Rowena S Schmidt

US Patent:

8349195, Jan 8, 2013

Filed:

Jun 27, 2008

Appl. No.:

12/163865

Inventors:

Weimin Si - Pleasanton CA, US
Liubo Hong - San Jose CA, US
Honglin Zhu - Fremont CA, US
Winnie Yu - San Jose CA, US
Rowena Schmidt - Gilroy CA, US

Assignee:

Western Digital (Fremont), LLC - Fremont CA

International Classification:

B44C 1/22
G11B 5/127

US Classification:

216 22, 216 11, 216 41, 216 46, 216 47, 216 58, 216 67, 216 88, 427127, 427128, 360110, 360122, 360126, 360313, 360317, 360319, 360320, 360324, 360325, 360326, 2960313, 2960315, 2960318

Abstract:

A method and system provide a magnetoresistive structure from a magnetoresistive stack that includes a plurality of layers. The method and system include providing a mask that exposes a portion of the magnetoresistive stack. The mask has at least one side, a top, and a base at least as wide as the top. The method and system also include removing the portion of the magnetoresistive stack to define the magnetoresistive structure. The method and system further include providing an insulating layer. A portion of the insulating layer resides on the at least one side of the mask. The method and system further include removing the portion of the insulating layer on the at least one side of the mask and removing the mask.

US Patent:

8163185, Apr 24, 2012

Filed:

Mar 31, 2008

Appl. No.:

12/059903

Inventors:

Hai Sun - Milpitas CA, US
Liubo Hong - San Jose CA, US
Rowena Schmidt - Gilroy CA, US
Lijie Zhao - Pleasanton CA, US
Winnie Yu - San Jose CA, US
Hongping Yuan - Fremont CA, US

Assignee:

Western Digital (Fremont), LLC - Fremont CA

International Classification:

B44C 1/22

US Classification:

216 22, 216 40, 216 57, 216 66, 2960307

Abstract:

A method of lifting off photoresist beneath an overlayer includes providing a structure including photoresist and depositing an overlayer impenetrable to a liftoff solution over the photoresist and a field region around the structure. The method also includes forming a mask over the structure and ion milling to remove the overlayer in the field region not covered by the mask. The method then includes lifting off the photoresist using the liftoff solution.