Ronald Baxter

US Patent:

50682059, Nov 26, 1991

Filed:

May 26, 1989

Appl. No.:

7/357505

Inventors:

Ronald D. Baxter - Furlong PA
Paul M. Kroninger - North Wales PA

Assignee:

General Signal Corporation - Stamford CT

International Classification:

H01L 2158

US Classification:

437205

Abstract:

This invention provides a method for producing header mounted sensors, such as a chemically sensitive ISFET structures, which comprises steps which include providing a plurality of electrochemically sensitive ISFET sites on a semiconductor substrate with a source region, a drain region and an electrochemically sensitive gate region on the front of said substrate with contacts for said regions on the back of the substrate. A glass carrier, such as borosilicate glass is provided for the substrate. The carrier has a hole in it to maintain uncovered the contact areas of the ISFET sites and the carrier also has leads to provide electrical access to the area of the holes from the edges of the carrier. The substrate is electrostatically bonded to the glass carrier at the periphery of each of the ISFET sites and the boundaries of the individual ISFET sites are V-groove etched to form isolated individual silicon mesas each representing an individual ISFET structure. After formation of the individual mesas a passivation coating is deposited over the front of the substrate in a manner which will not obviate the chemical sensitivity of the gate region.

US Patent:

43750567, Feb 22, 1983

Filed:

Feb 29, 1980

Appl. No.:

6/126068

Inventors:

Ronald D. Baxter - Furlong PA
Paul J. Freud - Furlong PA

Assignee:

Leeds & Northrup Company - North Wales PA

International Classification:

H01C 304

US Classification:

338 25

Abstract:

A thin film resistance thermometer is manufactured to have a predetermined temperature coefficient of resistance while minimizing the amount of metal in the film. The process involves the production of a metal film deposit on an insulating substrate such that the film deposited has a bulk coefficient substantially higher than the desired coefficient with the film being deposited to a thickness that produces the desired coefficient.

US Patent:

54078547, Apr 18, 1995

Filed:

Oct 13, 1994

Appl. No.:

8/322226

Inventors:

Ronald D. Baxter - Furlong PA
James G. Connery - Maple Glen PA
John D. Fogel - Schwenksville PA
Spencer V. Silverthorne - Perkasie PA

Assignee:

General Signal Corporation - NY

International Classification:

H01L 2170

US Classification:

437 54

Abstract:

Methods, apparatus and chip fabrication techniques are described which provide electrostatic discharge (ESD) protection to ion-sensitive field effect transistor (ISFET) based devices used to selectively measure ions in a liquid. According to one aspect of the invention, an ESD protection circuit, made up of conventional protective elements, is integrated onto the same silicon chip on which the ISFET is formed, along with an interface that is in contact with the liquid being measured and which does not open up paths for D. C. leakage currents between the ISFET and the liquid. According to a preferred embodiment of the invention, a capacitor structure is used as the interface between the protection circuit and the liquid sample. Further aspects of the invention are directed to methods per se for providing ESD protection for ISFET sensors utilizing the interface means (e. g, capacitor structure) referred to hereinabove, and processes for fabricating the novel interface on a silicon wafer.

US Patent:

45057990, Mar 19, 1985

Filed:

Jul 16, 1984

Appl. No.:

6/631507

Inventors:

Ronald D. Baxter - Furlong PA

Assignee:

General Signal Corporation - Stamford CT

International Classification:

H01L 2160
G01N 2730

US Classification:

204416

Abstract:

There is provided an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions is made through individual holes etched from the back to the source and drain regions with sidewall isolation being provided in the holes and metallization covering the surface of said sidewalls and extending to contact pads on the back of the ISFET.

US Patent:

41117174, Sep 5, 1978

Filed:

Jun 29, 1977

Appl. No.:

5/811373

Inventors:

Ronald Dale Baxter - Furlong PA

Assignee:

Leeds & Northrup Company - North Wales PA

International Classification:

H01L 3532

US Classification:

136225

Abstract:

A thermopile type radiation detector for use in radiation pyrometry having small size and high performance in which the thermopiles are formed by evaporating the thermocouple leads onto a thin substrate together with a pattern distribution of thermocouple junctions that produces an output that is more representative of the distributed radiant energy impinging on the hot junctions of the thermopile. The thermopile performance is improved also by the incorporation of relatively large reflecting areas associated with the region of the thermopile where the cold junctions are located.

US Patent:

42426596, Dec 30, 1980

Filed:

Oct 15, 1979

Appl. No.:

6/084942

Inventors:

Ronald D. Baxter - Furlong PA
Paul J. Freud - Furlong PA

Assignee:

Leeds & Northrup Company - North Wales PA

International Classification:

H01C 700
G01K 300

US Classification:

338 28

Abstract:

A resistance thermometer probe assembly is constructed by locating a header assembly in the end of a cylindrical sleeve. The header is constructed as a stack of discs. The disc exposed to the environment is of stainless steel and the disc supporting the thin film resistance thermometer chip is of ceramic. A copper disc is brazed between the ceramic and the stainless steel to accommodate the different thermal coefficients of expansion. Nail-head pins are brazed to a thick film deposit on the exposed face of the ceramic disc and the resistance thermometer chip is connected electrically between the pins.

US Patent:

45424357, Sep 17, 1985

Filed:

Mar 29, 1984

Appl. No.:

6/594588

Inventors:

Paul J. Freud - Furlong PA
Ronald D. Baxter - Furlong PA
Paul M. Kroninger - Harleysville PA

Assignee:

General Signal Corporation - Stamford CT

International Classification:

H01G 700
G01L 912

US Classification:

361283

Abstract:

A capacitive pressure transducer whose diaphragm is formed of single crystal, highly doped silicon by etching in opposite sides the recesses which define the deflecting region of the diaphragm. This deflecting region serves as one electrode of the transducer. Two support plates of silicon are anodically bonded to opposite sides of the diaphragm along its periphery using thin layers of borosilicate glass to form with the etched recesses pressure receiving cavities. These thin layers of borosilicate glass are interposed between the diaphragm and a support plate, and extend over the entire surface of the support plate facing the diaphragm to provide for electrical isolation as well as the bonding between the diaphragm and the support plates. These layers of glass are made as thin as possible consistent with the need to maintain the stray capacitance below a certain value. The transducer is mounted to a pressure receiving assembly by using a silicon stub having a passage for communicating one pressure to be measured to the transducer.

US Patent:

44697171, Sep 4, 1984

Filed:

Nov 2, 1981

Appl. No.:

6/317030

Inventors:

Ronald D. Baxter - Furlong PA
Paul J. Freud - Furlong PA

Assignee:

Leeds & Northrup Company - North Wales PA

International Classification:

B05D 512

US Classification:

427102

Abstract:

A thin film resistance thermometer is manufactured to have a predetermined temperature coefficient of resistance while minimizing the amount of metal in the film. The process involves the production of a metal film deposit on an insulating substrate such that the film deposited has a bulk coefficient substantially higher than the desired coefficient with the film being deposited to a thickness that produces the desired coefficient.