Arne W. Ballantine - Cold Spring NY Jeffrey D. Gilbert - South Burlington VT Robert G. Miller - Essex Junction VT Amy L. Myrick - Waterbury Ctr. CT Ronald A. Warren - Milton VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 31058
US Classification:
257467, 257 43, 257 48, 257751
Abstract:
A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600Â C. , wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600Â C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafers surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper.
Arne W. Ballantine - Cold Spring NY Jeffrey D. Gilbert - South Burlington VT Robert G. Miller - Essex Junction VT Amy L. Myrick - Waterbury Ctr. VT Ronald A. Warren - Milton VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2166
US Classification:
438 18, 438 54, 438104, 438653
Abstract:
A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600Â C. , wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600Â C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafers surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper.
Apparatus For Uniform Cleaning Of Wafers Using Megasonic Energy
David Stanasolovich - Montgomery NY William A. Syverson - Colchester VT Ronald A. Warren - Troy NY
Assignee:
Inernational Business Machines Corporation - Armonk NY
International Classification:
B08B 310
US Classification:
134155
Abstract:
Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.
Method For Uniform Cleaning Of Wafers Using Megasonic Energy
David Stanasolovich - Montgomery NY William A. Syverson - Colchester VT Ronald A. Warren - Troy NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B08B 312
US Classification:
134 1
Abstract:
Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.
Apparatus For Uniform Cleaning Of Wafers Using Megasonic Energy
David Stanasolovich - Montgomery NY William A. Syverson - Colchester VT Ronald A. Warren - Troy NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B08B 310
US Classification:
134184
Abstract:
Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.
James Ronald Warren (born 1925) is a Seattle historian instrumental in rediscovering the source of the Seattle fire of 1889. He also fought as a member of ...
Prosports Orthopedics IncPro Sports Orthopedics 20 Guest St STE 225, Brighton, MA 02135 6177388642 (phone), 6172024172 (fax)
Education:
Medical School Loyola University Chicago Stritch School of Medicine Graduated: 1972
Procedures:
Carpal Tunnel Decompression Craniotomy Spinal Cord Surgery Spinal Fusion Spinal Surgery
Conditions:
Intervertebral Disc Degeneration
Languages:
English Spanish
Description:
Dr. Warren graduated from the Loyola University Chicago Stritch School of Medicine in 1972. He works in Brighton, MA and specializes in Orthopaedic Surgery and Orthopaedic Surgery Of Spine. Dr. Warren is affiliated with Beth Israel Deaconess Medical Center West Campus, Mount Auburn Hospital and New England Baptist Hospital.
Ronald M Warren MD 2000 Academy Dr STE 200, Mount Laurel, NJ 08054 8567270030 (phone), 8567279701 (fax)
Education:
Medical School Rosalind Franklin University/ Chicago Medical School Graduated: 1984
Languages:
English
Description:
Dr. Warren graduated from the Rosalind Franklin University/ Chicago Medical School in 1984. He works in Mount Laurel, NJ and specializes in Plastic Surgery. Dr. Warren is affiliated with Our Lady Of Lourdes Medical Center.
Ear Nose & Throat Surgery Associates 725 Concord Ave STE 3200, Cambridge, MA 02138 6174999933 (phone), 6174999935 (fax)
Languages:
English Portuguese
Description:
Dr. Warren works in Cambridge, MA and specializes in Surgery , Neurological. Dr. Warren is affiliated with Mount Auburn Hospital and St Elizabeths Medical Center.
Plastic Surgery Plastic and Reconstructive Surgery
Education:
Rosalind Franklin University (1984) Chicago Med SchR Franklin U M Sci (1988) *Surgery Med Coll Wi Affil Hosps (1987) *Plastic Surgery Providence Hosp Med Ctrs (1990) *Plastic Surgery
SE MI Ronnie Warren Out -- wedding and event photographer, also dabble in photography for real estate, fine art, models, portraiture, senior high school, etc. etc. etc. Also, terrific with the image ...
Hardwick Elementary School Lubbock TX 1972-1976, South Elementary School Levelland TX 1976-1979, Levelland Middle School Levelland TX 1979-1980, Levelland Junior High School Levelland TX 1980-1982
Community:
David Ervin, Tammy Stafford, Amy Bowles, Felicia Schultz, Doug Thompson