Robert A Woods

US Patent:

50285637, Jul 2, 1991

Filed:

Jan 23, 1990

Appl. No.:

7/468842

Inventors:

Zeev Feit - Brookline MA
Douglas Kostyk - Billerica MA
Robert J. Woods - Burlington MA

Assignee:

Laser Photonics, Inc. - Orlando FL

International Classification:

H01L 2120

US Classification:

437129

Abstract:

A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitaxy method.

US Patent:

49439715, Jul 24, 1990

Filed:

Feb 24, 1989

Appl. No.:

7/314977

Inventors:

Zeev Fiet - Brookline MA
Douglas Kostyk - Billerica MA
Robert J. Woods - Burlington MA

Assignee:

Spectra-Physics, Inc. - San Jose CA

International Classification:

H01S 329

US Classification:

372 46

Abstract:

A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitary method.

US Patent:

51193884, Jun 2, 1992

Filed:

Nov 21, 1990

Appl. No.:

7/616365

Inventors:

Zeev Feit - Brookline MA
Douglas Kostyk - Hudson NH
Robert J. Woods - Burlington MA

Assignee:

Laser Photonics, Inc. - Orlando FL

International Classification:

H01S 319

US Classification:

372 46

Abstract:

A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.