Rodney Lee Robison

age ~66

from East Berne, NY

Also known as:
  • Rodney L Robison
  • Rodney Lee Robinson
  • Rodney L Robinson
  • Rodney L Robson
  • Rodney L Roinson
  • Rodney Lrobinson
Phone and address:
220 Willsie Rd, East Berne, NY 12059
4803570968

Rodney Robison Phones & Addresses

  • 220 Willsie Rd, East Berne, NY 12059 • 4803570968
  • Steele, AL
  • Albany, NY
  • 8313 E Plata Ave, Mesa, AZ 85212 • 4803570965 • 4803570968
  • Kingston, NY
  • Spanish Fork, UT
  • El Campo, TX
  • Woodstock, NY
  • Omaha, NE
  • New Baltimore, MI
  • 8313 E Plata Ave, Mesa, AZ 85212 • 4805165459

Work

  • Company:
    Novelist
  • Position:
    Owner

Education

  • Degree:
    Graduate or professional degree

Industries

Writing And Editing

Resumes

Rodney Robison Photo 1

Owner

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Industry:
Writing And Editing
Work:
Novelist
Owner

Us Patents

  • Ionized Pvd With Sequential Deposition And Etching

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  • US Patent:
    6755945, Jun 29, 2004
  • Filed:
    May 3, 2002
  • Appl. No.:
    10/138049
  • Inventors:
    Tugrul Yasar - Scottsdale AZ
    Glyn Reynolds - Las Vegas NV
    Frank Cerio - Phoenix AZ
    Bruce Gittleman - Scottsdale AZ
    Michael Grapperhaus - Lowell MA
    Rodney Robison - Mesa AZ
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    C23C 1434
  • US Classification:
    2041923, 20419217, 20429806, 20429828
  • Abstract:
    An iPVD apparatus ( ) is programmed to deposit material ( ) into high aspect ratio submicron features ( ) on semiconductor substrates ( ) by cycling between deposition and etch modes within a vacuum chamber ( ). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms ( ) of the features, and resputters the removed deposited material onto sidewalls ( ) of the features. The substrate ( ) is cooled during deposition and etching, and particularly during etching to substantially below 0Â C. RF energy is coupled into the chamber ( ) to form a high density plasma, with substantially higher RF power coupled during deposition than during etching.
  • Plasma Processing System With Locally-Efficient Inductive Plasma Coupling

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  • US Patent:
    7273533, Sep 25, 2007
  • Filed:
    Nov 19, 2003
  • Appl. No.:
    10/717268
  • Inventors:
    Jozef Brcka - Mesa AZ, US
    Rodney Lee Robison - Mesa AZ, US
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    C23C 16/00
    C23F 1/00
    H01L 21/306
  • US Classification:
    15634548, 118723 I, 15634543
  • Abstract:
    An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, while alternating distributed conductor segments, formed of large cross-section conductor portions or diverging small conductor sections, permit magnetic fields to pass through or between the conductors and deliver only weak fields, which are aligned with opaque shield sections and couple insignificant energy to the plasma. The source provides spatial control of plasma energy distribution, which aids in control of the uniformity of plasma processing across the surface of the semiconductor being processed.
  • Enhanced Reliability Deposition Baffle For Ipvd

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  • US Patent:
    7591935, Sep 22, 2009
  • Filed:
    Dec 14, 2005
  • Appl. No.:
    11/302768
  • Inventors:
    Jozef Brcka - Loundonville NY, US
    Rodney L. Robison - East Berne NY, US
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    C23C 14/35
  • US Classification:
    20429811, 20429806, 118723 I, 118723 IR, 15634548, 15634549
  • Abstract:
    Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition baffle with slots protects the window. The deposition baffle has slots through it. The width of the slots at the window side of the baffle is different from the width of the slots at the plasma side of the baffle. Preferably, the ratio of width of the slots at the window side is preferably less than the width at the plasma side. The slots have sidewalls at the plasma side that are arc spray coated. The ratio of the baffle thickness to slot width, or the slot's aspect ratio, is less than 8:1, and preferably less than 6:1. The deposition baffle is spaced less than 1 mm from the window, and preferably less than 0. 5 mm from the window.
  • Ionized Pvd With Sequential Deposition And Etching

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  • US Patent:
    7744735, Jun 29, 2010
  • Filed:
    Mar 5, 2004
  • Appl. No.:
    10/795093
  • Inventors:
    Rodney Lee Robison - Mesa AZ, US
    Jacques Faguet - Gilbert AZ, US
    Bruce Gittleman - Scottsdale AZ, US
    Tugrul Yasar - Scottsdale AZ, US
    Frank Cerio - Phoenix AZ, US
    Jozef Brcka - Mesa AZ, US
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    C23C 14/00
    C23C 14/32
    C25B 11/00
    C25B 13/00
  • US Classification:
    20429816, 2041921, 20419213, 20419233, 20429801, 20429803, 20429817, 2042982, 20429822, 20429832, 20429837
  • Abstract:
    An iPVD apparatus () is programmed to deposit material () onto semiconductor substrates () by cycling between deposition and etch modes within a vacuum chamber (). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.
  • Selective-Redeposition Sources For Calibrating A Plasma Process

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  • US Patent:
    7749398, Jul 6, 2010
  • Filed:
    Sep 29, 2006
  • Appl. No.:
    11/536758
  • Inventors:
    Jozef Brcka - Loudonville NY, US
    Rodney L. Robison - East Berne NY, US
    Takashi Horiuchi - Kai, JP
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    H01L 21/302
  • US Classification:
    216 41, 216 59, 438 5, 438 9, 438 14, 438689, 438700, 257 48
  • Abstract:
    Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition sources that may be used for calibrating a plasma process. The selective-redeposition sources are constructed to promote the redeposition of a controllable and/or measurable amount of material during the plasma process.
  • Electrical Contacts For Integrated Circuits And Methods Of Forming Using Gas Cluster Ion Beam Processing

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  • US Patent:
    7772110, Aug 10, 2010
  • Filed:
    Sep 28, 2007
  • Appl. No.:
    11/864334
  • Inventors:
    Rodney L. Robison - East Berne NY, US
    Douglas Trickett - Altamont NY, US
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    H01L 21/4763
  • US Classification:
    438627, 438642, 438523, 257E21147
  • Abstract:
    Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.
  • Selective-Redeposition Structures For Calibrating A Plasma Process

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  • US Patent:
    7776748, Aug 17, 2010
  • Filed:
    Sep 29, 2006
  • Appl. No.:
    11/536902
  • Inventors:
    Jozef Brcka - Loudonville NY, US
    Rodney L. Robison - East Berne NY, US
    Takashi Horiuchi - Kai, JP
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    H01L 21/302
  • US Classification:
    438695, 438698, 438700, 438702, 438723, 216 37, 216 60, 216 67
  • Abstract:
    Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma process. The selective-redeposition structures receive a controllable and/or measurable amount of redeposited material during the plasma process.
  • Plasma Processing System With Locally-Efficient Inductive Plasma Coupling

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  • US Patent:
    7810449, Oct 12, 2010
  • Filed:
    Sep 24, 2007
  • Appl. No.:
    11/860044
  • Inventors:
    Jozef Brcka - Mesa AZ, US
    Rodney Lee Robison - Mesa AZ, US
  • Assignee:
    Tokyo Electron Limited - Tokyo
  • International Classification:
    C23C 16/00
    C23F 1/00
    H01L 21/306
    H05B 31/26
    B44C 1/22
    C03C 15/00
    C03C 25/68
  • US Classification:
    118723I, 15634548, 31511151, 216 68
  • Abstract:
    A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. The antenna has closely spaced conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields while alternating widely spaced conductor segments produce low strength magnetic fields.

Facebook

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Rodney Robison

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Youtube

"If tomorrow never comes" - sung by Rodney Ro...

Dedicated to his wife... me... of 25 years.

  • Duration:
    3m 38s

"Headlines" - sung by Rodney Robison

  • Duration:
    3m 16s

"I found Jesus on the jailhouse floor" sung b...

  • Duration:
    3m 19s

"Feel the nails" - sung by Rodney Robison

  • Duration:
    3m 45s

Night 927 of The Stand | The River Church

For more information about the ministry of Pastors Rodney & Adonica Ho...

  • Duration:
    3h 13m 11s

Answering Life's Biggest Questions. Rodney No...

Answering life's biggest questions is what Rodney Norman was put on ea...

  • Duration:
    30m 52s

Myspace

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Rodney Robison

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Locality:
Provo, Utah
Gender:
Male
Birthday:
1937

Classmates

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Rodney Robison

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Schools:
East Highschool Appleton WI 1995-1999
Community:
Jim Kunstman, Penny Lidbeck, Dani Greenfield
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Rodney Robison

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Schools:
Chapel Hill High School Douglasville GA 1996-2000
Community:
Cortney Evans
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Rodney Robison

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Schools:
Altus High School Altus OK 1973-1977, London Central High School High Wycombe CT 1974-1975
Community:
Kerry Boley, Joe Hayes, Barbara Garrison, Nena Snavely
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Rodney Robison, Emporia H...

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Phillipsburg High School,...

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Graduates:
Rod Robison (1977-1981),
Sheri Pool (1964-1968),
Janelle Barta (1987-1991),
Bernice Bennett (1967-1971),
Marty Woodard (1978-1982)
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Chapel Hill High School, ...

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Graduates:
Rodney Robison (1996-2000),
Teri Smith (1989-1993),
Brian Brannon (1999-2003),
Brittany Brannon (2002-2005),
Jada Williams (1999-2003)
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Blackford High School, Sa...

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Graduates:
Rodney Robison (1980-1984),
janet tellesen (1968-1972),
Alice Kelley (1982-1986),
Andy Buchanan (1979-1983)

Googleplus

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