Sameer A Singhal

US Patent:

7352016, Apr 1, 2008

Filed:

Nov 13, 2006

Appl. No.:

11/598551

Inventors:

Walter H. Nagy - Raleigh NC, US
Ricardo M. Borges - Morrisville NC, US
Jeffrey D. Brown - Garner NC, US
Apurva D. Chaudhari - Raleigh NC, US
James W. Cook - Raleigh NC, US
Allen W. Hanson - Cary NC, US
Jerry Wayne Johnson - Raleigh NC, US
Kevin J. Linthicum - Angier NC, US
Edwin Lanier Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John Claassen Roberts - Hillsborough NC, US
Sameer Singhal - Apex NC, US
Robert Joseph Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE

Assignee:

Nitronex Corporation - Durham NC

International Classification:

H01L 31/00

US Classification:

257192, 257194

Abstract:

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

US Patent:

7569871, Aug 4, 2009

Filed:

Mar 31, 2008

Appl. No.:

12/059182

Inventors:

Walter H. Nagy - Raleigh NC, US
Jerry Wayne Johnson - Raleigh NC, US
Edwin Lanier Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John Claassen Roberts - Hillsborough NC, US
Sameer Singhal - Raleigh NC, US
Robert Joseph Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE
Ricardo M. Borges - Morrisville NC, US
Jeffrey D. Brown - Charlotte NC, US
Apurva D. Chaudhari - Raleigh NC, US
James W. Cook - Raleigh NC, US
Allen W. Hanson - Cary NC, US
Kevin J. Linthicum - Cary NC, US

Assignee:

Nitronex Corporation - Durham NC

International Classification:

H01L 31/072

US Classification:

257192, 257194

Abstract:

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

US Patent:

8026596, Sep 27, 2011

Filed:

Aug 15, 2007

Appl. No.:

11/839030

Inventors:

Sameer Singhal - Raleigh NC, US
Andrew Edwards - Cary NC, US
Chul H. Park - Cary NC, US
Quinn Martin - Morrisville NC, US
Isik C. Kizilyalli - Raleigh NC, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 23/373
H01L 21/58

US Classification:

257712, 257720, 257E23109, 438122

Abstract:

Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

US Patent:

8158409, Apr 17, 2012

Filed:

Jan 11, 2010

Appl. No.:

12/685487

Inventors:

Jianjun Wei - Madison AL, US
Sameer Singhal - Huntsville AL, US
David Hennessey Waldeck - Pittsburgh PA, US
Matthew Joseph Kofke - Pittsburgh PA, US

Assignee:

CFD Research Corporation - Huntsville AL
University of Pittsburgh - Pittsburgh PA

International Classification:

C12M 1/34

US Classification:

4352871, 385 12, 385129, 385130, 422 8211, 4352872, 4352884, 4352887, 435808, 436164, 436524, 436525, 436805

Abstract:

A microfluidically-controlled transmission mode nanoscal surface plasmonics sensor device comprises one or more arrays of aligned nanochannels in fluid communication with inflowing and outflowing fluid handling manifolds that control the flow of fluid through the array(s). Fluid comprising a sample for analysis is moved from an inlet manifold, through the nanochannel array, and out through an exit manifold. The fluid may also contain a reagent used to modify the interior surfaces of the nanochannels, and/or a reagent required for the detection of an analyte.

US Patent:

7994540, Aug 9, 2011

Filed:

Jul 24, 2009

Appl. No.:

12/508871

Inventors:

Walter H. Nagy - Raleigh NC, US
Ricardo M. Borges - Morrisville NC, US
Jeffrey D. Brown - Charlotte NC, US
Apurva D. Chaudhari - Raleigh NC, US
Allen W. Hanson - Cary NC, US
Jerry W. Johnson - Raleigh NC, US
Kevin J. Linthicum - Cary NC, US
Edwin L. Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John C. Roberts - Hillsborough NC, US
Sameer Singhal - Apex NC, US
Robert J. Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 31/0328

US Classification:

257192, 330277

Abstract:

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

US Patent:

20050145851, Jul 7, 2005

Filed:

Jun 28, 2004

Appl. No.:

10/879695

Inventors:

Jerry Johnson - Raleigh NC, US
Ricardo Borges - Morrisville NC, US
Jeffrey Brown - Garner NC, US
James Cook - Raleigh NC, US
Allen Hanson - Cary NC, US
Edwin Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John Roberts - Hillsborough NC, US
Sameer Singhal - Apex NC, US
Robert Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE

Assignee:

Nitronex Corporation - Raleigh NC

International Classification:

H01L029/15

US Classification:

257076000

Abstract:

Gallium nitride material structures, including devices, and methods associated with the same are provided. In some embodiments, the structures include one or more isolation regions which electrically isolate adjacent devices. One aspect of the invention is the discovery that the isolation regions also can significantly reduce the leakage current of devices (e.g., transistors) made from the structures, particularly devices that also include a passivating layer formed on a surface of the gallium nitride material. Lower leakage currents can result in increased power densities and operating voltages, amongst other advantages.

US Patent:

20050167775, Aug 4, 2005

Filed:

Aug 5, 2004

Appl. No.:

10/913297

Inventors:

Walter Nagy - Raleigh NC, US
Ricardo Borges - Morrisville NC, US
Jeffrey Brown - Charlotte NC, US
Apurva Chaudhari - Raleigh NC, US
James Cook - Raleigh NC, US
Allen Hanson - Cary NC, US
Jerry Johnson - Raleigh NC, US
Kevin Linthicum - Cary NC, US
Edwin Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John Roberts - Hillsborough NC, US
Sameer Singhal - Apex NC, US
Robert Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE

Assignee:

Nitronex Corporation - Raleigh NC

International Classification:

H01L029/15

US Classification:

257500000

Abstract:

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

US Patent:

20070272957, Nov 29, 2007

Filed:

Nov 30, 2006

Appl. No.:

11/607129

Inventors:

Jerry Johnson - Raleigh NC, US
Sameer Singhal - Apex NC, US
Allen Hanson - Cary NC, US
Robert Therrien - Apex NC, US

Assignee:

Nitronex Corporation - Raleigh NC

International Classification:

H01L 29/78
H01L 21/336

US Classification:

257289000, 438285000, 257E29255, 257E21401

Abstract:

Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.