Roger E Anderson

US Patent:

40489558, Sep 20, 1977

Filed:

Sep 2, 1975

Appl. No.:

5/609879

Inventors:

Roger Norman Anderson - Garland TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23C 1310

US Classification:

118 495

Abstract:

Disclosed is a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non-reactive gas required for one stage in a deposition process. Each cell is provided with an independent temperature control. A substrate is mounted on a carrier and transported through the series of individual cells so that vapor depositions or other related processes may be conducted or performed upon the substrate. Chemical vapor deposition processes such as growth of epitaxial layer, deposition of polycrystalline silicon, nitride, oxide or metals on a substrate may be performed within the reactor. The cells are isolated by viscous loss seals formed by the propinquity of restricted openings in the reactor to substrate carrier configuration.

US Patent:

44004117, Aug 23, 1983

Filed:

Jul 19, 1982

Appl. No.:

6/399568

Inventors:

Roger N. Anderson - Garland TX

Assignee:

The United States of America as represented by the Secretary of the Air
Force - Washington DC

International Classification:

B05D 512
H01L 736
B44C 122
C03C 1500

US Classification:

427 86

Abstract:

A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.