Ronald H Chand

US Patent:

20140326403, Nov 6, 2014

Filed:

May 5, 2014

Appl. No.:

14/269621

Inventors:

- Amherst NH, US
Ronald H. Chand - Paxton MA, US
Stephen G. DiPietro - Mont Vernon NH, US
Vimal K. Pujari - Northborough MA, US

International Classification:

C04B 41/00
C04B 35/571

US Classification:

156281, 1563082, 156285

Abstract:

Method and system for bonding two or more CVD SiC articles together without the use of interface materials using applied forces from about 0.0035 MPa to about 0.035 MPa. The articles are pretreated for bonding. Graphite or other fixtures are used to apply forces in a vacuum or inert gas environment. Temperatures from about 1900 C. to about 2200 C. are used to initiate a β→α transition in the SiC to create bonded CVS SiC articles.