Rod C Deleon

US Patent:

6396127, May 28, 2002

Filed:

Jan 3, 2000

Appl. No.:

09/476825

Inventors:

Jorge Munoz - Cypress CA
Rod DeLeon - Palmdale CA

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 2350

US Classification:

257666, 257696, 257698, 257735, 257 72, 257724, 257728, 257401, 257139, 257329, 257334, 257341, 257691, 257675, 257796

Abstract:

A semiconductor package includes a bottom leadframe having a bottom plate portion and at least one first terminal extending from the bottom plate portion; at least one second terminal being co-planar with the first terminal; a semiconductor power MOSFET die having a bottom surface defining a drain connection and a top surface on which a first metalized region defining a source and a second metalized region defining a gate are disposed, the bottom surface being coupled to the bottom plate of the leadframe such that the first terminal is electrically connected to the drain; a copper plate coupled to and spanning a substantial part of the first metalized region defining the source connection, the copper plate including at least one chamfered edge extending upward and away from the first metalized region; and at least one beam portion being sized and shaped to couple the copper plate portion to the at least one second terminal such that it is electrically coupled to the source.