Robert L Robison

age ~71

from Schenectady, NY

Also known as:
  • Robert I Robison
  • Robert L Robinson
  • Robert Obinson

Robert Robison Phones & Addresses

  • Schenectady, NY
  • Pattersonville, NY
  • Syracuse, NY
  • Pattersonvle, NY
  • 3078 Westside Ave, Schenectady, NY 12306

Work

  • Position:
    Executive, Administrative, and Managerial Occupations

Education

  • Degree:
    High school graduate or higher

Resumes

Robert Robison Photo 1

Vice President At U.s. Bank

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Location:
United States
Robert Robison Photo 2

Principle At R&R Industries, Llc.

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Position:
Principle at R&R Industries, LLC., President at R&R Industries, LLC
Location:
Temple, Texas
Industry:
Construction
Work:
R&R Industries, LLC. since Nov 2006
Principle

R&R Industries, LLC - Temple since Jan 2006
President
Robert Robison Photo 3

Robert Robison

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Robert Robison Photo 4

Robert Robison

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Robert Robison Photo 5

Owner

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Work:
Relion Marketing.inc
Owner
Robert Robison Photo 6

Robert Robison

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Robert Robison Photo 7

Robert Robison

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Medicine Doctors

Robert Robison Photo 8

Robert J. Robison

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Specialties:
Congenital Cardiac Surgery (Thoracic Surgery)
Work:
St Vincent Medical GroupSt Vincents Medical Group
8433 Harcourt Rd STE 100, Indianapolis, IN 46260
3175837600 (phone), 3175837601 (fax)
Education:
Medical School
Indiana University School of Medicine
Graduated: 1979
Procedures:
Coronary Artery Bypass
Pacemaker and Defibrillator Procedures
Septal Defect Repair
Heart Valve Procedures
Heart/Lung Transplant
Thoracic Aortic Aneurysm Repair
Thoracoscopy
Conditions:
Congenital Anomalies of the Heart
Lung Cancer
Languages:
English
Spanish
Description:
Dr. Robison graduated from the Indiana University School of Medicine in 1979. He works in Indianapolis, IN and specializes in Congenital Cardiac Surgery (Thoracic Surgery). Dr. Robison is affiliated with St Vincent Carmel Hospital and St Vincent Indianapolis Hospital & Heart Center.
Robert Robison Photo 9

Robert Nelson Robison

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Specialties:
Family Medicine
Education:
University of Maryland(1977)

License Records

Robert J Robison

License #:
MT017481T - Expired
Category:
Medicine
Type:
Graduate Medical Trainee

Robert J Robison

License #:
RS076832A - Expired
Category:
Real Estate Commission
Type:
Real Estate Salesperson-Standard

Robert N Robison

License #:
MT001478T - Expired
Category:
Medicine
Type:
Graduate Medical Trainee

Lawyers & Attorneys

Robert Robison Photo 10

Robert Robison - Lawyer

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Office:
Watson, Blanche, Wilson & Posner
Specialties:
Medical Malpractice Defense
Health Care law
Insurance Defense
Business Law
Probate
Elder Law
ISLN:
911281086
Admitted:
1996
University:
Louisiana State University, B.S., 1985; Louisiana State University, M.S., 1986
Law School:
Louisiana State University, J.D., 1996
Robert Robison Photo 11

Robert Robison - Lawyer

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Office:
Morgan, Lewis & Bockius LLP
Specialties:
Life Sciences
Financial Services
Technology
Retail & eCommerce
Mergers & Acquisitions
International Law
Investment Management
Securities / Investment Fraud
Private Equity
Corporate, Finance & Investment Management
Life Sciences Transactions
ISLN:
902079142
Admitted:
1978
University:
Stanford University, B.A., 1974
Law School:
University of Chicago Law School, J.D., 1977

Us Patents

  • Band Gap Modulated Optical Sensor

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  • US Patent:
    7888266, Feb 15, 2011
  • Filed:
    Jun 26, 2008
  • Appl. No.:
    12/146560
  • Inventors:
    Kangguo Cheng - Guilderland NY, US
    Toshiharu Furukawa - Essex Junction VT, US
    Robert Robison - Colchester VT, US
    William R. Tonti - Essex Junction VT, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/311
  • US Classification:
    438700, 438199, 438508, 438 70, 257E21051, 257E21054, 257E21058, 257E21085, 257E21092, 257E21126, 257E21127, 257E21231, 257E21267, 257E2132, 257E21304, 257E21435, 257E27133, 257E27134
  • Abstract:
    A complementary metal-oxide-semiconductor (CMOS) optical sensor structure includes a pixel containing a charge collection well of a same semiconductor material as a semiconductor layer in a semiconductor substrate and at least another pixel containing another charge collection well of a different semiconductor material than the material of the semiconductor layer. The charge collections wells have different band gaps, and consequently, generate charge carriers in response to light having different wavelengths. The CMOS sensor structure thus includes at least two pixels responding to light of different wavelengths, enabling wavelength-sensitive, or color-sensitive, capture of an optical data.
  • Semispherical Integrated Circuit Structures

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  • US Patent:
    7986022, Jul 26, 2011
  • Filed:
    Nov 19, 2009
  • Appl. No.:
    12/621956
  • Inventors:
    Kangguo Cheng - Guilderland NY, US
    Toshiharu Furukawa - Essex Junction VT, US
    Robert R. Robison - Colchester VT, US
    William R. Tonti - Essex Junction VT, US
    Richard Q. Williams - Essex Junction VT, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 31/105
  • US Classification:
    257458, 257E31061
  • Abstract:
    A diode comprises a substrate formed of a first material having a first doping polarity. The substrate has a planar surface and at least one semispherical structure extending from the planar surface. The semispherical structure is formed of the first material. A layer of second material is over the semispherical structure. The second material comprises a second doping polarity opposite the first doping polarity. The layer of second material conforms to the shape of the semispherical structure. A first electrical contact is connected to the substrate, and a second electrical contact is connected to the layer of second material. Additional semiconductor structures are formed by fabricating additional layers over the original layers.
  • Band Gap Modulated Optical Sensor

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  • US Patent:
    8008696, Aug 30, 2011
  • Filed:
    Jun 26, 2008
  • Appl. No.:
    12/146575
  • Inventors:
    Kangguo Cheng - Guilderland NY, US
    Toshiharu Furukawa - Essex Junction VT, US
    Robert Robison - Colchester VT, US
    William R. Tonti - Essex Junction VT, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 29/72
  • US Classification:
    257292, 257401, 257187, 257E27133, 257E21051, 257E21126, 438700, 438199
  • Abstract:
    A complementary metal-oxide-semiconductor (CMOS) optical sensor structure comprises a pixel containing a charge collection well of a same semiconductor material as a semiconductor layer in a semiconductor substrate and at least another pixel containing another charge collection well of a different semiconductor material than the material of the semiconductor layer. The charge collections wells have different band gaps, and consequently, generate charge carriers in response to light having different wavelengths. The CMOS sensor structure thus includes at least two pixels responding to light of different wavelengths, enabling wavelength-sensitive, or color-sensitive, capture of an optical data. Further, a design structure for the inventive complementary metal-oxide-semiconductor (CMOS) image sensor is also provided.
  • Creating Extremely Thin Semiconductor-On-Insulator (Etsoi) Having Substantially Uniform Thickness

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  • US Patent:
    20110095393, Apr 28, 2011
  • Filed:
    Oct 22, 2009
  • Appl. No.:
    12/603668
  • Inventors:
    Nathaniel C. Berliner - Albany NY, US
    Kangguo Cheng - Albany NY, US
    Jason E. Cummings - Albany NY, US
    Toshiharu Furukawa - Essex Junction VT, US
    Jed H. Rankin - Essex Junction VT, US
    Robert R. Robison - Essex Junction VT, US
    William R. Tonti - Essex Junction VT, US
  • Assignee:
    INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
  • International Classification:
    H01L 29/06
    H01L 21/66
    C23F 1/08
  • US Classification:
    257506, 438 16, 15634513, 257E21529, 257E29006
  • Abstract:
    An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a wafer; determining a removal thickness to be removed at each of the plurality of selected points such that removal of the removal thickness results in a substantially uniform within-wafer semiconductor layer thickness; implanting a species into the wafer at each of the plurality of selected points with at least one of a dose level and an energy level based on the removal thickness for the respective point; and polishing the semiconductor layer to thin the semiconductor layer.
  • Single-Mask Alternating Line Deposition

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  • US Patent:
    20220359394, Nov 10, 2022
  • Filed:
    Jul 26, 2022
  • Appl. No.:
    17/873888
  • Inventors:
    - Armonk NY, US
    Lawrence A. Clevenger - Saratoga Springs NY, US
    Christopher J. Penny - Saratoga Springs NY, US
    Kisik Choi - Watervliet NY, US
    Nicholas Anthony Lanzillo - Wynantskill NY, US
    Robert Robison - Rexford NY, US
  • International Classification:
    H01L 23/528
    H01L 21/768
  • Abstract:
    Integrated chips include first lines, formed on an underlying substrate. Spacers are formed conformally on sidewalls of the plurality of lines. Etch stop remnants are positioned on the sidewalls of the plurality of lines, between the spacers and the underlying substrate. Second lines are formed on the underlying substrate, between respective pairs of adjacent first lines.
  • Top Via On Subtractively Etched Conductive Line

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  • US Patent:
    20220223473, Jul 14, 2022
  • Filed:
    Mar 1, 2022
  • Appl. No.:
    17/683579
  • Inventors:
    - Armonk NY, US
    Lawrence A. Clevenger - Saratoga Springs NY, US
    Kisik Choi - Watervliet NY, US
    Nicholas Anthony Lanzillo - Wynantskill NY, US
    Christopher J. Penny - Saratoga Springs NY, US
    Robert Robison - Rexford NY, US
  • International Classification:
    H01L 21/768
    H01L 21/02
    H01L 21/04
    H01L 21/3105
  • Abstract:
    A method for fabricating a semiconductor device including a self-aligned top via includes subtractively etching a conductive layer to form at least a first conductive line on a substrate. After the subtractive etching, the method further includes forming a barrier layer along the substate and along the first conductive line, planarizing at least portions of the barrier layer to obtain at least an exposed first conductive line, recessing at least the exposed first conductive line to form a first recessed conductive line, and forming conductive material in a via opening on the first recessed conductive line.
  • High Aspect Ratio Vias For Integrated Circuits

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  • US Patent:
    20220199521, Jun 23, 2022
  • Filed:
    Dec 22, 2020
  • Appl. No.:
    17/129971
  • Inventors:
    - Armonk NY, US
    Somnath Ghosh - Clifton Park NY, US
    Lawrence A. Clevenger - Saratoga Springs NY, US
    Robert Robison - Rexford NY, US
  • International Classification:
    H01L 23/522
    H01L 23/528
    H01L 23/532
  • Abstract:
    An interlayer interconnect for an integrated circuit includes a first line in a first wiring layer, a first via portion integral to and extending from the first line, and a second line in a second wiring layer that is adjacent to the first wiring layer. The interlayer interconnect also includes a third line in the second wiring layer that is a first distance from the second line, wherein the first distance is a pitch of the second wiring layer, and a second via portion integral to and extending from the second line and in electrical contact with the first via portion at an interface to form a via. The via extends a second distance that is at least one-and-a-quarter times the pitch.
  • Conductive Lines With Subtractive Cuts

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  • US Patent:
    20220181255, Jun 9, 2022
  • Filed:
    Feb 24, 2022
  • Appl. No.:
    17/679719
  • Inventors:
    - Armonk NY, US
    Lawrence A. Clevenger - Saratoga Springs NY, US
    Kisik Choi - Watervliet NY, US
    Nicholas Anthony Lanzillo - Wynantskill NY, US
    Christopher J. Penny - Saratoga Springs NY, US
    Robert Robison - Rexford NY, US
  • International Classification:
    H01L 23/522
    H01L 21/768
    H01L 23/528
    H01L 21/311
  • Abstract:
    Integrated chips include a dielectric layer that includes at least one trench and at least one plug region. A line is formed in the dielectric layer in the at least one trench and terminates at the plug region. A dielectric plug is formed in the plug region.

Flickr

Plaxo

Robert Robison Photo 20

Robert Robison

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Professor & Chair at Austin Peay State University Conservative
Robert Robison Photo 21

Robert Robison

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Brasfield Gorrie General Contractor

Facebook

Robert Robison Photo 22

Robert Robison

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Robert Robison Photo 23

Robert Robison

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Robert Robison Photo 24

Robert Robison

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Robert Robison Photo 25

Robert Lee Robison

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Robert Robison Photo 26

Robert Robison

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Robert Robison Photo 27

Robert Robison Sr.

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Robert Robison Photo 28

Robert Robison

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Robert Robison Photo 29

Robert Cannon Robison

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Myspace

Robert Robison Photo 30

Robert Robison

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Locality:
In the stix, Pennsylvania
Gender:
Male
Birthday:
1943
Robert Robison Photo 31

Robert Robison

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Locality:
COLEMAN, MICHIGAN
Gender:
Male
Birthday:
1947
Robert Robison Photo 32

Robert Robison

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Locality:
Chillicothe, Ohio
Gender:
Male
Birthday:
1942
Robert Robison Photo 33

Robert Robison

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Locality:
SPOKANE, Washington
Gender:
Male
Birthday:
1951
Robert Robison Photo 34

Robert Robison

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Locality:
taft, California
Gender:
Male
Birthday:
1931
Robert Robison Photo 35

Robert Robison

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Locality:
SACRAMENTO, California
Gender:
Male
Birthday:
1939

Classmates

Robert Robison Photo 36

Robert Robison

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Schools:
Central Catholic High School South Bend IN 1948-1952
Community:
Warren Pat, Robert Prue
Robert Robison Photo 37

Robert Robison

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Schools:
Ashboro High School Ashboro IN 1939-1943
Community:
William Littlejohn, John Moss, Bob Robison, Barbara Taylor, Carroll Minor, Norma Campbell
Robert Robison Photo 38

Robert Robison

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Schools:
North Central High School Pioneer OH 1959-1963
Community:
Charlotte Rainwater
Robert Robison Photo 39

Robert Robison

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Schools:
Greeneview High School Jamestown OH 1956-1960
Community:
Janet Webster, Phyllis Johnson, Steve Cornell, Keri Harlow
Robert Robison Photo 40

Robert Robison

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Schools:
Bushnell-Prairie City High School Bushnell IL 1968-1972
Community:
Tina Mack, Connie Becker
Robert Robison Photo 41

Robert Robison

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Schools:
Ft. Defiance High School Ft. Defiance VA 1994-1998
Community:
Terrian Ellinger, Jane Valliere
Robert Robison Photo 42

Robert Robison

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Schools:
Normandy Elementary School Littleton CO 1972-1979, Euclid Middle School Littleton CO 1979-1981, John Wesley Powell Middle School Littleton CO 1981-1981
Community:
Tami Stork
Robert Robison Photo 43

Robert Robison

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Schools:
Robertson Intermediate School Daly City CA 1971-1975
Community:
Joan Rash, Essex Combong, Lisa Yee, Tina Almadova

Googleplus

Robert Robison Photo 44

Robert Robison

Work:
Embry-Riddle Aeronautical University - Training Manager
Education:
Embry-Riddle Aeronautical University, Prescott Campus - Aeronautical Science, University High School
Robert Robison Photo 45

Robert Robison

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Robert Robison

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Robert Robison

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Robert Robison

Robert Robison Photo 49

Robert Robison

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Robert Robison

Robert Robison Photo 51

Robert Robison

Youtube

Robbie Robertson - Somewhere Down The Crazy R...

Music video by Robbie Robertson performing Somewhere Down The Crazy Ri...

  • Duration:
    4m 52s

Swing Low, Sweet Chariot: Sung by Robert Robi...

A performance of Swing Low, Sweet Chariot by the son of a preacher, Ro...

  • Duration:
    3m 11s

He Lives in You featuring Robert Robinson

On April 9, 2011 troubadour Larry Long celebrated the release of his l...

  • Duration:
    6m 47s

Robert Robinson Change Is Gonna Come

Robert Robinson performed Sam Cook's "Change is Gonna Come" for St. Jo...

  • Duration:
    4m 19s

Robert Robison

Singing Honky Tonk Man for the Habitat For Humanity Karaoke Contest.

  • Duration:
    2m 42s

Robert Robison Tribute Video

Robert Robison 19242018.

  • Duration:
    6m 55s

Get Report for Robert L Robison from Schenectady, NY, age ~71
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