Robert M Small

US Patent:

7037350, May 2, 2006

Filed:

Jul 14, 2003

Appl. No.:

10/619901

Inventors:

Robert J. Small - Tucson AZ, US
Zhefei J. Chen - Los Altos CA, US

Assignee:

DA NanoMaterials L.L.C. - Tempe AZ

International Classification:

B24B 1/00
C08F 8/32

US Classification:

51298, 106 3, 438692, 438693, 216100, 216102, 216103, 216105, 216106, 524556, 524557, 524379, 524387

Abstract:

A composition for chemical-mechanical polishing, comprising an aqueous solution and an abrasive that comprises polymer particles, is described. The polymer particles carry an electrical charge, such that nearby particles repel one another. Accordingly, aggregation of polymer particles may be reduced, minimized or eliminated. The composition may additionally comprise an oxidizing agent. A method of using the composition to polish a substrate surface, such as a substrate surface having a metal surface feature or layer, is also described. A substrate so polished may exhibit good surface characteristics, such as a relatively smooth surface or a reduced number of, or a lack of, microscratches on the surface of the substrate.

US Patent:

7368388, May 6, 2008

Filed:

Apr 15, 2005

Appl. No.:

11/106490

Inventors:

Robert J. Small - Tucson AZ, US
Christopher G Hayden - Alexandria VA, US

International Classification:

H01L 21/302

US Classification:

438692, 438691, 438693, 252 791

Abstract:

The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of solid cerium-containing phases selected from CeO, CeO, cerium-nitride material, cerium-fluoride material, and cerium-sulfide material, where different cerium-containing materials are present in different particles or on the same particles.

US Patent:

7427361, Sep 23, 2008

Filed:

Oct 23, 2003

Appl. No.:

10/690626

Inventors:

Robert J. Small - Tucson AZ, US
Donald William Frey - Pleasanton CA, US
Bruce Tredinnick - Surprise AZ, US
Christopher G. Hayden - Alexandria VA, US

Assignee:

DuPont Air Products NanoMaterials LLC - Tempe AZ

International Classification:

C09K 13/00

US Classification:

252 791, 438692

Abstract:

The invention generally relates to compositions and methods for chemically mechanically polishing a substrate, including a polishing accelerator, which is normally one or more oxidizers, an abrasive material, and chelating particles and/or metal-absorbent clay material. In addition, the invention can also involve methods of forming chelator particles and methods of separating metal-containing ions from polishing and/or etching solutions after polishing and/or etching.

US Patent:

7923424, Apr 12, 2011

Filed:

Feb 10, 2006

Appl. No.:

11/350758

Inventors:

Robert J. Small - Tucson AZ, US

Assignee:

Advanced Process Technologies, LLC - Tucson AZ

International Classification:

C11D 7/08
B08B 3/08

US Classification:

510175, 510176, 510177, 510178, 134 13, 134 42, 134902, 438906

Abstract:

A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.

US Patent:

7968465, Jun 28, 2011

Filed:

Aug 12, 2004

Appl. No.:

10/568077

Inventors:

Robert J. Small - Tucson AZ, US
Haruki Nojo - Kanagawa-ken, JP
Kenichi Orui - Atsugi, JP
Steve Masami Aragaki - Kawasaki, JP
Atsushi Hayashida - Yokohama, JP

Assignee:

DuPont Air Products NanoMaterials LLC - Allentown PA

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438692, 438689, 438693

Abstract:

A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0. 0005 to about 1 moles/kilogram of periodic acid, from about 0. 2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2. 5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

US Patent:

20040217006, Nov 4, 2004

Filed:

Mar 18, 2004

Appl. No.:

10/802780

Inventors:

Robert Small - Tucson AZ, US

International Classification:

C25D021/06

US Classification:

205/098000

Abstract:

The present invention relates to a method of modifying a surface. The method may include introducing a liquid to a first cluster generation site. The liquid includes an oxidizing agent, such as hydroxylamine. The liquid is subjected to electrical forces higher than a surface tension of said liquid to prepare a first plurality of clusters. Clusters of the first plurality of clusters are impacted upon the surface.

US Patent:

20060183654, Aug 17, 2006

Filed:

Feb 10, 2006

Appl. No.:

11/350757

Inventors:

Robert Small - Tucson AZ, US

International Classification:

C11D 11/00

US Classification:

510165000

Abstract:

A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising an ionic liquid. The semiconductor substrate may be a wafer.

US Patent:

20060289034, Dec 28, 2006

Filed:

Jun 28, 2006

Appl. No.:

11/476090

Inventors:

Robert Small - Tucson AZ, US
Christopher Hayden - Alexandria VA, US

International Classification:

B08B 6/00
H01L 21/461
B44C 1/22

US Classification:

134001300, 438745000, 216083000, 134002000

Abstract:

The invention relates to a method of cleaning the surface of a substrate to remove post-etch residue or post chemical mechanical polishing residues from the surface of a substrate. Specifically, the present invention relates to a method of post-CMP or post-etch cleaning. The method involves contacting the surface of a substrate with a CMP composition or an etching composition, that contains free radicals, and subsequently contacting the surface of the substrate with a composition that comprises a free radical quencher.