Robert Allen Weaver

US Patent:

6370791, Apr 16, 2002

Filed:

Mar 10, 2000

Appl. No.:

09/522797

Inventors:

Robert Weaver - Kalispell MT
Ronald Schlagenhauser - Kalispell MT

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

F26B 1724

US Classification:

34 58, 34109, 414941

Abstract:

In a machine for processing semiconductor wafers, a rotor includes two pairs of combs. A lock down mechanism has a lock bar, temporarily engaged and moved by a loading/unloading robot, drives a retainer against the edges of the wafers, to better hold them in place during processing. Contamination via generation of particles is reduced. Combs on the rotor have a resilient strip. The lower edges of the wafers compress slightly into or deflect the resilient strip, when urged into place by the lock down mechanism.

US Patent:

6471913, Oct 29, 2002

Filed:

Feb 9, 2000

Appl. No.:

09/501002

Inventors:

Robert A. Weaver - Whitefish MT
Paul R. McHugh - Kalispell MT
Gregory J. Wilson - Kalispell MT

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C21D 106

US Classification:

266256, 266252, 118725

Abstract:

An apparatus for thermally processing a microelectronic workpiece is set forth. The apparatus comprises a first assembly and a second assembly, disposed opposite one another, with an actuator disposed to provide relative movement between the first assembly and second assembly. More particularly, the actuator provides relative movement between at least a loading position in which the first assembly is in a state for loading or unloading of the microelectronic workpiece, and a thermal processing position in which the first assembly and second assembly are proximate one another and form a thermal processing chamber. A thermal transfer unit is disposed in the second assembly and has a workpiece support surface that is heated and cooled in a controlled manner. As the first assembly and second assembly are driven to the thermal processing position by the actuator, an arrangement of elements bring a surface of the microelectronic workpiece into direct physical contact with the workpiece support surface of the thermal transfer unit. In a preferred embodiment, the thermal transfer unit is comprised of a low thermal mass heater and a high thermal mass cooler disposed to controllably cool the low thermal mass heater.

US Patent:

6565729, May 20, 2003

Filed:

Dec 7, 2000

Appl. No.:

09/732513

Inventors:

Linlin Chen - Plano TX
Gregory J. Wilson - Kalispell MT
Paul R. McHugh - Kalispell MT
Robert A. Weaver - Whitefish MT
Thomas L. Ritzdorf - Big Fork MT

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C25D 2112

US Classification:

205 82, 205 96, 205 97, 205123, 205133, 204DIG 7, 42725518, 42725522, 4274301, 4274431, 438758

Abstract:

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

US Patent:

6780374, Aug 24, 2004

Filed:

Dec 8, 2000

Appl. No.:

09/733608

Inventors:

Robert A. Weaver - Whitefish MT
Gregory J. Wilson - Kalispell MT
Paul R. McHugh - Kalispell MT

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C21D 106

US Classification:

266252, 266256, 2194441, 2194681

Abstract:

An apparatus and method for processing a microelectronic workpiece at an elevated temperature. In one embodiment, the apparatus includes a workpiece support positioned to engage and support the microelectronic workpiece during operation. The apparatus can further include a heat source having a solid engaging surface positioned to engage a surface of the microelectronic workpiece with at least one of the heat source and the workpiece support being movable relative to the other between a first position with the microelectronic workpiece contacting the engaging surface of the heat source and a second position with the microelectronic workpiece spaced apart from the engaging surface. The heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to thermally process a selected material of the microelectronic workpiece when the microelectronic workpiece is engaged with the heat source. A heat sink can be positioned at least proximate to the heat source to cool both the heat source and the microelectronic workpiece.

US Patent:

6861027, Mar 1, 2005

Filed:

Aug 27, 2002

Appl. No.:

10/229384

Inventors:

Robert A. Weaver - Whitefish MT, US
Paul R. McHugh - Kalispell MT, US
Gregory J. Wilson - Kalispell MT, US

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C21D001/06

US Classification:

266256, 118725

Abstract:

An apparatus for thermally processing a microelectronic workpiece is set forth. The apparatus comprises a first assembly and a second assembly, disposed opposite one another, with an actuator disposed to provide relative movement between the first assembly and second assembly. More particularly, the actuator provides relative movement between at least a loading position in which the first assembly is in a state for loading or unloading of the microelectronic workpiece, and a thermal processing position in which the first assembly and second assembly are proximate one another and form a thermal processing chamber. A thermal transfer unit is disposed in the second assembly and has a workpiece support surface that is heated and cooled in a controlled manner. As the first assembly and second assembly are driven to the thermal processing position by the actuator, an arrangement of elements bring a surface of the microelectronic workpiece into direct physical contact with the workpiece support surface of the thermal transfer unit. In a preferred embodiment, the thermal transfer unit is comprised of a low thermal mass heater and a high thermal mass cooler disposed to controllably cool the low thermal mass heater.

US Patent:

6881309, Apr 19, 2005

Filed:

Jun 14, 2001

Appl. No.:

09/882309

Inventors:

Kyle M. Hanson - Kalispell MT, US
Robert A. Weaver - Whitefish MT, US
Jerry Simchuk - Kalispell MT, US
Raymon F. Thompson - Kalispell MT, US

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C25B009/00
C25C007/00
C25D017/00

US Classification:

204279, 204242, 2042751, 2042861, 20429701, 204DIG 7

Abstract:

In an electroplating reactor for plating a spinning wafer, a diffusion plate is supported above an anode located within a cup filled with process fluid within the reactor. The diffusion plate includes a plurality of openings which are arranged in a spiral pattern. The openings allow for an improved plating thickness distribution on the wafer surface. The openings can be elongated slots curved along the direction of the spiral path.

US Patent:

7020537, Mar 28, 2006

Filed:

May 4, 2001

Appl. No.:

09/849505

Inventors:

Gregory J. Wilson - Kalispell MT, US
Paul R. McHugh - Kalispell MT, US
Robert A. Weaver - Whitefish MT, US
Thomas L. Ritzdorf - Bigfork MT, US

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

G06F 19/00

US Classification:

700123, 700 37, 700 44, 700 45, 700121, 700262, 700263, 700119, 427 8, 427 9, 427585, 205 82, 205 83, 205 84

Abstract:

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

US Patent:

7102763, Sep 5, 2006

Filed:

Jul 9, 2001

Appl. No.:

09/902491

Inventors:

Thomas L. Ritzdorf - Kalispell MT, US
Steve L. Eudy - Kalispell MT, US
Gregory J. Wilson - Kalispell MT, US
Paul R. McHugh - Kalispell MT, US
Robert A. Weaver - Kalispell MT, US
Brian Aegerter - Kalispell MT, US
Curt Dundas - Kalispell MT, US
Steven L. Peace - Kalispell MT, US

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

G01B 11/28
H01L 21/306
B05C 11/00

US Classification:

356630, 15634515, 15634524, 118712

Abstract:

A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.