US
Christiaan J. Werkhoven - Gilbert AZ, US
Andrew D. Johnson - Doylestown PA, US
Vasil Vorsa - Coopersburg PA, US
Robert Gordon Ridgeway - Quakertown PA, US
Peter J. Maroulis - Alburtis PA, US

International Classification:

C23G 1/00
B05C 11/00

US Classification:

134 2, 118712

Abstract:

The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and apparatus for in-situ removal of undesired deposits in the interiors of reactor chambers, for example, on chamber walls and elsewhere. The invention provides methods according to which cleaning steps are integrated and incorporated into a high-throughput growth process. Preferably, the times when growth should be suspended and cleaning commenced and when cleaning should be terminated and growth resumed are automatically determined based on sensor inputs. The invention also provides reactor chamber systems for the efficient performance of the integrated cleaning/growth methods of this invention.

US Patent:

20220349049, Nov 3, 2022

Filed:

Jun 19, 2020

Appl. No.:

17/621198

Inventors:

- TEMPLE AZ, US
ROBERT G. RIDGEWAY - CHANDLER AZ, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

C23C 16/36
C23C 16/511
C23C 16/56
C23C 16/455
H01L 21/02

Abstract:

Compositions and methods using same are used for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. The silicon-containing film is deposited using an alkylhydridosilane compound containing at least one Si—H bond.

US Patent:

20220301862, Sep 22, 2022

Filed:

Sep 10, 2020

Appl. No.:

17/642185

Inventors:

- TEMPE AZ, US
WILLIAM ROBERT ENTLEY - GILBERT AZ, US
DANIEL P. SPENCE - CARLSBAD CA, US
RAYMOND NICHOLAS VRTIS - CARLSBAD CA, US
JENNIFER LYNN ANNE ACHTYL - CHANDLER AZ, US
ROBERT GORDON RIDGEWAY - CHANDLER AZ, US
XINJIAN LEI - VISTA CA, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

H01L 21/02
C23C 16/40
C23C 16/513

Abstract:

A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel monoalkoxysilane; and applying energy to the gaseous composition comprising a novel monoalkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising a novel monoalkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.80 to about 3.30, an elastic modulus of from about 9 to about 32 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.

US Patent:

20220293417, Sep 15, 2022

Filed:

Aug 14, 2020

Appl. No.:

17/635984

Inventors:

- TEMPE AZ, US
SURESH K. RAJARAMAN - TAIPEI, TW
WILLIAM ROBERT ENTLEY - GILBERT AZ, US
JENNIFER LYNN ANNE ACHTYL - CHANDLER AZ, US
ROBERT GORDON RIDGEWAY - CHANDLER AZ, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

H01L 21/02
C23C 16/42
C23C 16/56

Abstract:

A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the formula RHSi as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.

US Patent:

20220267642, Aug 25, 2022

Filed:

Jul 24, 2020

Appl. No.:

17/629698

Inventors:

- TEMPE AZ, US
ROBERT G. RIDGEWAY - CHANDLER AZ, US
XINJIAN LEI - VISTA CA, US
MING LI - SAN MARCOS CA, US
MANCHAO XIAO - SAN DIEGO CA, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

C09D 183/16
C08G 77/50
C23C 16/50
C23C 16/56
C23C 16/32
C23C 16/34
C23C 16/30

Abstract:

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.

US Patent:

20230103933, Apr 6, 2023

Filed:

Mar 29, 2021

Appl. No.:

17/907236

Inventors:

- TEMPE AZ, US
ENTLEY WILLIAM ROBERT - GILBERT AZ, US
DANIEL P. SPENCE - CARLSBAD CA, US
RAYMOND NICHOLAS VRTIS - CARLSBAD CA, US
JENNIFER LYNN ANNE ACHTYL - CHANDLER AZ, US
ROBERT GORDON RIDGEWAY - CHANDLER AZ, US
XINJIAN LEI - VISTA CA, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

H01L 21/02
B05D 1/00
C07F 7/18

Abstract:

A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from 2.70 to 3.50, an elastic modulus of from 6 to 36 GPa, and an at. % carbon from 10 to 36 as measured by XPS.

US Patent:

20210339280, Nov 4, 2021

Filed:

Jul 8, 2021

Appl. No.:

17/370957

Inventors:

- Tempe AZ, US
Robert Gordon Ridgeway - Chandler AZ, US
Raymond Nicholas Vrtis - Carlsbad CA, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

B05D 1/00
C23C 16/56
H01L 21/02
C23C 16/30
H01B 3/46
B05D 3/02
B05D 3/06
C23C 16/50

Abstract:

A method and composition for producing a porous low k dielectric film via chemical vapor deposition includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an silacyclic compound, and with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.0 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

US Patent:

20210140040, May 13, 2021

Filed:

Oct 30, 2020

Appl. No.:

17/085793

Inventors:

- Tempe AZ, US
XINJIAN LEI - TEMPE AZ, US
ROBERT G. RIDGEWAY - TEMPE AZ, US
RAYMOND N. VRTIS - TEMPE AZ, US
MANCHAO XIAO - TEMPE AZ, US
RICHARD HO - TEMPE AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C23C 16/34
C07F 7/10
C07F 7/18
C23C 16/04
C23C 16/50
C23C 16/36
C23C 16/40

Abstract:

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.