Robin Lynn Davis

US Patent:

20230005819, Jan 5, 2023

Filed:

Jun 15, 2022

Appl. No.:

17/841627

Inventors:

- Tempe AZ, US
Clifford Sandstrom - Richfield MN, US
Craig Bishop - Scottsdale AZ, US
Robin Davis - Vancouver WA, US

International Classification:

H01L 23/48
H01L 23/498
H01L 25/065

Abstract:

A semiconductor device may include an embedded device comprising through silicon vias (TSVs) extending from a first surface to a second surface opposite the first surface, wherein the embedded device comprises an active device, a semiconductor die comprising an active surface formed at the first surface, an integrated passive device (IPD), or a passive device. Encapsulant may be disposed over at least five sides of the embedded device. A first electrical interconnect structure may be coupled to a first end of the TSV at the first surface of the embedded device, and a second electrical interconnect structure may be coupled to a second end of the TSV at the second surface of the embedded device. A semiconductor die (e.g. a system on chip (SoC), memory device, microprocessor, graphics processor, or analog device), may be mounted over the first electrical interconnect of the TSV.