Ronald E Hogan

US Patent:

51627230, Nov 10, 1992

Filed:

Feb 11, 1991

Appl. No.:

7/654451

Inventors:

Michael S. Marzalek - Petaluma CA
Richard C. Keiter - Healdsburg CA
John A. Wendler - Santa Rosa CA
Stephen R. Peterson - Santa Rosa CA
Ronald J. Hogan - Santa Rosa CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

G01R 2302

US Classification:

324 77B

Abstract:

A sampling signal analyzer in which the frequency of an input signal to be measured is initially ascertained, an appropriate sampling frequency is then determined, data needed to reconstruct the wave form of the input signal is acquired, and the input signal wave shape is reconstructed with a calibrated time axis and preferably displayed. The sampling signal analyzer synthesizes a sampler drive signal to enable continuous sampling of the input signal and therefore has the advantage over known data sampling signal measurement instruments that it is not triggered directly in response to the level of the input signal to be measured. Instead, sample timing is based on numerical analysis of the intermediate frequency (IF) signal produced by the sampler. The IF frequency can be an arbitrarily low frequency, which allows digitizing and digital signal processing for aligning measurement data from sweep to sweep with precision. The sampling signal analyzer operates so that all frequency components of the input signal will lie within plus or minus an IF bandwidth away from a comb tooth of a sampling frequency and will translate (i. e.

US Patent:

62429019, Jun 5, 2001

Filed:

Apr 9, 1999

Appl. No.:

9/289295

Inventors:

John C. Faick - Santa Rosa CA
Eric R. Ehlers - Santa Rosa CA
Ronald J. Hogan - Santa Rosa CA
Ajay A. Prabhu - Rohnert Park CA

Assignee:

Agilent Technologies Inc. - Palo Alto CA

International Classification:

G01R 2304
G01R 1500
G01S 302

US Classification:

324 95

Abstract:

The invention provides a true average, wide dynamic range microwave power sensor using a diode-stack-attenuator diode stack technology. The invention provides a diode stack microwave power sensor which includes an RF signals receiver having wide dynamic power ranges; a low power sensor path connected between the receiver and ground for sensing relatively low power RF input signals. The low power sensor path includes one or more stacked RF diodes in which a number of diode pairs may be coupled to ground through respective capacitors. An impedance network including attenuating resistors R1 and R2 are connected in series between the receiver and ground. A high power sensor path is connected in parallel between the attenuating resistors R1 and R2 and ground for sensing attenuated relatively high power RF input signals. The high sensor path includes a second stacked RF diode in which a second number of stacked diode pairs are coupled to ground through a respective capacitor, and in which the sensor diode operates in the square law region and senses the power levels over the wide dynamic ranges of the received RF signals.