Roger P Anderson

US Patent:

6399510, Jun 4, 2002

Filed:

Sep 12, 2000

Appl. No.:

09/660001

Inventors:

Norma B. Riley - Pleasanton CA
Roger N. Anderson - Sunnyvale CA
Grant D. Imper - San Jose CA
Paul Comita - Menlo Park CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

438710, 156345, 216 58, 458708, 458710

Abstract:

A semiconductor substrate processing chamber provides a bi-directional process gas flow for deposition or etching processes. The bi-directional gas flow provides uniformity of deposition layer thickness or uniformity of etching without the need to rotate the substrate. Junctions are provided at opposite ends of a processing chamber. Inlet and outlet ports are provided on each junction. Inlet and outlet ports on opposite junctions cooperate to provide a gas flow in a first direction for half of the process cycle, and in a second direction for the other half of the process cycle.

US Patent:

6406543, Jun 18, 2002

Filed:

Jul 23, 1998

Appl. No.:

09/122620

Inventors:

Roger N. Anderson - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118715

Abstract:

A cover member for a semiconductor processing thermal reactor. The cover member has a central quartz window portion and an outer flange portion. The central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface. The centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section. The upper and lower flange portions having substantially equal masses.

US Patent:

6436837, Aug 20, 2002

Filed:

Oct 22, 1999

Appl. No.:

09/426218

Inventors:

Roger N. Anderson - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21302

US Classification:

438706, 438710, 438714, 118715, 118724

Abstract:

A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.

US Patent:

6455814, Sep 24, 2002

Filed:

Nov 7, 2001

Appl. No.:

10/007852

Inventors:

Arkadii V. Samoilov - Sunnyvale CA
Dale R. DuBois - Los Gatos CA
Lance A. Scudder - Santa Clara CA
Paul B. Comita - Menlo Park CA
Lori D. Washington - Union City CA
David K. Carlson - Santa Clara CA
Roger N. Anderson - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219390, 219405, 219411, 392416, 118724, 118725, 118 501

Abstract:

An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.

US Patent:

6476362, Nov 5, 2002

Filed:

Sep 12, 2000

Appl. No.:

09/660565

Inventors:

Thomas E. Deacon - Sunnyvale CA
Roger N. Anderson - Sunnyvale CA
David K. Carlson - Santa Clara CA
Paul Comita - Menlo Park CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219390, 219405, 219411, 392416, 392418, 118724, 118 501

Abstract:

A lamp array for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array. The plurality of lamps can be arranged in one or more concentric rings to form a generally circular array. Additional lamp arrays can be provided adjacent the circumference of the circular array or outermost concentric ring to provide a generally rectangular heating pattern. At least one row of lamps can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular processing chamber.

US Patent:

6500734, Dec 31, 2002

Filed:

Jun 2, 1999

Appl. No.:

09/325597

Inventors:

Roger N. Anderson - San Jose CA
Peter W. Hey - San Jose CA
David K. Carlson - Santa Clara CA
Mahalingam Venkatesan - San Jose CA
Norma Riley - Pleasanton CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2120

US Classification:

438478, 438492

Abstract:

A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.

US Patent:

6833322, Dec 21, 2004

Filed:

Oct 17, 2002

Appl. No.:

10/273830

Inventors:

Roger N. Anderson - Sunnyvale CA
Paul B. Comita - Menlo Park CA
Ann Waldhauer - La Honda CA
Norma B. Riley - Dublin CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2144

US Classification:

438680, 438681, 438756, 438757, 438758, 438769, 438787, 42725528, 361322

Abstract:

Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800Â C. and 1300Â C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.

US Patent:

7115815, Oct 3, 2006

Filed:

Dec 26, 2003

Appl. No.:

10/746757

Inventors:

Robert Kenny - Centennial CO, US
Stuart Reeves - Cheltenham, GB
Keith Ford - Cheltenham, GB
John W. Grosh - Centennial CO, US
Spring Stutzman - Sidney NE, US
Roger Anderson - Sidney NE, US
David Wiekhorst - Sidney NE, US
Fred Johnston - Sidney NE, US

Assignee:

ADC Telecommunications, Inc. - Eden Prairie MN

International Classification:

H01B 11/02

US Classification:

174113R

Abstract:

The present invention relates to cables made of twisted conductor pairs. More specifically, the present invention relates to twisted pair communication cables for high-speed data communications applications. A twisted pair including at least two conductors extends along a generally longitudinal axis, with an insulation surrounding each of the conductors. The conductors are twisted generally longitudinally along the axis. A cable includes at least two twisted pairs and a filler. At least two of the cables are positioned along generally parallel axes for at least a predefined distance. The cables are configured to efficiently and accurately propagate high-speed data signals by, among other functions, limiting at least a subset of the following: impedance deviations, signal attenuation, and alien crosstalk along the predefined distance.