Tugrul Yasar - Scottsdale AZ Glyn Reynolds - Las Vegas NV Frank Cerio - Phoenix AZ Bruce Gittleman - Scottsdale AZ Michael Grapperhaus - Lowell MA Rodney Robison - Mesa AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 1434
US Classification:
2041923, 20419217, 20429806, 20429828
Abstract:
An iPVD apparatus ( ) is programmed to deposit material ( ) into high aspect ratio submicron features ( ) on semiconductor substrates ( ) by cycling between deposition and etch modes within a vacuum chamber ( ). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms ( ) of the features, and resputters the removed deposited material onto sidewalls ( ) of the features. The substrate ( ) is cooled during deposition and etching, and particularly during etching to substantially below 0Â C. RF energy is coupled into the chamber ( ) to form a high density plasma, with substantially higher RF power coupled during deposition than during etching.
Plasma Processing System With Locally-Efficient Inductive Plasma Coupling
Jozef Brcka - Mesa AZ, US Rodney Lee Robison - Mesa AZ, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 16/00 C23F 1/00 H01L 21/306
US Classification:
15634548, 118723 I, 15634543
Abstract:
An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, while alternating distributed conductor segments, formed of large cross-section conductor portions or diverging small conductor sections, permit magnetic fields to pass through or between the conductors and deliver only weak fields, which are aligned with opaque shield sections and couple insignificant energy to the plasma. The source provides spatial control of plasma energy distribution, which aids in control of the uniformity of plasma processing across the surface of the semiconductor being processed.
Jozef Brcka - Loundonville NY, US Rodney L. Robison - East Berne NY, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 14/35
US Classification:
20429811, 20429806, 118723 I, 118723 IR, 15634548, 15634549
Abstract:
Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition baffle with slots protects the window. The deposition baffle has slots through it. The width of the slots at the window side of the baffle is different from the width of the slots at the plasma side of the baffle. Preferably, the ratio of width of the slots at the window side is preferably less than the width at the plasma side. The slots have sidewalls at the plasma side that are arc spray coated. The ratio of the baffle thickness to slot width, or the slot's aspect ratio, is less than 8:1, and preferably less than 6:1. The deposition baffle is spaced less than 1 mm from the window, and preferably less than 0. 5 mm from the window.
Ionized Pvd With Sequential Deposition And Etching
Rodney Lee Robison - Mesa AZ, US Jacques Faguet - Gilbert AZ, US Bruce Gittleman - Scottsdale AZ, US Tugrul Yasar - Scottsdale AZ, US Frank Cerio - Phoenix AZ, US Jozef Brcka - Mesa AZ, US
An iPVD apparatus () is programmed to deposit material () onto semiconductor substrates () by cycling between deposition and etch modes within a vacuum chamber (). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.
Selective-Redeposition Sources For Calibrating A Plasma Process
Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition sources that may be used for calibrating a plasma process. The selective-redeposition sources are constructed to promote the redeposition of a controllable and/or measurable amount of material during the plasma process.
Electrical Contacts For Integrated Circuits And Methods Of Forming Using Gas Cluster Ion Beam Processing
Rodney L. Robison - East Berne NY, US Douglas Trickett - Altamont NY, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
H01L 21/4763
US Classification:
438627, 438642, 438523, 257E21147
Abstract:
Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.
Selective-Redeposition Structures For Calibrating A Plasma Process
Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma process. The selective-redeposition structures receive a controllable and/or measurable amount of redeposited material during the plasma process.
Plasma Processing System With Locally-Efficient Inductive Plasma Coupling
A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. The antenna has closely spaced conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields while alternating widely spaced conductor segments produce low strength magnetic fields.