Roger F Sinta from 9 Anna Rd, Woburn, MA 01801, age 70, Phone: 7819336041

Name / Title

Company / Classification

Phones & Addresses

Roger F. Sinta
Director

ADVANCED NANOTECHNOLOGIES, INC

2 Abenaki Rd, Northborough, MA 01532
9 Anna Rd, Woburn, MA 01801

Resumes

Chemical Consultant

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Position:

Principal at J&J Chemical Consulting

Location:

Greater Boston Area

Industry:

Chemicals

Work:

J&J Chemical Consulting since Sep 1998
Principal
Adhera Technologies Jun 2004 - Mar 2009
Founder and Vice President
Shipley Company/Rohm & Haas Sep 1988 - Sep 1998
Advanced Materials Manager

Roger Sinta

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Us Patents

Methods Utilizing Antireflective Coating Compositions With Exposure Under 200 Nm
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US Patent:

6410209, Jun 25, 2002
Filed:

Sep 15, 1998
Appl. No.:

09/153575
Inventors:

Timothy G. Adams - Sudbury MA
Edward K. Pavelchek - Stow MA
Roger F. Sinta - Woburn MA
Manuel DoCanto - Stoughton MA
Robert F. Blacksmith - Hubbardston MA
Peter Trefonas, III - Medway MA
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03C 500
US Classification:

430311, 430325, 430326, 430330, 430510, 430512, 430514
Abstract:

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i. e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Antireflective Coating Compositions And Exposure Methods Under 200 Nm
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US Patent:

6602652, Aug 5, 2003
Filed:

Apr 20, 2002
Appl. No.:

10/126636
Inventors:

Timothy G. Adams - Sudbury MA
Edward K. Pavelchek - Stow MA
Roger F. Sinta - Woburn MA
Manuel DoCanto - Stoughton MA
Robert F. Blacksmith - Hubbardston MA
Peter Trefonas, III - Medway MA
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03C 500
US Classification:

430311, 430325, 430326, 430330, 430510, 430512, 430514
Abstract:

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i. e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Photoresist Compositions
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US Patent:

6645698, Nov 11, 2003
Filed:

Dec 22, 1999
Appl. No.:

09/470067
Inventors:

James W. Thackeray - Braintree MA
James F. Cameron - Boston MA
Roger F. Sinta - Woburn MA
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03F 7039
US Classification:

4302851, 4302701, 430170, 522 59
Abstract:

The invention provides photoresist compositions comprising a resin binder having acid labile blocking groups requiring an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base additive. It has found that linewidth variation is substantially reduced when using the halogenated sulfonic aced generator in a process involving a high temperature post exposure bake.

Dyed Photoresists And Methods And Articles Of Manufacture Comprising Same
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US Patent:

6706461, Mar 16, 2004
Filed:

Jun 15, 1999
Appl. No.:

09/334003
Inventors:

Roger F. Sinta - Woburn MA
Thomas M. Zydowsky - Cambridge MA
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03F 7004
US Classification:

4302701, 430326, 430926
Abstract:

The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a low molecular weight anthracene dye compounds. It has been found that these dye compounds can significantly reduce or even eliminate undesired reflections of exposure radiation, particularly deep U. V. exposure radiation such as 248 nm, as well as function as effective sensitizer compounds, enabling effective imaging at higher wavelengths, particularly I-line exposures.

Hydroxyphenyl Copolymers And Photoresists Comprising Same
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US Patent:

6770413, Aug 3, 2004
Filed:

Jan 12, 1999
Appl. No.:

09/228694
Inventors:

Hiroshi Ito - San Jose CA
Ashish Pandya - Natick MA
Roger F. Sinta - Woburn MA
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03C 173
US Classification:

4302701, 430910, 430914, 430326, 5263292
Abstract:

The present invention relates to new copolymers and use of such copolymer as a resin binder component for photoresist compositions, particularly chemically-amplified positive-acting resists. Polymers of the invention include repeat units of 1) meta-hydroxystyrene groups, 2) para-hydroxystyrene groups, and 3) photoacid-labile groups.

Low Abosorbing Resists For 157 Nm Lithography
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US Patent:

6794109, Sep 21, 2004
Filed:

Feb 23, 2001
Appl. No.:

09/791252
Inventors:

Theodore H. Fedynyshyn - Sudbury MA
Roderick R. Kunz - Acton MA
Michael Sworin - Tyngsboro MA
Roger Sinta - Woburn MA
Assignee:

Massachusetts Institute of Technology - Cambridge MA
International Classification:

G03F 7004
US Classification:

4302701, 430907, 430914
Abstract:

The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 m at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

Photoresist Compositions
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US Patent:

RE38980, Feb 14, 2006
Filed:

Mar 14, 2002
Appl. No.:

10/097886
Inventors:

James W. Thackeray - Braintree MA, US
James F. Cameron - Cambridge MA, US
Roger F. Sinta - Woburn MA, US
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03F 7/00
US Classification:

430326
Abstract:

The invention provides photoresist compositions comprising a resin binder having acid labile blocking groups requiring an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base additive. It has been found that linewidth variation is substantially reduced when using the halogenated sulfonic acid generator in a process involving a high temperature post exposure bake.

Photoresist Compositions
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US Patent:

7026093, Apr 11, 2006
Filed:

Jun 9, 2003
Appl. No.:

10/457282
Inventors:

James W. Thackeray - Braintree MA, US
James F. Cameron - Cambridge MA, US
Roger F. Sinta - Woburn MA, US
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03F 7/039
US Classification:

4302701, 430921
Abstract:

Photoresist compositions having a resin binder with an acid labile blocking group with an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base.