Ronald C Pennell

US Patent:

53873165, Feb 7, 1995

Filed:

Dec 9, 1992

Appl. No.:

7/987848

Inventors:

Ronald C. Pennell - Chandler AZ
Ira E. Baskett - Tempe AZ
Lynn W. Ford - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2100

US Classification:

156647

Abstract:

A method of etching a semiconductor wafer includes providing a wafer having a portion thereof to be etched. A highly doped region is formed in the periphery of the wafer which is subsequently etched. The highly doped region of the wafer is substantially etch resistant to an etchant relative to the portion of the wafer being etched.

US Patent:

47511966, Jun 14, 1988

Filed:

Apr 1, 1985

Appl. No.:

6/718771

Inventors:

Ronald C. Pennell - Chandler AZ
Richard D. Catero - Mesa AZ
Stephen L. Lovelis - Phoenix AZ

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

H01L 2120

US Classification:

437 84

Abstract:

A high voltage thin film transistor structure and method are disclosed which make it possible to fabricate matrix displays with integrated pixel switches on PLZT substrates. A polysilicon transistor capable of withstanding more than 60 V across the source and drain and with a ratio of on to off current in excess of 10. sup. 3 is disclosed. The fabrication method disclosed is suitable for use with brittle and readily oxidizable PLZT substrates.