Robert C Rodriquez

US Patent:

20170054097, Feb 23, 2017

Filed:

Aug 15, 2016

Appl. No.:

15/237447

Inventors:

- Colorado Springs CO, US
Byung-Kyu Park - Colorado Springs CO, US
Robert Rodriquez - Colorado Springs CO, US

International Classification:

H01L 51/42
H01L 27/30
H01L 51/44

Abstract:

A method of manufacturing an image sensor device includes providing a metalized thin film transistor layer on a glass substrate; forming an inter-layer dielectric layer on the metalized thin film transistor layer: forming a via through the inter-layer dielectric layer; forming a metal layer the inter-layer dielectric and within the inter-layer dielectric layer via for contacting the metalized thin film transistor layer; forming a bank layer on the metal layer and the inter-layer dielectric layer: forming a via through the bank layer; forming an electron transport layer on the bank layer and within the bank layer via for contacting an upper surface of the metal layer; forming a bulk heterojunction layer on the electron transport layer; forming a hole transport layer on the bulk heterojunction layer; and forming a top contact layer on the hole transport layer.