Ronald D Reece

US Patent:

7511287, Mar 31, 2009

Filed:

Nov 14, 2005

Appl. No.:

11/273039

Inventors:

Ronald N. Reece - Westwood MA, US
Serguei I. Kondratenko - Swampscott MA, US
Geumjoo Ra - North Andover MA, US
Louis P. Wainwright - Beverly MA, US
Gary N. Cai - Beverly MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/36

US Classification:

2504922, 25049221

Abstract:

A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.

US Patent:

20040195528, Oct 7, 2004

Filed:

Apr 1, 2003

Appl. No.:

10/404493

Inventors:

Ronald Reece - Westwood MA, US
Michael Graf - Cambridge MA, US
Thomas Parrill - North Andover MA, US
Brian Freer - Medford MA, US

International Classification:

H01J037/317
H01J037/244

US Classification:

250/492210, 250/397000

Abstract:

The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.

US Patent:

20190304820, Oct 3, 2019

Filed:

Mar 28, 2019

Appl. No.:

16/367948

Inventors:

- Beverly MA, US
Ronald N. Reece - Westwood MA, US
Petros Miltiades Kopalidis - Swampscott MA, US

International Classification:

H01L 21/67
H01L 21/683
H01L 21/687
H01J 37/317
H01J 37/20

Abstract:

A thermal chuck selectively retains a workpiece on a clamping surface. The thermal chuck has one or more heaters to selectively heat the clamping surface and the workpiece. A thermal monitoring device determines a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, defining one or more measured temperatures. A controller selectively energizes the one or more heaters based on the one or more measured temperatures. The thermal monitoring device may be one or more of a thermocouple or RTD in selective contact with the surface of the workpiece and an emissivity sensor or pyrometer not in contact with the surface. The thermal chuck can be part of an ion implantation system configured to implant ions into the workpiece. The controller can be further configured to control the heaters based on the measured temperatures.

Address:

5480 Ponderosa Dr, Fairfield, OH 45014

Phone:

5136427390

VIN:

1G1ZH57B984248748

Make:

CHEVROLET

Model:

MALIBU

Year:

2008

Address:

13 Hurst Rd, Painesville, OH 44077

Phone:

4403549771

VIN:

5J6RE48367L002000

Make:

HONDA

Model:

CR-V

Year:

2007